Change in the chemical state and thermal stability of HfO 2 by the incorporation of Al 2 O 3

Mann-Ho Cho, H. S. Chang, Y. J. Cho, D. W. Moon, K. H. Min, R. Sinclair, S. K. Kang, Dae Hong Ko, J. H. Lee, J. H. Gu, N. I. Lee

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Abstract

The investigation of Al 2 O 3 incorporated HfO 2 films grown by atomic layer deposition using various measurement tools was discussed. It was observed that the accumulation capacitance of the Al 2 O 3 incorporated into HfO 2 film increases as the postannealing temperature increases. It was found that the incorporation of Al 2 O 3 into the HfO 2 has no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO 2 film. It was shown that dissociated Al 2 O 3 on the film surface was removed by a vacuum annealing treatment.

Original languageEnglish
Pages (from-to)571-573
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number4
DOIs
Publication statusPublished - 2004 Jan 26

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Cho, M-H., Chang, H. S., Cho, Y. J., Moon, D. W., Min, K. H., Sinclair, R., Kang, S. K., Ko, D. H., Lee, J. H., Gu, J. H., & Lee, N. I. (2004). Change in the chemical state and thermal stability of HfO 2 by the incorporation of Al 2 O 3 Applied Physics Letters, 84(4), 571-573. https://doi.org/10.1063/1.1633976