Change in band alignment of nitrided Hf-silicate films grown on Ge(001) using gaseous NH3

Y. J. Cho, J. W. Mah, C. Y. Kim, H. Kim, H. J. Lee, H. J. Kang, D. W. Moon, S. O. Kim, M. H. Cho

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Abstract

The thermal stability and interfacial reactions of nitrided Hf-silicate [(HfO2)x(SiO2)1-x] thin films grown on Ge(001) substrate by atomic layer deposition were investigated. Bandgap and valence band offset were evaluated as a function of the quantity of SiO 2 in the silicate film and nitridation temperature. After nitridation, the conduction band offset was decreased by 0.12 eV (x=0.5) and 0.39 eV (x=0.75), while the valence band offset was decreased by 0.58 eV (x=0.5) and 0.01 eV (x=0.75). In addition, the bandgap change was significantly affected by the stoichiometry of the films. The band alignment was closely consistent with the amount of nitrogen incorporated into the interfacial region of the film.

Original languageEnglish
Pages (from-to)G33-G36
JournalElectrochemical and Solid-State Letters
Volume13
Issue number5
DOIs
Publication statusPublished - 2010

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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    Cho, Y. J., Mah, J. W., Kim, C. Y., Kim, H., Lee, H. J., Kang, H. J., Moon, D. W., Kim, S. O., & Cho, M. H. (2010). Change in band alignment of nitrided Hf-silicate films grown on Ge(001) using gaseous NH3. Electrochemical and Solid-State Letters, 13(5), G33-G36. https://doi.org/10.1149/1.3322614