Channel length-dependent charge detrapping on threshold voltage shift of amorphous InGaZnO TFTs under dynamic bias stress

Suehye Park, Edward Namkyu Cho, Ilgu Yun

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The demand for amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) has been increasing due to their high mobility and transparent properties. In this paper, we report on the channel length (L)-dependent charge detrapping phenomenon of a-IGZO TFTs by observing a threshold voltage Vth shift under dynamic bias stress. Dynamic gate bias stresses are applied to the devices with three types of L: 25, 50, and 100 μm. The positive gate bias with different stress durations is followed by the negative gate bias. Under the sequential negative gate bias stress, the reversible shift of Vth increases due to charge detrapping of the previously trapped charges. As L increases, the negative shift of Vth increases due to the decreased charge detrapping time and high electric field induced by a small subgap density of states.

Original languageEnglish
Pages (from-to)1689-1694
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume60
Issue number5
DOIs
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Channel length-dependent charge detrapping on threshold voltage shift of amorphous InGaZnO TFTs under dynamic bias stress'. Together they form a unique fingerprint.

  • Cite this