Change in the chemical state and thermal stability of HfO 2 by the incorporation of Al 2O 3

M. H. Cho; H. S. Chang; Y. J. Cho; D. W. Moon; K. H. Min; R. Sinclair; S. K. Kang; D. H. Ko; J. H. Lee; J. H. Gu; N. I. Lee

doi:10.1063/1.1633976

Change in the chemical state and thermal stability of HfO ₂ by the incorporation of Al ₂O ₃

M. H. Cho, H. S. Chang, Y. J. Cho, D. W. Moon, K. H. Min, R. Sinclair, S. K. Kang, D. H. Ko, J. H. Lee, J. H. Gu, N. I. Lee

Research output: Contribution to journal › Article › peer-review

64 Citations (Scopus)

Abstract

The investigation of Al ₂O ₃ incorporated HfO ₂ films grown by atomic layer deposition using various measurement tools was discussed. It was observed that the accumulation capacitance of the Al ₂O ₃ incorporated into HfO ₂ film increases as the postannealing temperature increases. It was found that the incorporation of Al ₂O ₃ into the HfO ₂ has no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO ₂ film. It was shown that dissociated Al ₂O ₃ on the film surface was removed by a vacuum annealing treatment.

Original language	English
Pages (from-to)	571-573
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	4
DOIs	https://doi.org/10.1063/1.1633976
Publication status	Published - 2004 Jan 26

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1633976

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title = "Change in the chemical state and thermal stability of HfO 2 by the incorporation of Al 2O 3 ",

abstract = "The investigation of Al 2O 3 incorporated HfO 2 films grown by atomic layer deposition using various measurement tools was discussed. It was observed that the accumulation capacitance of the Al 2O 3 incorporated into HfO 2 film increases as the postannealing temperature increases. It was found that the incorporation of Al 2O 3 into the HfO 2 has no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO 2 film. It was shown that dissociated Al 2O 3 on the film surface was removed by a vacuum annealing treatment.",

author = "Cho, {M. H.} and Chang, {H. S.} and Cho, {Y. J.} and Moon, {D. W.} and Min, {K. H.} and R. Sinclair and Kang, {S. K.} and Ko, {D. H.} and Lee, {J. H.} and Gu, {J. H.} and Lee, {N. I.}",

year = "2004",

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doi = "10.1063/1.1633976",

language = "English",

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pages = "571--573",

journal = "Applied Physics Letters",

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T1 - Change in the chemical state and thermal stability of HfO 2 by the incorporation of Al 2O 3

AU - Cho, M. H.

AU - Chang, H. S.

AU - Cho, Y. J.

AU - Moon, D. W.

AU - Min, K. H.

AU - Sinclair, R.

AU - Kang, S. K.

AU - Ko, D. H.

AU - Lee, J. H.

AU - Gu, J. H.

AU - Lee, N. I.

PY - 2004/1/26

Y1 - 2004/1/26

N2 - The investigation of Al 2O 3 incorporated HfO 2 films grown by atomic layer deposition using various measurement tools was discussed. It was observed that the accumulation capacitance of the Al 2O 3 incorporated into HfO 2 film increases as the postannealing temperature increases. It was found that the incorporation of Al 2O 3 into the HfO 2 has no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO 2 film. It was shown that dissociated Al 2O 3 on the film surface was removed by a vacuum annealing treatment.

AB - The investigation of Al 2O 3 incorporated HfO 2 films grown by atomic layer deposition using various measurement tools was discussed. It was observed that the accumulation capacitance of the Al 2O 3 incorporated into HfO 2 film increases as the postannealing temperature increases. It was found that the incorporation of Al 2O 3 into the HfO 2 has no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO 2 film. It was shown that dissociated Al 2O 3 on the film surface was removed by a vacuum annealing treatment.

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