Changes in Gd2O3 films grown on Si(100) as a function of nitridation temperature and Zr incorporation

W. J. Lee, M. H. Cho, Y. K. Kim, J. H. Baeck, I. S. Jeong, K. Jeong, K. B. Chung, S. Y. Kim, D. H. Ko

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Abstract

We investigated Gd2O3 and Zr-incorporated Gd2O3 films grown on Si (100) as a function of nitridation temperature under an NH3 ambient and the incorporation of Zr into the film. The formation of a silicide layer at the interfacial region was suppressed in cases of Zr-incorporated or NH3-nitried Gd2O3 films. The crystalline structure was affected when zirconium, with a relatively small ionic radius, was substituted with gadolinium. When the concentration of Zr atoms in a Gd2O3 film reaches a specific level (Gd0.6Zr1.9O4.3), phase transition occurred from cubic Gd2O3 to monoclinic ZrO2. However, the monoclinic phase disappeared after nitridation at 900 °C in an NH3 ambient. The majority of the nitrogen atoms accumulated near the interface in the films and the concentration of incorporated N increased with increasing Zr content and NH3 annealing temperature. Moreover, nitrogen atoms bonded to Zr-silicate at the interface, in preference to ZrO2 in the film. These incorporation characteristics of nitrogen into Zr-incorporated Gd2O3 film have an effect on the thermal stability and crystalline structure of a film.

Original languageEnglish
Pages (from-to)1682-1688
Number of pages7
JournalThin Solid Films
Volume518
Issue number6
DOIs
Publication statusPublished - 2010 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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