Change in the interfacial reaction of Hf-silicate film as a function of thickness and stoichiometry

M. H. Cho, C. Y. Kim, K. Moon, K. B. Chung, C. J. Yim, D. H. Ko, H. C. Sohn, Hyeongtag Jeon

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4 Citations (Scopus)

Abstract

Medium energy ion scattering and high-resolution transmission electron microscopy are used to investigate the depth of the interfacial reaction of Hf-silicate film. The interfacial reaction is critically affected by the film thickness and the mole fraction of Hf O2 in silicate film. The interfacial compressive strain generated at the surface of the Si substrate is dependent on the film thickness during the postannealing process in film with a thickness of ∼4 nm. Finally, the phase separation phenomenon demonstrates critically different behaviors at different film thicknesses and stoichiometries because the diffusion of Si from interface to surface is dependent on these factors. Moreover, the oxidation by oxygen impurity in the inert ambient causes Si O2 top formation.

Original languageEnglish
Article number034705
JournalJournal of Chemical Physics
Volume129
Issue number3
DOIs
Publication statusPublished - 2008

Bibliographical note

Funding Information:
This work was partially supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology as one of the 21st Century Frontier Programs. This work was supported by the Korean Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2007-357-C00020).

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

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