Channel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. II. Continuous drain current model from subthreshold to inversion region

Based on the subthreshold region model described in Paper I [Cho, J. Appl. Phys. 113, 214506 (2013)], a continuous drain current model with a variation of channel doping concentration (N_A) for symmetric double gate metal-oxide-semiconductor field-effect transistor is presented. Here, the inversion region drain current model is derived by solving the long-channel 1D Poisson's equation due to the strong screening effects by electrons. The continuous drain current model is obtained by interpolating the subthreshold region model and the inversion region model. Since the subthreshold region model includes the short-channel effects, it is shown that the continuous drain current modeling results are in good agreement with commercially available 2D numerical simulation results from the subthreshold to the inversion region in the wide range of N_A.