Change in the chemical state and thermal stability of HfO 2 by the incorporation of Al 2O 3

M. H. Cho, H. S. Chang, Y. J. Cho, D. W. Moon, K. H. Min, R. Sinclair, S. K. Kang, D. H. Ko, J. H. Lee, J. H. Gu, N. I. Lee

Research output: Contribution to journalArticlepeer-review

67 Citations (Scopus)


The investigation of Al 2O 3 incorporated HfO 2 films grown by atomic layer deposition using various measurement tools was discussed. It was observed that the accumulation capacitance of the Al 2O 3 incorporated into HfO 2 film increases as the postannealing temperature increases. It was found that the incorporation of Al 2O 3 into the HfO 2 has no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO 2 film. It was shown that dissociated Al 2O 3 on the film surface was removed by a vacuum annealing treatment.

Original languageEnglish
Pages (from-to)571-573
Number of pages3
JournalApplied Physics Letters
Issue number4
Publication statusPublished - 2004 Jan 26

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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