Change in band alignment of Hf O2 films with annealing treatments

C. J. Yim, D. H. Ko, M. H. Jang, K. B. Chung, M. H. Cho, H. T. Jeon

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Energy band alignment of a nitrided Hf O2 film and dependence of the band gap (Eg) on annealing treatments with nitrogen plasma and ambient gases (N2 and O2) were studied by reflection electron energy loss spectra and x-ray photoelectron spectroscopy. We also investigated the nitrogen content in the film and its influence on the band alignment using medium energy ion scattering. The nitrogen incorporated into the Hf O2 film by directed nitrogen plasma treatment significantly decreased the band gap and band offsets, i.e., the incorporated N in the film decreased both conduction and valance band offsets. The nitrogen content in depth direction was dependent on the postannealing conditions using O2 or N2.

Original languageEnglish
Article number012922
JournalApplied Physics Letters
Volume92
Issue number1
DOIs
Publication statusPublished - 2008 Jan 16

Fingerprint

alignment
annealing
nitrogen plasma
nitrogen
ion scattering
x ray spectroscopy
energy bands
conduction bands
energy dissipation
photoelectron spectroscopy
electron energy
gases
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Yim, C. J. ; Ko, D. H. ; Jang, M. H. ; Chung, K. B. ; Cho, M. H. ; Jeon, H. T. / Change in band alignment of Hf O2 films with annealing treatments. In: Applied Physics Letters. 2008 ; Vol. 92, No. 1.
@article{15fae3bd250e495188bedd2585cade69,
title = "Change in band alignment of Hf O2 films with annealing treatments",
abstract = "Energy band alignment of a nitrided Hf O2 film and dependence of the band gap (Eg) on annealing treatments with nitrogen plasma and ambient gases (N2 and O2) were studied by reflection electron energy loss spectra and x-ray photoelectron spectroscopy. We also investigated the nitrogen content in the film and its influence on the band alignment using medium energy ion scattering. The nitrogen incorporated into the Hf O2 film by directed nitrogen plasma treatment significantly decreased the band gap and band offsets, i.e., the incorporated N in the film decreased both conduction and valance band offsets. The nitrogen content in depth direction was dependent on the postannealing conditions using O2 or N2.",
author = "Yim, {C. J.} and Ko, {D. H.} and Jang, {M. H.} and Chung, {K. B.} and Cho, {M. H.} and Jeon, {H. T.}",
year = "2008",
month = "1",
day = "16",
doi = "10.1063/1.2826270",
language = "English",
volume = "92",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

Change in band alignment of Hf O2 films with annealing treatments. / Yim, C. J.; Ko, D. H.; Jang, M. H.; Chung, K. B.; Cho, M. H.; Jeon, H. T.

In: Applied Physics Letters, Vol. 92, No. 1, 012922, 16.01.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Change in band alignment of Hf O2 films with annealing treatments

AU - Yim, C. J.

AU - Ko, D. H.

AU - Jang, M. H.

AU - Chung, K. B.

AU - Cho, M. H.

AU - Jeon, H. T.

PY - 2008/1/16

Y1 - 2008/1/16

N2 - Energy band alignment of a nitrided Hf O2 film and dependence of the band gap (Eg) on annealing treatments with nitrogen plasma and ambient gases (N2 and O2) were studied by reflection electron energy loss spectra and x-ray photoelectron spectroscopy. We also investigated the nitrogen content in the film and its influence on the band alignment using medium energy ion scattering. The nitrogen incorporated into the Hf O2 film by directed nitrogen plasma treatment significantly decreased the band gap and band offsets, i.e., the incorporated N in the film decreased both conduction and valance band offsets. The nitrogen content in depth direction was dependent on the postannealing conditions using O2 or N2.

AB - Energy band alignment of a nitrided Hf O2 film and dependence of the band gap (Eg) on annealing treatments with nitrogen plasma and ambient gases (N2 and O2) were studied by reflection electron energy loss spectra and x-ray photoelectron spectroscopy. We also investigated the nitrogen content in the film and its influence on the band alignment using medium energy ion scattering. The nitrogen incorporated into the Hf O2 film by directed nitrogen plasma treatment significantly decreased the band gap and band offsets, i.e., the incorporated N in the film decreased both conduction and valance band offsets. The nitrogen content in depth direction was dependent on the postannealing conditions using O2 or N2.

UR - http://www.scopus.com/inward/record.url?scp=38049045491&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38049045491&partnerID=8YFLogxK

U2 - 10.1063/1.2826270

DO - 10.1063/1.2826270

M3 - Article

AN - SCOPUS:38049045491

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

M1 - 012922

ER -