Changes in thermal conductivity and bandgap of SiC single crystals in accordance with thermal stress

Jun Gyu Kim, Young Hee Kim, Kyu Min Lee, Hyun Chul Sohn, Doo Jin Choi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Thermal stress according to growth temperature and surface region of single crystal SiC was analyzed using ABAQUS simulation. Three 6H SiC single crystal wafers grown with the PVT method under the same growth conditions by different companies were used to analyze the changes in properties caused by thermal stress. All three wafers differed in diffraction distance. The wafer with the higher tensile stress from thermal stress showed a larger diffraction distance. Also the impact of thermal stress on crystallinity and defect density was analyzed. Our results showed that the wafer with the higher thermal stress had lower crystallinity and more defects, and we also confirmed that the wafer had a lower thermal conductivity and bandgap.

Original languageEnglish
Pages (from-to)6-10
Number of pages5
JournalThermochimica Acta
Volume542
DOIs
Publication statusPublished - 2012 Aug 20

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry

Fingerprint Dive into the research topics of 'Changes in thermal conductivity and bandgap of SiC single crystals in accordance with thermal stress'. Together they form a unique fingerprint.

Cite this