Carrier-suppressing effect of scandium in InZnO systems for solution-processed thin film transistors

Yuri Choi; Gun Hee Kim; Woong Hee Jeong; Jung Hyeon Bae; Hyun Jae Kim; Jae Min Hong; Jae Woong Yu

doi:10.1063/1.3503964

Carrier-suppressing effect of scandium in InZnO systems for solution-processed thin film transistors

Yuri Choi, Gun Hee Kim, Woong Hee Jeong, Jung Hyeon Bae, Hyun Jae Kim, Jae Min Hong, Jae Woong Yu

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

The carrier-suppressing effect of Sc in InZnO systems was studied using thin-film transistors (TFTs) with a sol-gel processed active channel. As the amount of Sc content increased, the off current decreased, and the threshold voltage shifted to a positive bias region. The Sc effectively controlled the oxygen vacancies and supplied free electrons. X-ray photoelectron spectroscopy (XPS) verified that the vacancy-related oxygen 1s peak decreased with increasing Sc content. The TFT performance with 14% Sc showed that a field-effect mobility and on-off ratio were 2.06 cm² /V s and 8.02× 10⁶, respectively.

Original language	English
Article number	162102
Journal	Applied Physics Letters
Volume	97
Issue number	16
DOIs	https://doi.org/10.1063/1.3503964
Publication status	Published - 2010 Oct 18

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (Grant No. R0A-2007-000-10044-0).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3503964

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title = "Carrier-suppressing effect of scandium in InZnO systems for solution-processed thin film transistors",

abstract = "The carrier-suppressing effect of Sc in InZnO systems was studied using thin-film transistors (TFTs) with a sol-gel processed active channel. As the amount of Sc content increased, the off current decreased, and the threshold voltage shifted to a positive bias region. The Sc effectively controlled the oxygen vacancies and supplied free electrons. X-ray photoelectron spectroscopy (XPS) verified that the vacancy-related oxygen 1s peak decreased with increasing Sc content. The TFT performance with 14% Sc showed that a field-effect mobility and on-off ratio were 2.06 cm2 /V s and 8.02× 106, respectively.",

author = "Yuri Choi and Kim, {Gun Hee} and Jeong, {Woong Hee} and Bae, {Jung Hyeon} and Kim, {Hyun Jae} and Hong, {Jae Min} and Yu, {Jae Woong}",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (Grant No. R0A-2007-000-10044-0).",

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doi = "10.1063/1.3503964",

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AU - Choi, Yuri

AU - Kim, Gun Hee

AU - Jeong, Woong Hee

AU - Bae, Jung Hyeon

AU - Kim, Hyun Jae

AU - Hong, Jae Min

AU - Yu, Jae Woong

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (Grant No. R0A-2007-000-10044-0).

PY - 2010/10/18

Y1 - 2010/10/18

N2 - The carrier-suppressing effect of Sc in InZnO systems was studied using thin-film transistors (TFTs) with a sol-gel processed active channel. As the amount of Sc content increased, the off current decreased, and the threshold voltage shifted to a positive bias region. The Sc effectively controlled the oxygen vacancies and supplied free electrons. X-ray photoelectron spectroscopy (XPS) verified that the vacancy-related oxygen 1s peak decreased with increasing Sc content. The TFT performance with 14% Sc showed that a field-effect mobility and on-off ratio were 2.06 cm2 /V s and 8.02× 106, respectively.

AB - The carrier-suppressing effect of Sc in InZnO systems was studied using thin-film transistors (TFTs) with a sol-gel processed active channel. As the amount of Sc content increased, the off current decreased, and the threshold voltage shifted to a positive bias region. The Sc effectively controlled the oxygen vacancies and supplied free electrons. X-ray photoelectron spectroscopy (XPS) verified that the vacancy-related oxygen 1s peak decreased with increasing Sc content. The TFT performance with 14% Sc showed that a field-effect mobility and on-off ratio were 2.06 cm2 /V s and 8.02× 106, respectively.

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Carrier-suppressing effect of scandium in InZnO systems for solution-processed thin film transistors

Abstract

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