Channel/ferroelectric interface modification in ZnO non-volatile memory TFT with P(VDF-TrFE) polymer

Chan Ho Park, Kwang H. Lee, Byoung H. Lee, Myung M. Sung, Seongil Im

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

We report on the fabrication of ZnO non-volatile memory thin-film transistors (NVM-TFTs) with 200 nm-thick poly(vinylidene fluoride/ trifluoroethylene)[P(VDF-TrFE)] ferroelectric layer. The NVM-TFTs have been tested for the most optimum properties in respect of their memory windows and memory retention properties, as prepared with the modified channel/ferroelectric interfaces inserted by respective thin buffer layers: 1, 3, 5, 10, and 20 nm-thin Al2O3, or 1 nm-thin inorganic-organic hybrid dielectrics of a AlOx-(or TiOx-) self assembled monolayer (SAM). All our NVM-TFTs operated on glass substrates under the low-voltage WR-ER pulses of ±20 V with a maximum field effect mobility of ∼1 cm 2/V s and memory window of 12∼16 V. Among all the NVM-TFTs, the device with the 5 nm-thin Al2O3 buffer demonstrated the longest retention time of more than 104 s without much reduction of write-to-erase (WR/ER) current ratio, keeping a good memory window of ∼16 V and WR/ER ratio of ∼40.

Original languageEnglish
Pages (from-to)2638-2643
Number of pages6
JournalJournal of Materials Chemistry
Volume20
Issue number13
DOIs
Publication statusPublished - 2010 Mar 23

Fingerprint

Ferroelectric materials
Polymers
Data storage equipment
Thin film transistors
polyvinylidene fluoride
trifluoroethene
Self assembled monolayers
Buffer layers
Buffers
Fabrication
Glass
Electric potential
Substrates

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

Park, Chan Ho ; Lee, Kwang H. ; Lee, Byoung H. ; Sung, Myung M. ; Im, Seongil. / Channel/ferroelectric interface modification in ZnO non-volatile memory TFT with P(VDF-TrFE) polymer. In: Journal of Materials Chemistry. 2010 ; Vol. 20, No. 13. pp. 2638-2643.
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abstract = "We report on the fabrication of ZnO non-volatile memory thin-film transistors (NVM-TFTs) with 200 nm-thick poly(vinylidene fluoride/ trifluoroethylene)[P(VDF-TrFE)] ferroelectric layer. The NVM-TFTs have been tested for the most optimum properties in respect of their memory windows and memory retention properties, as prepared with the modified channel/ferroelectric interfaces inserted by respective thin buffer layers: 1, 3, 5, 10, and 20 nm-thin Al2O3, or 1 nm-thin inorganic-organic hybrid dielectrics of a AlOx-(or TiOx-) self assembled monolayer (SAM). All our NVM-TFTs operated on glass substrates under the low-voltage WR-ER pulses of ±20 V with a maximum field effect mobility of ∼1 cm 2/V s and memory window of 12∼16 V. Among all the NVM-TFTs, the device with the 5 nm-thin Al2O3 buffer demonstrated the longest retention time of more than 104 s without much reduction of write-to-erase (WR/ER) current ratio, keeping a good memory window of ∼16 V and WR/ER ratio of ∼40.",
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Channel/ferroelectric interface modification in ZnO non-volatile memory TFT with P(VDF-TrFE) polymer. / Park, Chan Ho; Lee, Kwang H.; Lee, Byoung H.; Sung, Myung M.; Im, Seongil.

In: Journal of Materials Chemistry, Vol. 20, No. 13, 23.03.2010, p. 2638-2643.

Research output: Contribution to journalArticle

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