Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering

J. W. Ma, W. J. Lee, J. M. Bae, K. S. Jeong, S. H. Oh, Jae Hoon Kim, S. H. Kim, J. H. Seo, J. P. Ahn, H. Kim, Mann-Ho Cho

Research output: Contribution to journalArticle

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Abstract

Changes in the carrier mobility of tensile strained Si and SiGe nanowires (NWs) were examined using an electrical push-to-pull device (E-PTP, Hysitron). The changes were found to be closely related to the chemical structure at the surface, likely defect states. As tensile strain is increased, the resistivity of SiGe NWs deceases in a linear manner. However, the corresponding values for Si NWs increased with increasing tensile strain, which is closely related to broken bonds induced by defects at the NW surface. Broken bonds at the surface, which communicate with the defect state of Si are critically altered when Ge is incorporated in Si NW. In addition, the number of defects could be significantly decreased in Si NWs by incorporating a surface passivated Al2O3 layer, which removes broken bonds, resulting in a proportional decrease in the resistivity of Si NWs with increasing strain. Moreover, the presence of a passivation layer dramatically increases the extent of fracture strain in NWs, and a significant enhancement in mobility of about 2.6 times was observed for a tensile strain of 5.7%.

Original languageEnglish
Pages (from-to)7204-7210
Number of pages7
JournalNano Letters
Volume15
Issue number11
DOIs
Publication statusPublished - 2015 Nov 11

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Carrier mobility
Surface defects
surface defects
carrier mobility
Nanowires
nanowires
engineering
augmentation
Tensile strain
Defects
defects
electrical resistivity
Passivation
passivity

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Ma, J. W. ; Lee, W. J. ; Bae, J. M. ; Jeong, K. S. ; Oh, S. H. ; Kim, Jae Hoon ; Kim, S. H. ; Seo, J. H. ; Ahn, J. P. ; Kim, H. ; Cho, Mann-Ho. / Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering. In: Nano Letters. 2015 ; Vol. 15, No. 11. pp. 7204-7210.
@article{908c7750308d4cdeaa88bce4fd177e5f,
title = "Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering",
abstract = "Changes in the carrier mobility of tensile strained Si and SiGe nanowires (NWs) were examined using an electrical push-to-pull device (E-PTP, Hysitron). The changes were found to be closely related to the chemical structure at the surface, likely defect states. As tensile strain is increased, the resistivity of SiGe NWs deceases in a linear manner. However, the corresponding values for Si NWs increased with increasing tensile strain, which is closely related to broken bonds induced by defects at the NW surface. Broken bonds at the surface, which communicate with the defect state of Si are critically altered when Ge is incorporated in Si NW. In addition, the number of defects could be significantly decreased in Si NWs by incorporating a surface passivated Al2O3 layer, which removes broken bonds, resulting in a proportional decrease in the resistivity of Si NWs with increasing strain. Moreover, the presence of a passivation layer dramatically increases the extent of fracture strain in NWs, and a significant enhancement in mobility of about 2.6 times was observed for a tensile strain of 5.7{\%}.",
author = "Ma, {J. W.} and Lee, {W. J.} and Bae, {J. M.} and Jeong, {K. S.} and Oh, {S. H.} and Kim, {Jae Hoon} and Kim, {S. H.} and Seo, {J. H.} and Ahn, {J. P.} and H. Kim and Mann-Ho Cho",
year = "2015",
month = "11",
day = "11",
doi = "10.1021/acs.nanolett.5b01634",
language = "English",
volume = "15",
pages = "7204--7210",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "11",

}

Ma, JW, Lee, WJ, Bae, JM, Jeong, KS, Oh, SH, Kim, JH, Kim, SH, Seo, JH, Ahn, JP, Kim, H & Cho, M-H 2015, 'Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering', Nano Letters, vol. 15, no. 11, pp. 7204-7210. https://doi.org/10.1021/acs.nanolett.5b01634

Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering. / Ma, J. W.; Lee, W. J.; Bae, J. M.; Jeong, K. S.; Oh, S. H.; Kim, Jae Hoon; Kim, S. H.; Seo, J. H.; Ahn, J. P.; Kim, H.; Cho, Mann-Ho.

In: Nano Letters, Vol. 15, No. 11, 11.11.2015, p. 7204-7210.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering

AU - Ma, J. W.

AU - Lee, W. J.

AU - Bae, J. M.

AU - Jeong, K. S.

AU - Oh, S. H.

AU - Kim, Jae Hoon

AU - Kim, S. H.

AU - Seo, J. H.

AU - Ahn, J. P.

AU - Kim, H.

AU - Cho, Mann-Ho

PY - 2015/11/11

Y1 - 2015/11/11

N2 - Changes in the carrier mobility of tensile strained Si and SiGe nanowires (NWs) were examined using an electrical push-to-pull device (E-PTP, Hysitron). The changes were found to be closely related to the chemical structure at the surface, likely defect states. As tensile strain is increased, the resistivity of SiGe NWs deceases in a linear manner. However, the corresponding values for Si NWs increased with increasing tensile strain, which is closely related to broken bonds induced by defects at the NW surface. Broken bonds at the surface, which communicate with the defect state of Si are critically altered when Ge is incorporated in Si NW. In addition, the number of defects could be significantly decreased in Si NWs by incorporating a surface passivated Al2O3 layer, which removes broken bonds, resulting in a proportional decrease in the resistivity of Si NWs with increasing strain. Moreover, the presence of a passivation layer dramatically increases the extent of fracture strain in NWs, and a significant enhancement in mobility of about 2.6 times was observed for a tensile strain of 5.7%.

AB - Changes in the carrier mobility of tensile strained Si and SiGe nanowires (NWs) were examined using an electrical push-to-pull device (E-PTP, Hysitron). The changes were found to be closely related to the chemical structure at the surface, likely defect states. As tensile strain is increased, the resistivity of SiGe NWs deceases in a linear manner. However, the corresponding values for Si NWs increased with increasing tensile strain, which is closely related to broken bonds induced by defects at the NW surface. Broken bonds at the surface, which communicate with the defect state of Si are critically altered when Ge is incorporated in Si NW. In addition, the number of defects could be significantly decreased in Si NWs by incorporating a surface passivated Al2O3 layer, which removes broken bonds, resulting in a proportional decrease in the resistivity of Si NWs with increasing strain. Moreover, the presence of a passivation layer dramatically increases the extent of fracture strain in NWs, and a significant enhancement in mobility of about 2.6 times was observed for a tensile strain of 5.7%.

UR - http://www.scopus.com/inward/record.url?scp=84947080308&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84947080308&partnerID=8YFLogxK

U2 - 10.1021/acs.nanolett.5b01634

DO - 10.1021/acs.nanolett.5b01634

M3 - Article

VL - 15

SP - 7204

EP - 7210

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 11

ER -