We have fabricated TiN/(HfO 2)/TiO 2/Pt/Ti stacks on SiO 2/Si substrates and investigated the characteristics of the bipolar resistive switching of those stacks. Compared to the single TiO 2 structure, more stable bipolar switching in the current-voltage curve was accomplished in the HfO 2/TiO 2 structure. We obtained a smaller range of SET variation, a larger sensing margin, and higher resistance values of the high-resistance state with an additional HfO 2 layer. Especially, in the case of the HfO 2/TiO 2 structure, the set voltage was decreased after O 2 annealing. The heat treatment in an ambient of O 2 and an additional HfO 2 layer can improve the bipolar resistive switching behavior for resistive random access memory applications.
Bibliographical noteFunding Information:
This work was supported by the Industry-university Cooperation Project of Hynix Semiconductor Inc., “National Program for 0.1-Terabit Nonvolatile Memory Device Development”.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)