Abstract
Reflectance properties of ZnSe epilayers grown on GaAs substrates are studied at 80 K. Oscillation features are observed in the region of exciton resonance which are significantly different depending on the epilayer thickness L. For optically thin layers with thickness in the range of several tens of nanometer, reflectance oscillations appear above the light-hole (lh) exciton, while for optically thick layers with thickness in the range of a micrometer, reflectance oscillations appear between 1s and 2s excitons. These oscillations are interpreted as the quantized levels of the exciton center-of-mass motion in the lower branch of the polariton for optically thin layers and Fabry-Perot modes in the upper branch of the polariton for optically thick layers, respectively. The reflectance data are analyzed in the frame work of a dielectric function with a polariton dispersion.
| Original language | English |
|---|---|
| Pages (from-to) | 513-517 |
| Number of pages | 5 |
| Journal | Solid State Communications |
| Volume | 121 |
| Issue number | 9-10 |
| DOIs | |
| Publication status | Published - 2002 Mar 7 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
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Center-of-mass quantization of excitons and Fabry-Perot modes of the polariton in ZnSe epilayers. / Sim, E. D.; Song, J. H.; Chang, S. K.
In: Solid State Communications, Vol. 121, No. 9-10, 07.03.2002, p. 513-517.Research output: Contribution to journal › Article
TY - JOUR
T1 - Center-of-mass quantization of excitons and Fabry-Perot modes of the polariton in ZnSe epilayers
AU - Sim, E. D.
AU - Song, J. H.
AU - Chang, S. K.
PY - 2002/3/7
Y1 - 2002/3/7
N2 - Reflectance properties of ZnSe epilayers grown on GaAs substrates are studied at 80 K. Oscillation features are observed in the region of exciton resonance which are significantly different depending on the epilayer thickness L. For optically thin layers with thickness in the range of several tens of nanometer, reflectance oscillations appear above the light-hole (lh) exciton, while for optically thick layers with thickness in the range of a micrometer, reflectance oscillations appear between 1s and 2s excitons. These oscillations are interpreted as the quantized levels of the exciton center-of-mass motion in the lower branch of the polariton for optically thin layers and Fabry-Perot modes in the upper branch of the polariton for optically thick layers, respectively. The reflectance data are analyzed in the frame work of a dielectric function with a polariton dispersion.
AB - Reflectance properties of ZnSe epilayers grown on GaAs substrates are studied at 80 K. Oscillation features are observed in the region of exciton resonance which are significantly different depending on the epilayer thickness L. For optically thin layers with thickness in the range of several tens of nanometer, reflectance oscillations appear above the light-hole (lh) exciton, while for optically thick layers with thickness in the range of a micrometer, reflectance oscillations appear between 1s and 2s excitons. These oscillations are interpreted as the quantized levels of the exciton center-of-mass motion in the lower branch of the polariton for optically thin layers and Fabry-Perot modes in the upper branch of the polariton for optically thick layers, respectively. The reflectance data are analyzed in the frame work of a dielectric function with a polariton dispersion.
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U2 - 10.1016/S0038-1098(02)00047-9
DO - 10.1016/S0038-1098(02)00047-9
M3 - Article
AN - SCOPUS:0037034766
VL - 121
SP - 513
EP - 517
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 9-10
ER -