Characteristics of 8-junction Al single-electron trap

Hye Mi So, Jinhee Kim, Jong Wan Park, Kyung-hwa Yoo, Jeong O. Lee, Ju Jin Kim

Research output: Contribution to journalArticle

Abstract

Single-electron trap, consisting of 8 Al/Al2O3/Al tunnel junctions, was fabricated and characterized in normal and superconducting states of Al. The output current of the single-electron transistor exhibited plateaus and hysteresis with varying trap voltage, which was attributed to trapping and releasing of electrons. The activation energy obtained from the voltage interval between current plateaus was consistent with the estimated value.

Original languageEnglish
Pages (from-to)347-350
Number of pages4
JournalJournal of the Korean Physical Society
Volume37
Issue number3
Publication statusPublished - 2000 Sep 1

Fingerprint

plateaus
traps
single electron transistors
releasing
electric potential
tunnel junctions
electrons
trapping
hysteresis
activation energy
intervals
output

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

So, H. M., Kim, J., Park, J. W., Yoo, K., Lee, J. O., & Kim, J. J. (2000). Characteristics of 8-junction Al single-electron trap. Journal of the Korean Physical Society, 37(3), 347-350.
So, Hye Mi ; Kim, Jinhee ; Park, Jong Wan ; Yoo, Kyung-hwa ; Lee, Jeong O. ; Kim, Ju Jin. / Characteristics of 8-junction Al single-electron trap. In: Journal of the Korean Physical Society. 2000 ; Vol. 37, No. 3. pp. 347-350.
@article{3d99c85f9c304435b2bda31d264ffdfa,
title = "Characteristics of 8-junction Al single-electron trap",
abstract = "Single-electron trap, consisting of 8 Al/Al2O3/Al tunnel junctions, was fabricated and characterized in normal and superconducting states of Al. The output current of the single-electron transistor exhibited plateaus and hysteresis with varying trap voltage, which was attributed to trapping and releasing of electrons. The activation energy obtained from the voltage interval between current plateaus was consistent with the estimated value.",
author = "So, {Hye Mi} and Jinhee Kim and Park, {Jong Wan} and Kyung-hwa Yoo and Lee, {Jeong O.} and Kim, {Ju Jin}",
year = "2000",
month = "9",
day = "1",
language = "English",
volume = "37",
pages = "347--350",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "3",

}

So, HM, Kim, J, Park, JW, Yoo, K, Lee, JO & Kim, JJ 2000, 'Characteristics of 8-junction Al single-electron trap', Journal of the Korean Physical Society, vol. 37, no. 3, pp. 347-350.

Characteristics of 8-junction Al single-electron trap. / So, Hye Mi; Kim, Jinhee; Park, Jong Wan; Yoo, Kyung-hwa; Lee, Jeong O.; Kim, Ju Jin.

In: Journal of the Korean Physical Society, Vol. 37, No. 3, 01.09.2000, p. 347-350.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Characteristics of 8-junction Al single-electron trap

AU - So, Hye Mi

AU - Kim, Jinhee

AU - Park, Jong Wan

AU - Yoo, Kyung-hwa

AU - Lee, Jeong O.

AU - Kim, Ju Jin

PY - 2000/9/1

Y1 - 2000/9/1

N2 - Single-electron trap, consisting of 8 Al/Al2O3/Al tunnel junctions, was fabricated and characterized in normal and superconducting states of Al. The output current of the single-electron transistor exhibited plateaus and hysteresis with varying trap voltage, which was attributed to trapping and releasing of electrons. The activation energy obtained from the voltage interval between current plateaus was consistent with the estimated value.

AB - Single-electron trap, consisting of 8 Al/Al2O3/Al tunnel junctions, was fabricated and characterized in normal and superconducting states of Al. The output current of the single-electron transistor exhibited plateaus and hysteresis with varying trap voltage, which was attributed to trapping and releasing of electrons. The activation energy obtained from the voltage interval between current plateaus was consistent with the estimated value.

UR - http://www.scopus.com/inward/record.url?scp=0034258240&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034258240&partnerID=8YFLogxK

M3 - Article

VL - 37

SP - 347

EP - 350

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 3

ER -

So HM, Kim J, Park JW, Yoo K, Lee JO, Kim JJ. Characteristics of 8-junction Al single-electron trap. Journal of the Korean Physical Society. 2000 Sep 1;37(3):347-350.