The investigation of Al 2 O 3 incorporated HfO 2 films grown by atomic layer deposition using various measurement tools was discussed. It was observed that the accumulation capacitance of the Al 2 O 3 incorporated into HfO 2 film increases as the postannealing temperature increases. It was found that the incorporation of Al 2 O 3 into the HfO 2 has no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO 2 film. It was shown that dissociated Al 2 O 3 on the film surface was removed by a vacuum annealing treatment.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)