Characteristics of 8-junction Al single-electron trap

Hye Mi So; Jinhee Kim; Jong Wan Park; Kyung Hwa Yoo; Jeong O. Lee; Ju Jin Kim

Characteristics of 8-junction Al single-electron trap

Hye Mi So, Jinhee Kim, Jong Wan Park, Kyung Hwa Yoo, Jeong O. Lee, Ju Jin Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Single-electron trap, consisting of 8 Al/Al₂O₃/Al tunnel junctions, was fabricated and characterized in normal and superconducting states of Al. The output current of the single-electron transistor exhibited plateaus and hysteresis with varying trap voltage, which was attributed to trapping and releasing of electrons. The activation energy obtained from the voltage interval between current plateaus was consistent with the estimated value.

Original language	English
Pages (from-to)	347-350
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	37
Issue number	3
Publication status	Published - 2000 Sept

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Cite this

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title = "Characteristics of 8-junction Al single-electron trap",

abstract = "Single-electron trap, consisting of 8 Al/Al2O3/Al tunnel junctions, was fabricated and characterized in normal and superconducting states of Al. The output current of the single-electron transistor exhibited plateaus and hysteresis with varying trap voltage, which was attributed to trapping and releasing of electrons. The activation energy obtained from the voltage interval between current plateaus was consistent with the estimated value.",

author = "So, {Hye Mi} and Jinhee Kim and Park, {Jong Wan} and Yoo, {Kyung Hwa} and Lee, {Jeong O.} and Kim, {Ju Jin}",

year = "2000",

month = sep,

language = "English",

volume = "37",

pages = "347--350",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

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AU - So, Hye Mi

AU - Kim, Jinhee

AU - Park, Jong Wan

AU - Yoo, Kyung Hwa

AU - Lee, Jeong O.

AU - Kim, Ju Jin

PY - 2000/9

Y1 - 2000/9

N2 - Single-electron trap, consisting of 8 Al/Al2O3/Al tunnel junctions, was fabricated and characterized in normal and superconducting states of Al. The output current of the single-electron transistor exhibited plateaus and hysteresis with varying trap voltage, which was attributed to trapping and releasing of electrons. The activation energy obtained from the voltage interval between current plateaus was consistent with the estimated value.

AB - Single-electron trap, consisting of 8 Al/Al2O3/Al tunnel junctions, was fabricated and characterized in normal and superconducting states of Al. The output current of the single-electron transistor exhibited plateaus and hysteresis with varying trap voltage, which was attributed to trapping and releasing of electrons. The activation energy obtained from the voltage interval between current plateaus was consistent with the estimated value.

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M3 - Article

AN - SCOPUS:0034258240

SN - 0374-4884

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SP - 347

EP - 350

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 3

ER -

Characteristics of 8-junction Al single-electron trap

Abstract

All Science Journal Classification (ASJC) codes

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