Center-of-mass quantization of excitons and Fabry-Perot modes of the polariton in ZnSe epilayers

E. D. Sim, J. H. Song, S. K. Chang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Reflectance properties of ZnSe epilayers grown on GaAs substrates are studied at 80 K. Oscillation features are observed in the region of exciton resonance which are significantly different depending on the epilayer thickness L. For optically thin layers with thickness in the range of several tens of nanometer, reflectance oscillations appear above the light-hole (lh) exciton, while for optically thick layers with thickness in the range of a micrometer, reflectance oscillations appear between 1s and 2s excitons. These oscillations are interpreted as the quantized levels of the exciton center-of-mass motion in the lower branch of the polariton for optically thin layers and Fabry-Perot modes in the upper branch of the polariton for optically thick layers, respectively. The reflectance data are analyzed in the frame work of a dielectric function with a polariton dispersion.

Original languageEnglish
Pages (from-to)513-517
Number of pages5
JournalSolid State Communications
Volume121
Issue number9-10
DOIs
Publication statusPublished - 2002 Mar 7

Fingerprint

Epilayers
Excitons
polaritons
center of mass
excitons
reflectance
oscillations
micrometers
LDS 751
Substrates

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

@article{51097c0f148f4b849f96be4b2a1c1bae,
title = "Center-of-mass quantization of excitons and Fabry-Perot modes of the polariton in ZnSe epilayers",
abstract = "Reflectance properties of ZnSe epilayers grown on GaAs substrates are studied at 80 K. Oscillation features are observed in the region of exciton resonance which are significantly different depending on the epilayer thickness L. For optically thin layers with thickness in the range of several tens of nanometer, reflectance oscillations appear above the light-hole (lh) exciton, while for optically thick layers with thickness in the range of a micrometer, reflectance oscillations appear between 1s and 2s excitons. These oscillations are interpreted as the quantized levels of the exciton center-of-mass motion in the lower branch of the polariton for optically thin layers and Fabry-Perot modes in the upper branch of the polariton for optically thick layers, respectively. The reflectance data are analyzed in the frame work of a dielectric function with a polariton dispersion.",
author = "Sim, {E. D.} and Song, {J. H.} and Chang, {S. K.}",
year = "2002",
month = "3",
day = "7",
doi = "10.1016/S0038-1098(02)00047-9",
language = "English",
volume = "121",
pages = "513--517",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "9-10",

}

Center-of-mass quantization of excitons and Fabry-Perot modes of the polariton in ZnSe epilayers. / Sim, E. D.; Song, J. H.; Chang, S. K.

In: Solid State Communications, Vol. 121, No. 9-10, 07.03.2002, p. 513-517.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Center-of-mass quantization of excitons and Fabry-Perot modes of the polariton in ZnSe epilayers

AU - Sim, E. D.

AU - Song, J. H.

AU - Chang, S. K.

PY - 2002/3/7

Y1 - 2002/3/7

N2 - Reflectance properties of ZnSe epilayers grown on GaAs substrates are studied at 80 K. Oscillation features are observed in the region of exciton resonance which are significantly different depending on the epilayer thickness L. For optically thin layers with thickness in the range of several tens of nanometer, reflectance oscillations appear above the light-hole (lh) exciton, while for optically thick layers with thickness in the range of a micrometer, reflectance oscillations appear between 1s and 2s excitons. These oscillations are interpreted as the quantized levels of the exciton center-of-mass motion in the lower branch of the polariton for optically thin layers and Fabry-Perot modes in the upper branch of the polariton for optically thick layers, respectively. The reflectance data are analyzed in the frame work of a dielectric function with a polariton dispersion.

AB - Reflectance properties of ZnSe epilayers grown on GaAs substrates are studied at 80 K. Oscillation features are observed in the region of exciton resonance which are significantly different depending on the epilayer thickness L. For optically thin layers with thickness in the range of several tens of nanometer, reflectance oscillations appear above the light-hole (lh) exciton, while for optically thick layers with thickness in the range of a micrometer, reflectance oscillations appear between 1s and 2s excitons. These oscillations are interpreted as the quantized levels of the exciton center-of-mass motion in the lower branch of the polariton for optically thin layers and Fabry-Perot modes in the upper branch of the polariton for optically thick layers, respectively. The reflectance data are analyzed in the frame work of a dielectric function with a polariton dispersion.

UR - http://www.scopus.com/inward/record.url?scp=0037034766&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037034766&partnerID=8YFLogxK

U2 - 10.1016/S0038-1098(02)00047-9

DO - 10.1016/S0038-1098(02)00047-9

M3 - Article

AN - SCOPUS:0037034766

VL - 121

SP - 513

EP - 517

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 9-10

ER -