Change in the interfacial reaction of Hf-silicate film as a function of thickness and stoichiometry

M. H. Cho, C. Y. Kim, K. Moon, K. B. Chung, C. J. Yim, D. H. Ko, H. C. Sohn, Hyeongtag Jeon

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Medium energy ion scattering and high-resolution transmission electron microscopy are used to investigate the depth of the interfacial reaction of Hf-silicate film. The interfacial reaction is critically affected by the film thickness and the mole fraction of Hf O2 in silicate film. The interfacial compressive strain generated at the surface of the Si substrate is dependent on the film thickness during the postannealing process in film with a thickness of ∼4 nm. Finally, the phase separation phenomenon demonstrates critically different behaviors at different film thicknesses and stoichiometries because the diffusion of Si from interface to surface is dependent on these factors. Moreover, the oxidation by oxygen impurity in the inert ambient causes Si O2 top formation.

Original languageEnglish
Article number034705
JournalJournal of Chemical Physics
Volume129
Issue number3
DOIs
Publication statusPublished - 2008 Jul 29

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Silicates
Surface chemistry
Stoichiometry
Film thickness
stoichiometry
silicates
film thickness
ion scattering
High resolution transmission electron microscopy
Phase separation
Scattering
Impurities
Ions
Oxygen
impurities
Oxidation
transmission electron microscopy
oxidation
causes
high resolution

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

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title = "Change in the interfacial reaction of Hf-silicate film as a function of thickness and stoichiometry",
abstract = "Medium energy ion scattering and high-resolution transmission electron microscopy are used to investigate the depth of the interfacial reaction of Hf-silicate film. The interfacial reaction is critically affected by the film thickness and the mole fraction of Hf O2 in silicate film. The interfacial compressive strain generated at the surface of the Si substrate is dependent on the film thickness during the postannealing process in film with a thickness of ∼4 nm. Finally, the phase separation phenomenon demonstrates critically different behaviors at different film thicknesses and stoichiometries because the diffusion of Si from interface to surface is dependent on these factors. Moreover, the oxidation by oxygen impurity in the inert ambient causes Si O2 top formation.",
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Change in the interfacial reaction of Hf-silicate film as a function of thickness and stoichiometry. / Cho, M. H.; Kim, C. Y.; Moon, K.; Chung, K. B.; Yim, C. J.; Ko, D. H.; Sohn, H. C.; Jeon, Hyeongtag.

In: Journal of Chemical Physics, Vol. 129, No. 3, 034705, 29.07.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Change in the interfacial reaction of Hf-silicate film as a function of thickness and stoichiometry

AU - Cho, M. H.

AU - Kim, C. Y.

AU - Moon, K.

AU - Chung, K. B.

AU - Yim, C. J.

AU - Ko, D. H.

AU - Sohn, H. C.

AU - Jeon, Hyeongtag

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AB - Medium energy ion scattering and high-resolution transmission electron microscopy are used to investigate the depth of the interfacial reaction of Hf-silicate film. The interfacial reaction is critically affected by the film thickness and the mole fraction of Hf O2 in silicate film. The interfacial compressive strain generated at the surface of the Si substrate is dependent on the film thickness during the postannealing process in film with a thickness of ∼4 nm. Finally, the phase separation phenomenon demonstrates critically different behaviors at different film thicknesses and stoichiometries because the diffusion of Si from interface to surface is dependent on these factors. Moreover, the oxidation by oxygen impurity in the inert ambient causes Si O2 top formation.

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