Change in depth profile of N highly incorporated into SiO2 by plasma-assisted nitridation

Mann-Ho Cho, K. B. Chung, Y. K. Kim, D. C. Kim, J. H. Heo, B. Y. Koo, Y. K. Shin, U. I. Chung, J. T. Moon, Dae Hong Ko

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The depth profile in nitrided SiO2 films using N2 remote radio frequency plasma was investigated. N was incorporated into the film at levels of up to 27 atom %, largely concentrated at the film surface, and not the film interface. The depth profiling data showed that the depth of incorporated N is dependant on film thickness, i.e., N is incorporated to a depth of about 1.1 nm in a 1.5 nm thick film, while the depth is significantly less to about 0.7 nm in the case of a 4.0 nm thick film. Moreover, under the same nitridation condition, more N content is concentrated nearer to the surface of a 1.5 nm thick oxide film than that of 4.0 nm thick film. N2, generated in the molecule during the nitrogen process is almost completely concentrated at the film interface. After an additional annealing treatment, the molecular N2 diffuses out extensively and N, which is chemically bonded to Si3, is changed into a more stable state with different second-nearest neighbors, accompanied by reoxidation at the film interface of an ultrathin film.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume9
Issue number5
DOIs
Publication statusPublished - 2006 Apr 3

Fingerprint

Nitridation
Plasmas
Thick films
profiles
thick films
Depth profiling
Ultrathin films
Oxide films
Film thickness
Nitrogen
oxide films
radio frequencies
Annealing
film thickness
Atoms
Molecules
nitrogen
annealing
atoms
molecules

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Cho, Mann-Ho ; Chung, K. B. ; Kim, Y. K. ; Kim, D. C. ; Heo, J. H. ; Koo, B. Y. ; Shin, Y. K. ; Chung, U. I. ; Moon, J. T. ; Ko, Dae Hong. / Change in depth profile of N highly incorporated into SiO2 by plasma-assisted nitridation. In: Electrochemical and Solid-State Letters. 2006 ; Vol. 9, No. 5.
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abstract = "The depth profile in nitrided SiO2 films using N2 remote radio frequency plasma was investigated. N was incorporated into the film at levels of up to 27 atom {\%}, largely concentrated at the film surface, and not the film interface. The depth profiling data showed that the depth of incorporated N is dependant on film thickness, i.e., N is incorporated to a depth of about 1.1 nm in a 1.5 nm thick film, while the depth is significantly less to about 0.7 nm in the case of a 4.0 nm thick film. Moreover, under the same nitridation condition, more N content is concentrated nearer to the surface of a 1.5 nm thick oxide film than that of 4.0 nm thick film. N2, generated in the molecule during the nitrogen process is almost completely concentrated at the film interface. After an additional annealing treatment, the molecular N2 diffuses out extensively and N, which is chemically bonded to Si3, is changed into a more stable state with different second-nearest neighbors, accompanied by reoxidation at the film interface of an ultrathin film.",
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Change in depth profile of N highly incorporated into SiO2 by plasma-assisted nitridation. / Cho, Mann-Ho; Chung, K. B.; Kim, Y. K.; Kim, D. C.; Heo, J. H.; Koo, B. Y.; Shin, Y. K.; Chung, U. I.; Moon, J. T.; Ko, Dae Hong.

In: Electrochemical and Solid-State Letters, Vol. 9, No. 5, 03.04.2006.

Research output: Contribution to journalArticle

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AU - Heo, J. H.

AU - Koo, B. Y.

AU - Shin, Y. K.

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AU - Moon, J. T.

AU - Ko, Dae Hong

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N2 - The depth profile in nitrided SiO2 films using N2 remote radio frequency plasma was investigated. N was incorporated into the film at levels of up to 27 atom %, largely concentrated at the film surface, and not the film interface. The depth profiling data showed that the depth of incorporated N is dependant on film thickness, i.e., N is incorporated to a depth of about 1.1 nm in a 1.5 nm thick film, while the depth is significantly less to about 0.7 nm in the case of a 4.0 nm thick film. Moreover, under the same nitridation condition, more N content is concentrated nearer to the surface of a 1.5 nm thick oxide film than that of 4.0 nm thick film. N2, generated in the molecule during the nitrogen process is almost completely concentrated at the film interface. After an additional annealing treatment, the molecular N2 diffuses out extensively and N, which is chemically bonded to Si3, is changed into a more stable state with different second-nearest neighbors, accompanied by reoxidation at the film interface of an ultrathin film.

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