Channel strain evolution of recessed source/drain Si1-xC x structures by modifying scaling factors

S. W. Kim, D. S. Byeon, M. Jung, Dae Hong Ko, S. Chopra, Y. Kim, H. J. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We experimentally evaluated the effects of scaling on the channel strain in terms of scaling factors in recessed source/drain Si1-xCx structures. Epitaxial Si1-xCx films were deposited on recessed source/drain structures using a selective epitaxial growth process combined with reduced pressure chemical vapor deposition. Based on nano beam diffraction analyses and device simulation, it showed that the major transistor dimensions (gate length, source/ drain length, and the raised source/ drain height) influenced the channel strain: the channel strain increased with the gate length decreasing, and the raised height increasing, while declining with the reduction of the source/ drain length.

Original languageEnglish
Title of host publicationSiGe, Ge, and Related Compounds 5
Subtitle of host publicationMaterials, Processing, and Devices
Pages801-805
Number of pages5
Edition9
DOIs
Publication statusPublished - 2012 Dec 1
Event5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States
Duration: 2012 Oct 72012 Oct 12

Publication series

NameECS Transactions
Number9
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period12/10/712/10/12

Fingerprint

Epitaxial growth
Chemical vapor deposition
Transistors
Diffraction

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kim, S. W., Byeon, D. S., Jung, M., Ko, D. H., Chopra, S., Kim, Y., & Lee, H. J. (2012). Channel strain evolution of recessed source/drain Si1-xC x structures by modifying scaling factors. In SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices (9 ed., pp. 801-805). (ECS Transactions; Vol. 50, No. 9). https://doi.org/10.1149/05009.0801ecst
Kim, S. W. ; Byeon, D. S. ; Jung, M. ; Ko, Dae Hong ; Chopra, S. ; Kim, Y. ; Lee, H. J. / Channel strain evolution of recessed source/drain Si1-xC x structures by modifying scaling factors. SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9. ed. 2012. pp. 801-805 (ECS Transactions; 9).
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Kim, SW, Byeon, DS, Jung, M, Ko, DH, Chopra, S, Kim, Y & Lee, HJ 2012, Channel strain evolution of recessed source/drain Si1-xC x structures by modifying scaling factors. in SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 edn, ECS Transactions, no. 9, vol. 50, pp. 801-805, 5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting, Honolulu, HI, United States, 12/10/7. https://doi.org/10.1149/05009.0801ecst

Channel strain evolution of recessed source/drain Si1-xC x structures by modifying scaling factors. / Kim, S. W.; Byeon, D. S.; Jung, M.; Ko, Dae Hong; Chopra, S.; Kim, Y.; Lee, H. J.

SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9. ed. 2012. p. 801-805 (ECS Transactions; Vol. 50, No. 9).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Kim SW, Byeon DS, Jung M, Ko DH, Chopra S, Kim Y et al. Channel strain evolution of recessed source/drain Si1-xC x structures by modifying scaling factors. In SiGe, Ge, and Related Compounds 5: Materials, Processing, and Devices. 9 ed. 2012. p. 801-805. (ECS Transactions; 9). https://doi.org/10.1149/05009.0801ecst