Change in phase separation and electronic structure of nitrided Hf-silicate films as a function of composition and post-nitridation anneal

Mann-Ho Cho, K. B. Chung, Dae Hong Ko

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Abstract

The thermal stability and electronic structure of nitrided xHf O2 (100-x) Si O2 (HfSiO) (x=25%, 50%, and 75%), prepared using an N H3 annealing treatment, were investigated. The quantity of N incorporated into the Hf-silicate film was dependent on the mole fraction of Si O2 in the film: i.e., a silicate film containing a high mole fraction of Si O2 contained a higher quantity of N, resulting in the suppression of phase separation. In particular, the incorporated N easily diffuses out through a silicate film that contains a small quantity of Si O2 during the post-nitridation anneal, while in a film with a high quantity of Si O2, it is relatively stable. The phase separation effect in the nitrided film with a low Si O2 mole fraction was significantly influenced by the stability of N in the film and interface.

Original languageEnglish
Article number142908
JournalApplied Physics Letters
Volume89
Issue number14
DOIs
Publication statusPublished - 2006 Oct 12

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silicates
electronic structure
thermal stability
retarding
annealing

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Change in phase separation and electronic structure of nitrided Hf-silicate films as a function of composition and post-nitridation anneal",
abstract = "The thermal stability and electronic structure of nitrided xHf O2 (100-x) Si O2 (HfSiO) (x=25{\%}, 50{\%}, and 75{\%}), prepared using an N H3 annealing treatment, were investigated. The quantity of N incorporated into the Hf-silicate film was dependent on the mole fraction of Si O2 in the film: i.e., a silicate film containing a high mole fraction of Si O2 contained a higher quantity of N, resulting in the suppression of phase separation. In particular, the incorporated N easily diffuses out through a silicate film that contains a small quantity of Si O2 during the post-nitridation anneal, while in a film with a high quantity of Si O2, it is relatively stable. The phase separation effect in the nitrided film with a low Si O2 mole fraction was significantly influenced by the stability of N in the film and interface.",
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AU - Cho, Mann-Ho

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AU - Ko, Dae Hong

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N2 - The thermal stability and electronic structure of nitrided xHf O2 (100-x) Si O2 (HfSiO) (x=25%, 50%, and 75%), prepared using an N H3 annealing treatment, were investigated. The quantity of N incorporated into the Hf-silicate film was dependent on the mole fraction of Si O2 in the film: i.e., a silicate film containing a high mole fraction of Si O2 contained a higher quantity of N, resulting in the suppression of phase separation. In particular, the incorporated N easily diffuses out through a silicate film that contains a small quantity of Si O2 during the post-nitridation anneal, while in a film with a high quantity of Si O2, it is relatively stable. The phase separation effect in the nitrided film with a low Si O2 mole fraction was significantly influenced by the stability of N in the film and interface.

AB - The thermal stability and electronic structure of nitrided xHf O2 (100-x) Si O2 (HfSiO) (x=25%, 50%, and 75%), prepared using an N H3 annealing treatment, were investigated. The quantity of N incorporated into the Hf-silicate film was dependent on the mole fraction of Si O2 in the film: i.e., a silicate film containing a high mole fraction of Si O2 contained a higher quantity of N, resulting in the suppression of phase separation. In particular, the incorporated N easily diffuses out through a silicate film that contains a small quantity of Si O2 during the post-nitridation anneal, while in a film with a high quantity of Si O2, it is relatively stable. The phase separation effect in the nitrided film with a low Si O2 mole fraction was significantly influenced by the stability of N in the film and interface.

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