Change in band alignment of Hf O2 films with annealing treatments

C. J. Yim, D. H. Ko, M. H. Jang, K. B. Chung, M. H. Cho, H. T. Jeon

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26 Citations (Scopus)

Abstract

Energy band alignment of a nitrided Hf O2 film and dependence of the band gap (Eg) on annealing treatments with nitrogen plasma and ambient gases (N2 and O2) were studied by reflection electron energy loss spectra and x-ray photoelectron spectroscopy. We also investigated the nitrogen content in the film and its influence on the band alignment using medium energy ion scattering. The nitrogen incorporated into the Hf O2 film by directed nitrogen plasma treatment significantly decreased the band gap and band offsets, i.e., the incorporated N in the film decreased both conduction and valance band offsets. The nitrogen content in depth direction was dependent on the postannealing conditions using O2 or N2.

Original languageEnglish
Article number012922
JournalApplied Physics Letters
Volume92
Issue number1
DOIs
Publication statusPublished - 2008

Bibliographical note

Funding Information:
This work was partially supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology as one of the 21 Century Frontier Programs. We gratefully acknowledge the technical advice of K. Chae, C. C. Hwang, and H.-N. Hwang at PAL on beamline 7B1.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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