The increase of the molecular ordering and field-effect mobility in triethylsilylethynyl anthradithiophene (TES ADT) thin film transistors by solvent annealing was investigated. X-ray diffraction data revealed that TES ADT molecules crystallize with silyl groups on the substrate surface. After solvent annealing, spherulites were formed and the field-effect mobilities dramatically increased up to 0.43 cm2 V s (over 100-fold) as result of maximized overlap of π electron clouds along the in-plane direction and the formation of a continuous crystal.
Bibliographical noteFunding Information:
This work was supported by a grant (F0004022-2006-22) from the Information Display R&D Center under the 21st Century Frontier R&D Program, the ERC Program of MOST/KOSEF (R11-2003-006-03005-0), the BK21 Program of the Ministry of Education and Human Resources Development of Korea, and the Pohang Accelerator Laboratory for providing the 3C2, 8C1, and 10C1 beamlines used in this study.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)