Characteristics of a gain switched Fabry-Perot semiconductor laser at 650 nm wavelength

K. H. Oh, U. C. Paek, D. Y. Kim

Research output: Contribution to conferencePaper

Original languageEnglish
Pages194-195
Number of pages2
DOIs
Publication statusPublished - 2001
EventConference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, United States
Duration: 2001 May 62001 May 11

Other

OtherConference on Lasers and Electro-Optics (CLEO)
CountryUnited States
CityBaltimore, MD
Period01/5/601/5/11

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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    Oh, K. H., Paek, U. C., & Kim, D. Y. (2001). Characteristics of a gain switched Fabry-Perot semiconductor laser at 650 nm wavelength. 194-195. Paper presented at Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, United States. https://doi.org/10.1109/cleo.2001.947697