Change in crystalline structure and band alignment in atomic-layer- deposited HfO2 on InP using an annealing treatment

Yu Seon Kang, Dae Kyoung Kim, Mann Ho Cho, Jung Hye Seo, Hyun Kyong Shon, Tae Geol Lee, Young Dae Cho, Sun Wook Kim, Dae Hong Ko, Hyoungsub Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Changes in structural characteristics and band alignments of atomic-layer-deposited HfO2 films on InP (001) as a function of annealing temperature and film thickness were investigated using various analytical techniques. After an annealing at temperatures over 500°C, the HfO2 films were converted into a fully crystalline structure with a tetragonal phase with no detectable interfacial layer between the film and the InP substrate. In-P-O states, produced by interfacial reactions, were increased during the post deposition annealing (PDA) process and oxides were detected in the surface region of the HfO2 film, indicating that In and P atoms had out-diffused. The Eg value of the as-grown HfO2 film was found to be 5.80 ± 0.1 eV. After the PDA treatment, the optical band gap and valence band offset values were significantly affected by the interfacial oxide states between the HfO2 film and InP substrate. Moreover, band bending in InP, due to negative space charges generated by an unstable P-rich interfacial state during atomic layer deposition process was decreased after the annealing treatment.

Original languageEnglish
Pages (from-to)1612-1617
Number of pages6
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume210
Issue number8
DOIs
Publication statusPublished - 2013 Aug 1

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alignment
Annealing
Crystalline materials
annealing
Oxides
oxides
Atomic layer deposition
Optical band gaps
Substrates
atomic layer epitaxy
Valence bands
Surface chemistry
Electric space charge
Film thickness
space charge
film thickness
valence
Atoms
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kang, Yu Seon ; Kim, Dae Kyoung ; Cho, Mann Ho ; Seo, Jung Hye ; Shon, Hyun Kyong ; Lee, Tae Geol ; Cho, Young Dae ; Kim, Sun Wook ; Ko, Dae Hong ; Kim, Hyoungsub. / Change in crystalline structure and band alignment in atomic-layer- deposited HfO2 on InP using an annealing treatment. In: Physica Status Solidi (A) Applications and Materials Science. 2013 ; Vol. 210, No. 8. pp. 1612-1617.
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abstract = "Changes in structural characteristics and band alignments of atomic-layer-deposited HfO2 films on InP (001) as a function of annealing temperature and film thickness were investigated using various analytical techniques. After an annealing at temperatures over 500°C, the HfO2 films were converted into a fully crystalline structure with a tetragonal phase with no detectable interfacial layer between the film and the InP substrate. In-P-O states, produced by interfacial reactions, were increased during the post deposition annealing (PDA) process and oxides were detected in the surface region of the HfO2 film, indicating that In and P atoms had out-diffused. The Eg value of the as-grown HfO2 film was found to be 5.80 ± 0.1 eV. After the PDA treatment, the optical band gap and valence band offset values were significantly affected by the interfacial oxide states between the HfO2 film and InP substrate. Moreover, band bending in InP, due to negative space charges generated by an unstable P-rich interfacial state during atomic layer deposition process was decreased after the annealing treatment.",
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Change in crystalline structure and band alignment in atomic-layer- deposited HfO2 on InP using an annealing treatment. / Kang, Yu Seon; Kim, Dae Kyoung; Cho, Mann Ho; Seo, Jung Hye; Shon, Hyun Kyong; Lee, Tae Geol; Cho, Young Dae; Kim, Sun Wook; Ko, Dae Hong; Kim, Hyoungsub.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 210, No. 8, 01.08.2013, p. 1612-1617.

Research output: Contribution to journalArticle

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T1 - Change in crystalline structure and band alignment in atomic-layer- deposited HfO2 on InP using an annealing treatment

AU - Kang, Yu Seon

AU - Kim, Dae Kyoung

AU - Cho, Mann Ho

AU - Seo, Jung Hye

AU - Shon, Hyun Kyong

AU - Lee, Tae Geol

AU - Cho, Young Dae

AU - Kim, Sun Wook

AU - Ko, Dae Hong

AU - Kim, Hyoungsub

PY - 2013/8/1

Y1 - 2013/8/1

N2 - Changes in structural characteristics and band alignments of atomic-layer-deposited HfO2 films on InP (001) as a function of annealing temperature and film thickness were investigated using various analytical techniques. After an annealing at temperatures over 500°C, the HfO2 films were converted into a fully crystalline structure with a tetragonal phase with no detectable interfacial layer between the film and the InP substrate. In-P-O states, produced by interfacial reactions, were increased during the post deposition annealing (PDA) process and oxides were detected in the surface region of the HfO2 film, indicating that In and P atoms had out-diffused. The Eg value of the as-grown HfO2 film was found to be 5.80 ± 0.1 eV. After the PDA treatment, the optical band gap and valence band offset values were significantly affected by the interfacial oxide states between the HfO2 film and InP substrate. Moreover, band bending in InP, due to negative space charges generated by an unstable P-rich interfacial state during atomic layer deposition process was decreased after the annealing treatment.

AB - Changes in structural characteristics and band alignments of atomic-layer-deposited HfO2 films on InP (001) as a function of annealing temperature and film thickness were investigated using various analytical techniques. After an annealing at temperatures over 500°C, the HfO2 films were converted into a fully crystalline structure with a tetragonal phase with no detectable interfacial layer between the film and the InP substrate. In-P-O states, produced by interfacial reactions, were increased during the post deposition annealing (PDA) process and oxides were detected in the surface region of the HfO2 film, indicating that In and P atoms had out-diffused. The Eg value of the as-grown HfO2 film was found to be 5.80 ± 0.1 eV. After the PDA treatment, the optical band gap and valence band offset values were significantly affected by the interfacial oxide states between the HfO2 film and InP substrate. Moreover, band bending in InP, due to negative space charges generated by an unstable P-rich interfacial state during atomic layer deposition process was decreased after the annealing treatment.

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