Changes in the structure of an atomic-layer-deposited HfO2 film on a GaAs (100) substrate as a function of postannealing temperature

C. Y. Kim, S. W. Cho, M. H. Cho, K. B. Chung, D. C. Suh, D. H. Ko, C. H. An, H. Kim, H. J. Lee

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Physics & Astronomy