Changes in electronic structure of Lax Aly O films as a function of postdeposition annealing temperature

J. W. Ma, W. J. Lee, M. H. Cho, K. B. Chung, C. H. An, H. Kim, Y. J. Cho, D. W. Moon, H. J. Cho

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5 Citations (Scopus)


Amorphous Lax Aly O films, containing 100, 50, and 30% La, were deposited by atomic layer deposition (ALD) on ultrathin Si O 2 films (1 nm). Changes in the depth profile, as a function of composition, and structure were examined by medium energy ion scattering and transmission electron microscopy. The electronic structure of the Lax Aly O films was investigated by X-ray photoelectron spectroscopy as a function of La concentration and postdeposition annealing temperature. In the case of a pure La2 O3 film without Al2 O 3, the Si O2 at the interfacial layer had been converted to Si O2-x and La silicate during the ALD process. However, in case of a La 2 O3 film with Al2 O3, interfacial reactions were significantly suppressed. In particular, silicate formation in the La2 O3 films gradually increased with the increasing annealing temperature, while that in La2 O3 films incorporated Al2 O3 was suppressed up to an annealing temperature of 800°C.

Original languageEnglish
Pages (from-to)G79-G82
JournalJournal of the Electrochemical Society
Issue number3
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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