Center-of-mass quantization of excitons and Fabry-Perot modes of the polariton in ZnSe epilayers

E. D. Sim; J. H. Song; S. K. Chang

doi:10.1016/S0038-1098(02)00047-9

Center-of-mass quantization of excitons and Fabry-Perot modes of the polariton in ZnSe epilayers

E. D. Sim, J. H. Song, S. K. Chang

Department of Physics

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

Reflectance properties of ZnSe epilayers grown on GaAs substrates are studied at 80 K. Oscillation features are observed in the region of exciton resonance which are significantly different depending on the epilayer thickness L. For optically thin layers with thickness in the range of several tens of nanometer, reflectance oscillations appear above the light-hole (lh) exciton, while for optically thick layers with thickness in the range of a micrometer, reflectance oscillations appear between 1s and 2s excitons. These oscillations are interpreted as the quantized levels of the exciton center-of-mass motion in the lower branch of the polariton for optically thin layers and Fabry-Perot modes in the upper branch of the polariton for optically thick layers, respectively. The reflectance data are analyzed in the frame work of a dielectric function with a polariton dispersion.

Original language	English
Pages (from-to)	513-517
Number of pages	5
Journal	Solid State Communications
Volume	121
Issue number	9-10
DOIs	https://doi.org/10.1016/S0038-1098(02)00047-9
Publication status	Published - 2002 Mar 7

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All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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Sim, E. D., Song, J. H., & Chang, S. K. (2002). Center-of-mass quantization of excitons and Fabry-Perot modes of the polariton in ZnSe epilayers. Solid State Communications, 121(9-10), 513-517. https://doi.org/10.1016/S0038-1098(02)00047-9

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abstract = "Reflectance properties of ZnSe epilayers grown on GaAs substrates are studied at 80 K. Oscillation features are observed in the region of exciton resonance which are significantly different depending on the epilayer thickness L. For optically thin layers with thickness in the range of several tens of nanometer, reflectance oscillations appear above the light-hole (lh) exciton, while for optically thick layers with thickness in the range of a micrometer, reflectance oscillations appear between 1s and 2s excitons. These oscillations are interpreted as the quantized levels of the exciton center-of-mass motion in the lower branch of the polariton for optically thin layers and Fabry-Perot modes in the upper branch of the polariton for optically thick layers, respectively. The reflectance data are analyzed in the frame work of a dielectric function with a polariton dispersion.",

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N2 - Reflectance properties of ZnSe epilayers grown on GaAs substrates are studied at 80 K. Oscillation features are observed in the region of exciton resonance which are significantly different depending on the epilayer thickness L. For optically thin layers with thickness in the range of several tens of nanometer, reflectance oscillations appear above the light-hole (lh) exciton, while for optically thick layers with thickness in the range of a micrometer, reflectance oscillations appear between 1s and 2s excitons. These oscillations are interpreted as the quantized levels of the exciton center-of-mass motion in the lower branch of the polariton for optically thin layers and Fabry-Perot modes in the upper branch of the polariton for optically thick layers, respectively. The reflectance data are analyzed in the frame work of a dielectric function with a polariton dispersion.

AB - Reflectance properties of ZnSe epilayers grown on GaAs substrates are studied at 80 K. Oscillation features are observed in the region of exciton resonance which are significantly different depending on the epilayer thickness L. For optically thin layers with thickness in the range of several tens of nanometer, reflectance oscillations appear above the light-hole (lh) exciton, while for optically thick layers with thickness in the range of a micrometer, reflectance oscillations appear between 1s and 2s excitons. These oscillations are interpreted as the quantized levels of the exciton center-of-mass motion in the lower branch of the polariton for optically thin layers and Fabry-Perot modes in the upper branch of the polariton for optically thick layers, respectively. The reflectance data are analyzed in the frame work of a dielectric function with a polariton dispersion.

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10.1016/S0038-1098(02)00047-9