Abstract
The investigation of Al 2 O 3 incorporated HfO 2 films grown by atomic layer deposition using various measurement tools was discussed. It was observed that the accumulation capacitance of the Al 2 O 3 incorporated into HfO 2 film increases as the postannealing temperature increases. It was found that the incorporation of Al 2 O 3 into the HfO 2 has no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO 2 film. It was shown that dissociated Al 2 O 3 on the film surface was removed by a vacuum annealing treatment.
| Original language | English |
|---|---|
| Pages (from-to) | 571-573 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 84 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2004 Jan 26 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Change in the chemical state and thermal stability of HfO 2 by the incorporation of Al 2 O 3 . / Cho, Mann-Ho; Chang, H. S.; Cho, Y. J.; Moon, D. W.; Min, K. H.; Sinclair, R.; Kang, S. K.; Ko, Dae Hong; Lee, J. H.; Gu, J. H.; Lee, N. I.
In: Applied Physics Letters, Vol. 84, No. 4, 26.01.2004, p. 571-573.Research output: Contribution to journal › Article
TY - JOUR
T1 - Change in the chemical state and thermal stability of HfO 2 by the incorporation of Al 2 O 3
AU - Cho, Mann-Ho
AU - Chang, H. S.
AU - Cho, Y. J.
AU - Moon, D. W.
AU - Min, K. H.
AU - Sinclair, R.
AU - Kang, S. K.
AU - Ko, Dae Hong
AU - Lee, J. H.
AU - Gu, J. H.
AU - Lee, N. I.
PY - 2004/1/26
Y1 - 2004/1/26
N2 - The investigation of Al 2 O 3 incorporated HfO 2 films grown by atomic layer deposition using various measurement tools was discussed. It was observed that the accumulation capacitance of the Al 2 O 3 incorporated into HfO 2 film increases as the postannealing temperature increases. It was found that the incorporation of Al 2 O 3 into the HfO 2 has no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO 2 film. It was shown that dissociated Al 2 O 3 on the film surface was removed by a vacuum annealing treatment.
AB - The investigation of Al 2 O 3 incorporated HfO 2 films grown by atomic layer deposition using various measurement tools was discussed. It was observed that the accumulation capacitance of the Al 2 O 3 incorporated into HfO 2 film increases as the postannealing temperature increases. It was found that the incorporation of Al 2 O 3 into the HfO 2 has no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO 2 film. It was shown that dissociated Al 2 O 3 on the film surface was removed by a vacuum annealing treatment.
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UR - http://www.scopus.com/inward/citedby.url?scp=10744226117&partnerID=8YFLogxK
U2 - 10.1063/1.1633976
DO - 10.1063/1.1633976
M3 - Article
AN - SCOPUS:10744226117
VL - 84
SP - 571
EP - 573
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 4
ER -