Characteristics of a gain switched Fabry-Perot semiconductor laser at 650 nm wavelength

K. H. Oh, U. C. Paek, D. Y. Kim

Research output: Contribution to conferencePaper

Abstract

Gain switched Fabry-Perot semiconductor laser operating at 650 nm wavelength was studied for optical transmission applications. Optical gain switching conditions were analyzed by varying modulation frequency and injection currents. The change in peak intensity and pulse width of the generated optical pulses were also analyzed. Experimental results indicate that the shortest pulse obtained was 33.279 psec with the laser.

Original languageEnglish
Pages194-195
Number of pages2
Publication statusPublished - 2001 Oct 8
EventConference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, United States
Duration: 2001 May 62001 May 11

Other

OtherConference on Lasers and Electro-Optics (CLEO)
CountryUnited States
CityBaltimore, MD
Period01/5/601/5/11

Fingerprint

Semiconductor lasers
Laser pulses
Wavelength
Optical gain
Frequency modulation
Light transmission
Lasers

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Oh, K. H., Paek, U. C., & Kim, D. Y. (2001). Characteristics of a gain switched Fabry-Perot semiconductor laser at 650 nm wavelength. 194-195. Paper presented at Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, United States.
Oh, K. H. ; Paek, U. C. ; Kim, D. Y. / Characteristics of a gain switched Fabry-Perot semiconductor laser at 650 nm wavelength. Paper presented at Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, United States.2 p.
@conference{80d98cbd3e2a431a81406ed1db8ead10,
title = "Characteristics of a gain switched Fabry-Perot semiconductor laser at 650 nm wavelength",
abstract = "Gain switched Fabry-Perot semiconductor laser operating at 650 nm wavelength was studied for optical transmission applications. Optical gain switching conditions were analyzed by varying modulation frequency and injection currents. The change in peak intensity and pulse width of the generated optical pulses were also analyzed. Experimental results indicate that the shortest pulse obtained was 33.279 psec with the laser.",
author = "Oh, {K. H.} and Paek, {U. C.} and Kim, {D. Y.}",
year = "2001",
month = "10",
day = "8",
language = "English",
pages = "194--195",
note = "Conference on Lasers and Electro-Optics (CLEO) ; Conference date: 06-05-2001 Through 11-05-2001",

}

Oh, KH, Paek, UC & Kim, DY 2001, 'Characteristics of a gain switched Fabry-Perot semiconductor laser at 650 nm wavelength' Paper presented at Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, United States, 01/5/6 - 01/5/11, pp. 194-195.

Characteristics of a gain switched Fabry-Perot semiconductor laser at 650 nm wavelength. / Oh, K. H.; Paek, U. C.; Kim, D. Y.

2001. 194-195 Paper presented at Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, United States.

Research output: Contribution to conferencePaper

TY - CONF

T1 - Characteristics of a gain switched Fabry-Perot semiconductor laser at 650 nm wavelength

AU - Oh, K. H.

AU - Paek, U. C.

AU - Kim, D. Y.

PY - 2001/10/8

Y1 - 2001/10/8

N2 - Gain switched Fabry-Perot semiconductor laser operating at 650 nm wavelength was studied for optical transmission applications. Optical gain switching conditions were analyzed by varying modulation frequency and injection currents. The change in peak intensity and pulse width of the generated optical pulses were also analyzed. Experimental results indicate that the shortest pulse obtained was 33.279 psec with the laser.

AB - Gain switched Fabry-Perot semiconductor laser operating at 650 nm wavelength was studied for optical transmission applications. Optical gain switching conditions were analyzed by varying modulation frequency and injection currents. The change in peak intensity and pulse width of the generated optical pulses were also analyzed. Experimental results indicate that the shortest pulse obtained was 33.279 psec with the laser.

UR - http://www.scopus.com/inward/record.url?scp=0034801165&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034801165&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034801165

SP - 194

EP - 195

ER -

Oh KH, Paek UC, Kim DY. Characteristics of a gain switched Fabry-Perot semiconductor laser at 650 nm wavelength. 2001. Paper presented at Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, United States.