Change in the chemical state and thermal stability of HfO 2 by the incorporation of Al 2 O 3

Mann-Ho Cho, H. S. Chang, Y. J. Cho, D. W. Moon, K. H. Min, R. Sinclair, S. K. Kang, Dae Hong Ko, J. H. Lee, J. H. Gu, N. I. Lee

Research output: Contribution to journalArticle

62 Citations (Scopus)

Abstract

The investigation of Al 2 O 3 incorporated HfO 2 films grown by atomic layer deposition using various measurement tools was discussed. It was observed that the accumulation capacitance of the Al 2 O 3 incorporated into HfO 2 film increases as the postannealing temperature increases. It was found that the incorporation of Al 2 O 3 into the HfO 2 has no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO 2 film. It was shown that dissociated Al 2 O 3 on the film surface was removed by a vacuum annealing treatment.

Original languageEnglish
Pages (from-to)571-573
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number4
DOIs
Publication statusPublished - 2004 Jan 26

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thermal stability
atomic layer epitaxy
silicates
capacitance
vacuum
annealing
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Cho, M-H., Chang, H. S., Cho, Y. J., Moon, D. W., Min, K. H., Sinclair, R., ... Lee, N. I. (2004). Change in the chemical state and thermal stability of HfO 2 by the incorporation of Al 2 O 3 Applied Physics Letters, 84(4), 571-573. https://doi.org/10.1063/1.1633976
Cho, Mann-Ho ; Chang, H. S. ; Cho, Y. J. ; Moon, D. W. ; Min, K. H. ; Sinclair, R. ; Kang, S. K. ; Ko, Dae Hong ; Lee, J. H. ; Gu, J. H. ; Lee, N. I. / Change in the chemical state and thermal stability of HfO 2 by the incorporation of Al 2 O 3 In: Applied Physics Letters. 2004 ; Vol. 84, No. 4. pp. 571-573.
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abstract = "The investigation of Al 2 O 3 incorporated HfO 2 films grown by atomic layer deposition using various measurement tools was discussed. It was observed that the accumulation capacitance of the Al 2 O 3 incorporated into HfO 2 film increases as the postannealing temperature increases. It was found that the incorporation of Al 2 O 3 into the HfO 2 has no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO 2 film. It was shown that dissociated Al 2 O 3 on the film surface was removed by a vacuum annealing treatment.",
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Cho, M-H, Chang, HS, Cho, YJ, Moon, DW, Min, KH, Sinclair, R, Kang, SK, Ko, DH, Lee, JH, Gu, JH & Lee, NI 2004, ' Change in the chemical state and thermal stability of HfO 2 by the incorporation of Al 2 O 3 ', Applied Physics Letters, vol. 84, no. 4, pp. 571-573. https://doi.org/10.1063/1.1633976

Change in the chemical state and thermal stability of HfO 2 by the incorporation of Al 2 O 3 . / Cho, Mann-Ho; Chang, H. S.; Cho, Y. J.; Moon, D. W.; Min, K. H.; Sinclair, R.; Kang, S. K.; Ko, Dae Hong; Lee, J. H.; Gu, J. H.; Lee, N. I.

In: Applied Physics Letters, Vol. 84, No. 4, 26.01.2004, p. 571-573.

Research output: Contribution to journalArticle

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