Single-electron trap, consisting of 8 Al/Al2O3/Al tunnel junctions, was fabricated and characterized in normal and superconducting states of Al. The output current of the single-electron transistor exhibited plateaus and hysteresis with varying trap voltage, which was attributed to trapping and releasing of electrons. The activation energy obtained from the voltage interval between current plateaus was consistent with the estimated value.
|Number of pages||4|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2000 Sep|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)