TY - JOUR
T1 - Characteristics of a planar InP/InGaAs avalanche photodiode with a thin multiplication layer
AU - Hyun, Kyung Sook
AU - Kwon, Yong Hwan
AU - Yun, Ilgu
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2004/4
Y1 - 2004/4
N2 - We present a simple fabrication method for and the characteristics of a high speed InGaAs/InP avalanche photodiode (APD) with one floating guard ring. The APD structure that we propose consists of InP multiplication layer with a greatly reduced width and a highly doped electric field buffer layer, We also adopted a floating guard ring and a shaped main junction with recess etching for reliable operation of the APD. A long lifetime, exceeding ∼10 9 hours, was estimated from accelerated life tests. Also, reliable operation in the device center region was examined by measuring the two-dimensional gain, The gain and bandwidth product of the APDs was measured to be as high as 80 GHz.
AB - We present a simple fabrication method for and the characteristics of a high speed InGaAs/InP avalanche photodiode (APD) with one floating guard ring. The APD structure that we propose consists of InP multiplication layer with a greatly reduced width and a highly doped electric field buffer layer, We also adopted a floating guard ring and a shaped main junction with recess etching for reliable operation of the APD. A long lifetime, exceeding ∼10 9 hours, was estimated from accelerated life tests. Also, reliable operation in the device center region was examined by measuring the two-dimensional gain, The gain and bandwidth product of the APDs was measured to be as high as 80 GHz.
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M3 - Article
AN - SCOPUS:2442570758
VL - 44
SP - L779-L784
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 4
ER -