Change of molecular ordering in soluble acenes via solvent annealing and its effect on field-effect mobility

Wi Hyoung Lee, Do Hwan Kim, Jeong Ho Cho, Yunseok Jang, Jung Ah Lim, Donghoon Kwak, Kilwon Cho

Research output: Contribution to journalArticle

74 Citations (Scopus)

Abstract

The increase of the molecular ordering and field-effect mobility in triethylsilylethynyl anthradithiophene (TES ADT) thin film transistors by solvent annealing was investigated. X-ray diffraction data revealed that TES ADT molecules crystallize with silyl groups on the substrate surface. After solvent annealing, spherulites were formed and the field-effect mobilities dramatically increased up to 0.43 cm2 V s (over 100-fold) as result of maximized overlap of π electron clouds along the in-plane direction and the formation of a continuous crystal.

Original languageEnglish
Article number092105
JournalApplied Physics Letters
Volume91
Issue number9
DOIs
Publication statusPublished - 2007 Sep 7

Fingerprint

spherulites
electron clouds
annealing
transistors
thin films
diffraction
crystals
molecules
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lee, Wi Hyoung ; Kim, Do Hwan ; Cho, Jeong Ho ; Jang, Yunseok ; Lim, Jung Ah ; Kwak, Donghoon ; Cho, Kilwon. / Change of molecular ordering in soluble acenes via solvent annealing and its effect on field-effect mobility. In: Applied Physics Letters. 2007 ; Vol. 91, No. 9.
@article{b70c9fcb02b84e14b7718528767ac80f,
title = "Change of molecular ordering in soluble acenes via solvent annealing and its effect on field-effect mobility",
abstract = "The increase of the molecular ordering and field-effect mobility in triethylsilylethynyl anthradithiophene (TES ADT) thin film transistors by solvent annealing was investigated. X-ray diffraction data revealed that TES ADT molecules crystallize with silyl groups on the substrate surface. After solvent annealing, spherulites were formed and the field-effect mobilities dramatically increased up to 0.43 cm2 V s (over 100-fold) as result of maximized overlap of π electron clouds along the in-plane direction and the formation of a continuous crystal.",
author = "Lee, {Wi Hyoung} and Kim, {Do Hwan} and Cho, {Jeong Ho} and Yunseok Jang and Lim, {Jung Ah} and Donghoon Kwak and Kilwon Cho",
year = "2007",
month = "9",
day = "7",
doi = "10.1063/1.2768885",
language = "English",
volume = "91",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

Change of molecular ordering in soluble acenes via solvent annealing and its effect on field-effect mobility. / Lee, Wi Hyoung; Kim, Do Hwan; Cho, Jeong Ho; Jang, Yunseok; Lim, Jung Ah; Kwak, Donghoon; Cho, Kilwon.

In: Applied Physics Letters, Vol. 91, No. 9, 092105, 07.09.2007.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Change of molecular ordering in soluble acenes via solvent annealing and its effect on field-effect mobility

AU - Lee, Wi Hyoung

AU - Kim, Do Hwan

AU - Cho, Jeong Ho

AU - Jang, Yunseok

AU - Lim, Jung Ah

AU - Kwak, Donghoon

AU - Cho, Kilwon

PY - 2007/9/7

Y1 - 2007/9/7

N2 - The increase of the molecular ordering and field-effect mobility in triethylsilylethynyl anthradithiophene (TES ADT) thin film transistors by solvent annealing was investigated. X-ray diffraction data revealed that TES ADT molecules crystallize with silyl groups on the substrate surface. After solvent annealing, spherulites were formed and the field-effect mobilities dramatically increased up to 0.43 cm2 V s (over 100-fold) as result of maximized overlap of π electron clouds along the in-plane direction and the formation of a continuous crystal.

AB - The increase of the molecular ordering and field-effect mobility in triethylsilylethynyl anthradithiophene (TES ADT) thin film transistors by solvent annealing was investigated. X-ray diffraction data revealed that TES ADT molecules crystallize with silyl groups on the substrate surface. After solvent annealing, spherulites were formed and the field-effect mobilities dramatically increased up to 0.43 cm2 V s (over 100-fold) as result of maximized overlap of π electron clouds along the in-plane direction and the formation of a continuous crystal.

UR - http://www.scopus.com/inward/record.url?scp=34548398102&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34548398102&partnerID=8YFLogxK

U2 - 10.1063/1.2768885

DO - 10.1063/1.2768885

M3 - Article

AN - SCOPUS:34548398102

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

M1 - 092105

ER -