Characteristics of a gain switched Fabry-Perot semiconductor laser at 650 nm wavelength

K. H. Oh, U. C. Paek, D. Y. Kim

Research output: Contribution to conferencePaper

Abstract

Gain switched Fabry-Perot semiconductor laser operating at 650 nm wavelength was studied for optical transmission applications. Optical gain switching conditions were analyzed by varying modulation frequency and injection currents. The change in peak intensity and pulse width of the generated optical pulses were also analyzed. Experimental results indicate that the shortest pulse obtained was 33.279 psec with the laser.

Original languageEnglish
Pages194-195
Number of pages2
Publication statusPublished - 2001 Oct 8
EventConference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, United States
Duration: 2001 May 62001 May 11

Other

OtherConference on Lasers and Electro-Optics (CLEO)
CountryUnited States
CityBaltimore, MD
Period01/5/601/5/11

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Oh, K. H., Paek, U. C., & Kim, D. Y. (2001). Characteristics of a gain switched Fabry-Perot semiconductor laser at 650 nm wavelength. 194-195. Paper presented at Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, United States.