Over the past few years, two-dimensional materials have gained immense attention for next-generation electric sensing devices because of their unique properties. Here, we report the carrier transport properties of MoS2 Schottky diodes under ambient as well as gas exposure conditions. MoS2 field-effect transistors (FETs) were fabricated using Pt and Al electrodes. The work function of Pt is higher than that of MoS2, while that of Al is lower than that of MoS2. The MoS2 device with Al contacts showed much higher current than that with Pt contacts because of its lower Schottky barrier height (SBH). The electrical characteristics and gas responses of the MoS2 Schottky diodes with Al and Pt contacts were measured electrically and were simulated by density functional theory calculations. The theoretically calculated SBH of the diode (under gas absorption) showed that NOx molecules had strong interaction with the diode and induced a negative charge transfer. However, an opposite trend was observed in the case of NH3 molecules. We also investigated the effect of metal contacts on the gas sensing performance of MoS2 FETs both experimentally and theoretically.
Bibliographical noteFunding Information:
This research was supported by Nano·Material Technology Development Program (NRF-2017M3A7B4041987) through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning, by the Korea Ministry of Environment as “Global Top Project (2016002130005)”, and the Development of diagnostic system for mild cognitive impairment due to Alzheimer’s disease (2015-11-1684).
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics