Abstract
Based on the subthreshold region model described in Paper I [Cho, J. Appl. Phys. 113, 214506 (2013)], a continuous drain current model with a variation of channel doping concentration (NA) for symmetric double gate metal-oxide-semiconductor field-effect transistor is presented. Here, the inversion region drain current model is derived by solving the long-channel 1D Poisson's equation due to the strong screening effects by electrons. The continuous drain current model is obtained by interpolating the subthreshold region model and the inversion region model. Since the subthreshold region model includes the short-channel effects, it is shown that the continuous drain current modeling results are in good agreement with commercially available 2D numerical simulation results from the subthreshold to the inversion region in the wide range of NA.
| Original language | English |
|---|---|
| Article number | 214507 |
| Journal | Journal of Applied Physics |
| Volume | 113 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - 2013 Jun 7 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Channel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. II. Continuous drain current model from subthreshold to inversion region. / Cho, Edward Namkyu; Shin, Yong Hyeon; Yun, Ilgu.
In: Journal of Applied Physics, Vol. 113, No. 21, 214507, 07.06.2013.Research output: Contribution to journal › Article
TY - JOUR
T1 - Channel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. II. Continuous drain current model from subthreshold to inversion region
AU - Cho, Edward Namkyu
AU - Shin, Yong Hyeon
AU - Yun, Ilgu
PY - 2013/6/7
Y1 - 2013/6/7
N2 - Based on the subthreshold region model described in Paper I [Cho, J. Appl. Phys. 113, 214506 (2013)], a continuous drain current model with a variation of channel doping concentration (NA) for symmetric double gate metal-oxide-semiconductor field-effect transistor is presented. Here, the inversion region drain current model is derived by solving the long-channel 1D Poisson's equation due to the strong screening effects by electrons. The continuous drain current model is obtained by interpolating the subthreshold region model and the inversion region model. Since the subthreshold region model includes the short-channel effects, it is shown that the continuous drain current modeling results are in good agreement with commercially available 2D numerical simulation results from the subthreshold to the inversion region in the wide range of NA.
AB - Based on the subthreshold region model described in Paper I [Cho, J. Appl. Phys. 113, 214506 (2013)], a continuous drain current model with a variation of channel doping concentration (NA) for symmetric double gate metal-oxide-semiconductor field-effect transistor is presented. Here, the inversion region drain current model is derived by solving the long-channel 1D Poisson's equation due to the strong screening effects by electrons. The continuous drain current model is obtained by interpolating the subthreshold region model and the inversion region model. Since the subthreshold region model includes the short-channel effects, it is shown that the continuous drain current modeling results are in good agreement with commercially available 2D numerical simulation results from the subthreshold to the inversion region in the wide range of NA.
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U2 - 10.1063/1.4808453
DO - 10.1063/1.4808453
M3 - Article
AN - SCOPUS:84879394584
VL - 113
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 21
M1 - 214507
ER -