Carrier Transport Properties of MoS2 Asymmetric Gas Sensor Under Charge Transfer-Based Barrier Modulation

Sun Jun Kim, Jae Young Park, Sanghyuk H. Yoo, Palanivel Umadevi, Hyunpyo Lee, Jinsoo Cho, Keon Wook Kang, Seong Chan Jun

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Over the past few years, two-dimensional materials have gained immense attention for next-generation electric sensing devices because of their unique properties. Here, we report the carrier transport properties of MoS2 Schottky diodes under ambient as well as gas exposure conditions. MoS2 field-effect transistors (FETs) were fabricated using Pt and Al electrodes. The work function of Pt is higher than that of MoS2, while that of Al is lower than that of MoS2. The MoS2 device with Al contacts showed much higher current than that with Pt contacts because of its lower Schottky barrier height (SBH). The electrical characteristics and gas responses of the MoS2 Schottky diodes with Al and Pt contacts were measured electrically and were simulated by density functional theory calculations. The theoretically calculated SBH of the diode (under gas absorption) showed that NOx molecules had strong interaction with the diode and induced a negative charge transfer. However, an opposite trend was observed in the case of NH3 molecules. We also investigated the effect of metal contacts on the gas sensing performance of MoS2 FETs both experimentally and theoretically.

Original languageEnglish
Article number265
JournalNanoscale Research Letters
Volume13
DOIs
Publication statusPublished - 2018 Jan 1

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Carrier transport
Chemical sensors
Transport properties
Charge transfer
Diodes
transport properties
charge transfer
Modulation
modulation
Electric sensing devices
Gases
sensors
Field effect transistors
Schottky diodes
gases
field effect transistors
diodes
Gas absorption
Molecules
Contacts (fluid mechanics)

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Kim, Sun Jun ; Park, Jae Young ; Yoo, Sanghyuk H. ; Umadevi, Palanivel ; Lee, Hyunpyo ; Cho, Jinsoo ; Kang, Keon Wook ; Jun, Seong Chan. / Carrier Transport Properties of MoS2 Asymmetric Gas Sensor Under Charge Transfer-Based Barrier Modulation. In: Nanoscale Research Letters. 2018 ; Vol. 13.
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Carrier Transport Properties of MoS2 Asymmetric Gas Sensor Under Charge Transfer-Based Barrier Modulation. / Kim, Sun Jun; Park, Jae Young; Yoo, Sanghyuk H.; Umadevi, Palanivel; Lee, Hyunpyo; Cho, Jinsoo; Kang, Keon Wook; Jun, Seong Chan.

In: Nanoscale Research Letters, Vol. 13, 265, 01.01.2018.

Research output: Contribution to journalArticle

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