Characteristics of 8-junction Al single-electron trap

Hye Mi So, Jinhee Kim, Jong Wan Park, Kyung Hwa Yoo, Jeong O. Lee, Ju Jin Kim

Research output: Contribution to journalArticle

Abstract

Single-electron trap, consisting of 8 Al/Al2O3/Al tunnel junctions, was fabricated and characterized in normal and superconducting states of Al. The output current of the single-electron transistor exhibited plateaus and hysteresis with varying trap voltage, which was attributed to trapping and releasing of electrons. The activation energy obtained from the voltage interval between current plateaus was consistent with the estimated value.

Original languageEnglish
Pages (from-to)347-350
Number of pages4
JournalJournal of the Korean Physical Society
Volume37
Issue number3
Publication statusPublished - 2000 Sep

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    So, H. M., Kim, J., Park, J. W., Yoo, K. H., Lee, J. O., & Kim, J. J. (2000). Characteristics of 8-junction Al single-electron trap. Journal of the Korean Physical Society, 37(3), 347-350.