Change in band alignment of nitrided Hf-silicate films grown on Ge(001) using gaseous NH3

Y. J. Cho, J. W. Mah, C. Y. Kim, H. Kim, H. J. Lee, H. J. Kang, D. W. Moon, S. O. Kim, M. H. Cho

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The thermal stability and interfacial reactions of nitrided Hf-silicate [(HfO2)x(SiO2)1-x] thin films grown on Ge(001) substrate by atomic layer deposition were investigated. Bandgap and valence band offset were evaluated as a function of the quantity of SiO 2 in the silicate film and nitridation temperature. After nitridation, the conduction band offset was decreased by 0.12 eV (x=0.5) and 0.39 eV (x=0.75), while the valence band offset was decreased by 0.58 eV (x=0.5) and 0.01 eV (x=0.75). In addition, the bandgap change was significantly affected by the stoichiometry of the films. The band alignment was closely consistent with the amount of nitrogen incorporated into the interfacial region of the film.

Original languageEnglish
Pages (from-to)G33-G36
JournalElectrochemical and Solid-State Letters
Volume13
Issue number5
DOIs
Publication statusPublished - 2010 Mar 26

Fingerprint

Silicates
silicates
Nitridation
alignment
Valence bands
Energy gap
valence
Atomic layer deposition
atomic layer epitaxy
Surface chemistry
Conduction bands
Stoichiometry
stoichiometry
conduction bands
Thermodynamic stability
thermal stability
Nitrogen
nitrogen
Thin films
Substrates

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Cho, Y. J. ; Mah, J. W. ; Kim, C. Y. ; Kim, H. ; Lee, H. J. ; Kang, H. J. ; Moon, D. W. ; Kim, S. O. ; Cho, M. H. / Change in band alignment of nitrided Hf-silicate films grown on Ge(001) using gaseous NH3. In: Electrochemical and Solid-State Letters. 2010 ; Vol. 13, No. 5. pp. G33-G36.
@article{bb165a1fd7664f1087823deee16be77c,
title = "Change in band alignment of nitrided Hf-silicate films grown on Ge(001) using gaseous NH3",
abstract = "The thermal stability and interfacial reactions of nitrided Hf-silicate [(HfO2)x(SiO2)1-x] thin films grown on Ge(001) substrate by atomic layer deposition were investigated. Bandgap and valence band offset were evaluated as a function of the quantity of SiO 2 in the silicate film and nitridation temperature. After nitridation, the conduction band offset was decreased by 0.12 eV (x=0.5) and 0.39 eV (x=0.75), while the valence band offset was decreased by 0.58 eV (x=0.5) and 0.01 eV (x=0.75). In addition, the bandgap change was significantly affected by the stoichiometry of the films. The band alignment was closely consistent with the amount of nitrogen incorporated into the interfacial region of the film.",
author = "Cho, {Y. J.} and Mah, {J. W.} and Kim, {C. Y.} and H. Kim and Lee, {H. J.} and Kang, {H. J.} and Moon, {D. W.} and Kim, {S. O.} and Cho, {M. H.}",
year = "2010",
month = "3",
day = "26",
doi = "10.1149/1.3322614",
language = "English",
volume = "13",
pages = "G33--G36",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "5",

}

Change in band alignment of nitrided Hf-silicate films grown on Ge(001) using gaseous NH3. / Cho, Y. J.; Mah, J. W.; Kim, C. Y.; Kim, H.; Lee, H. J.; Kang, H. J.; Moon, D. W.; Kim, S. O.; Cho, M. H.

In: Electrochemical and Solid-State Letters, Vol. 13, No. 5, 26.03.2010, p. G33-G36.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Change in band alignment of nitrided Hf-silicate films grown on Ge(001) using gaseous NH3

AU - Cho, Y. J.

AU - Mah, J. W.

AU - Kim, C. Y.

AU - Kim, H.

AU - Lee, H. J.

AU - Kang, H. J.

AU - Moon, D. W.

AU - Kim, S. O.

AU - Cho, M. H.

PY - 2010/3/26

Y1 - 2010/3/26

N2 - The thermal stability and interfacial reactions of nitrided Hf-silicate [(HfO2)x(SiO2)1-x] thin films grown on Ge(001) substrate by atomic layer deposition were investigated. Bandgap and valence band offset were evaluated as a function of the quantity of SiO 2 in the silicate film and nitridation temperature. After nitridation, the conduction band offset was decreased by 0.12 eV (x=0.5) and 0.39 eV (x=0.75), while the valence band offset was decreased by 0.58 eV (x=0.5) and 0.01 eV (x=0.75). In addition, the bandgap change was significantly affected by the stoichiometry of the films. The band alignment was closely consistent with the amount of nitrogen incorporated into the interfacial region of the film.

AB - The thermal stability and interfacial reactions of nitrided Hf-silicate [(HfO2)x(SiO2)1-x] thin films grown on Ge(001) substrate by atomic layer deposition were investigated. Bandgap and valence band offset were evaluated as a function of the quantity of SiO 2 in the silicate film and nitridation temperature. After nitridation, the conduction band offset was decreased by 0.12 eV (x=0.5) and 0.39 eV (x=0.75), while the valence band offset was decreased by 0.58 eV (x=0.5) and 0.01 eV (x=0.75). In addition, the bandgap change was significantly affected by the stoichiometry of the films. The band alignment was closely consistent with the amount of nitrogen incorporated into the interfacial region of the film.

UR - http://www.scopus.com/inward/record.url?scp=77949760307&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949760307&partnerID=8YFLogxK

U2 - 10.1149/1.3322614

DO - 10.1149/1.3322614

M3 - Article

AN - SCOPUS:77949760307

VL - 13

SP - G33-G36

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 5

ER -