We demonstrate high temperature electrical spin injection and detection in degenerately p -doped GaAs in vertical spin valves using valence band electron tunneling. The maximum measured magnetoresistance at 10 and 300 K is 40% and ∼1%, respectively. Spin relaxation in these devices was found to be relatively insensitive to temperature (T) for T>125 K. The spin injection and detection efficiencies are mostly dominated by the ferromagnetic contact polarization and spin independent transport at the ferromagnet/semiconductor interface.
Bibliographical noteFunding Information:
This work is supported by the Office of Naval Research (Grant No. N000140910086), National Science Foundation (Grant No. ECCS-0754367), and the Department of Science and Technology (SR/S3/EECE/0060/2009).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)