Characteristics of a gain switched Fabry-Perot semiconductor laser at 650 nm wavelength

Research output: Contribution to conference › Paper › peer-review

Original language	English
Pages	194-195
Number of pages	2
DOIs	https://doi.org/10.1109/cleo.2001.947697
Publication status	Published - 2001
Event	Conference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, United States Duration: 2001 May 6 → 2001 May 11

Other	Conference on Lasers and Electro-Optics (CLEO)
Country/Territory	United States
City	Baltimore, MD
Period	01/5/6 → 01/5/11

All Science Journal Classification (ASJC) codes

@conference{80d98cbd3e2a431a81406ed1db8ead10,

title = "Characteristics of a gain switched Fabry-Perot semiconductor laser at 650 nm wavelength",

author = "Oh, {K. H.} and Paek, {U. C.} and Kim, {D. Y.}",

year = "2001",

doi = "10.1109/cleo.2001.947697",

language = "English",

pages = "194--195",

note = "Conference on Lasers and Electro-Optics (CLEO) ; Conference date: 06-05-2001 Through 11-05-2001",

}

TY - CONF

T1 - Characteristics of a gain switched Fabry-Perot semiconductor laser at 650 nm wavelength

AU - Oh, K. H.

AU - Paek, U. C.

AU - Kim, D. Y.

PY - 2001

Y1 - 2001

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U2 - 10.1109/cleo.2001.947697

DO - 10.1109/cleo.2001.947697

M3 - Paper

AN - SCOPUS:0034801165

SP - 194

EP - 195

T2 - Conference on Lasers and Electro-Optics (CLEO)

Y2 - 6 May 2001 through 11 May 2001

ER -