The carrier-suppressing effect of Sc in InZnO systems was studied using thin-film transistors (TFTs) with a sol-gel processed active channel. As the amount of Sc content increased, the off current decreased, and the threshold voltage shifted to a positive bias region. The Sc effectively controlled the oxygen vacancies and supplied free electrons. X-ray photoelectron spectroscopy (XPS) verified that the vacancy-related oxygen 1s peak decreased with increasing Sc content. The TFT performance with 14% Sc showed that a field-effect mobility and on-off ratio were 2.06 cm2 /V s and 8.02× 106, respectively.
|Journal||Applied Physics Letters|
|Publication status||Published - 2010 Oct 18|
Bibliographical noteFunding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (Grant No. R0A-2007-000-10044-0).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)