Carrier-suppressing effect of Mg in solution-processed Zn-Sn-O thin-film transistors

Hyun Soo Lim; You Seung Rim; Dong Lim Kim; Woong Hee Jeong; Hyun Jae Kim

doi:10.1149/2.012203esl

Carrier-suppressing effect of Mg in solution-processed Zn-Sn-O thin-film transistors

Hyun Soo Lim, You Seung Rim, Dong Lim Kim, Woong Hee Jeong, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article

16 Citations (Scopus)

Abstract

We investigated the effect of Mg addition on solution-processed Zn-Sn-O (ZTO) thin-film transistors (TFTs). Because Mg affects the optical bandgap and the metal-oxygen bond in ZTO films, the carrier concentration of Mg-Zn-Sn-O (MZTO) films was suppressed by Mg. As the molar ratio of Mg increased in the MZTO TFTs annealed at 500°C, the onoff ratio increased, and the subthreshold gate swing (S.S) decreased considerably. As a result, the MZTO TFT showed a saturation mobility of 1.00 cm ²V s, an S.S of 0.92 Vdecade, a threshold voltage (V _th) of 6.60 V, and an onoff ratio of 3.15 ×10 ⁶.

Original language	English
Pages (from-to)	H78-H80
Journal	Electrochemical and Solid-State Letters
Volume	15
Issue number	3
DOIs	https://doi.org/10.1149/2.012203esl
Publication status	Published - 2012 Jan 23

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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Lim, H. S., Rim, Y. S., Kim, D. L., Jeong, W. H., & Kim, H. J. (2012). Carrier-suppressing effect of Mg in solution-processed Zn-Sn-O thin-film transistors. Electrochemical and Solid-State Letters, 15(3), H78-H80. https://doi.org/10.1149/2.012203esl

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abstract = "We investigated the effect of Mg addition on solution-processed Zn-Sn-O (ZTO) thin-film transistors (TFTs). Because Mg affects the optical bandgap and the metal-oxygen bond in ZTO films, the carrier concentration of Mg-Zn-Sn-O (MZTO) films was suppressed by Mg. As the molar ratio of Mg increased in the MZTO TFTs annealed at 500°C, the onoff ratio increased, and the subthreshold gate swing (S.S) decreased considerably. As a result, the MZTO TFT showed a saturation mobility of 1.00 cm 2V s, an S.S of 0.92 Vdecade, a threshold voltage (V th) of 6.60 V, and an onoff ratio of 3.15 ×10 6.",

author = "Lim, {Hyun Soo} and Rim, {You Seung} and Kim, {Dong Lim} and Jeong, {Woong Hee} and Kim, {Hyun Jae}",

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AU - Kim, Hyun Jae

PY - 2012/1/23

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