Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering

J. W. Ma, W. J. Lee, J. M. Bae, K. S. Jeong, S. H. Oh, Jae Hoon Kim, S. H. Kim, J. H. Seo, J. P. Ahn, H. Kim, Mann-Ho Cho

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Changes in the carrier mobility of tensile strained Si and SiGe nanowires (NWs) were examined using an electrical push-to-pull device (E-PTP, Hysitron). The changes were found to be closely related to the chemical structure at the surface, likely defect states. As tensile strain is increased, the resistivity of SiGe NWs deceases in a linear manner. However, the corresponding values for Si NWs increased with increasing tensile strain, which is closely related to broken bonds induced by defects at the NW surface. Broken bonds at the surface, which communicate with the defect state of Si are critically altered when Ge is incorporated in Si NW. In addition, the number of defects could be significantly decreased in Si NWs by incorporating a surface passivated Al2O3 layer, which removes broken bonds, resulting in a proportional decrease in the resistivity of Si NWs with increasing strain. Moreover, the presence of a passivation layer dramatically increases the extent of fracture strain in NWs, and a significant enhancement in mobility of about 2.6 times was observed for a tensile strain of 5.7%.

Original languageEnglish
Pages (from-to)7204-7210
Number of pages7
JournalNano Letters
Issue number11
Publication statusPublished - 2015 Nov 11


All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Ma, J. W., Lee, W. J., Bae, J. M., Jeong, K. S., Oh, S. H., Kim, J. H., Kim, S. H., Seo, J. H., Ahn, J. P., Kim, H., & Cho, M-H. (2015). Carrier Mobility Enhancement of Tensile Strained Si and SiGe Nanowires via Surface Defect Engineering. Nano Letters, 15(11), 7204-7210.