Abstract
We present a simple fabrication method for and the characteristics of a high speed InGaAs/InP avalanche photodiode (APD) with one floating guard ring. The APD structure that we propose consists of InP multiplication layer with a greatly reduced width and a highly doped electric field buffer layer, We also adopted a floating guard ring and a shaped main junction with recess etching for reliable operation of the APD. A long lifetime, exceeding ∼10 9 hours, was estimated from accelerated life tests. Also, reliable operation in the device center region was examined by measuring the two-dimensional gain, The gain and bandwidth product of the APDs was measured to be as high as 80 GHz.
| Original language | English |
|---|---|
| Journal | Journal of the Korean Physical Society |
| Volume | 44 |
| Issue number | 4 |
| Publication status | Published - 2004 Apr 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
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Characteristics of a planar InP/InGaAs avalanche photodiode with a thin multiplication layer. / Hyun, Kyung Sook; Kwon, Yong Hwan; Yun, Ilgu.
In: Journal of the Korean Physical Society, Vol. 44, No. 4, 01.04.2004.Research output: Contribution to journal › Article
TY - JOUR
T1 - Characteristics of a planar InP/InGaAs avalanche photodiode with a thin multiplication layer
AU - Hyun, Kyung Sook
AU - Kwon, Yong Hwan
AU - Yun, Ilgu
PY - 2004/4/1
Y1 - 2004/4/1
N2 - We present a simple fabrication method for and the characteristics of a high speed InGaAs/InP avalanche photodiode (APD) with one floating guard ring. The APD structure that we propose consists of InP multiplication layer with a greatly reduced width and a highly doped electric field buffer layer, We also adopted a floating guard ring and a shaped main junction with recess etching for reliable operation of the APD. A long lifetime, exceeding ∼10 9 hours, was estimated from accelerated life tests. Also, reliable operation in the device center region was examined by measuring the two-dimensional gain, The gain and bandwidth product of the APDs was measured to be as high as 80 GHz.
AB - We present a simple fabrication method for and the characteristics of a high speed InGaAs/InP avalanche photodiode (APD) with one floating guard ring. The APD structure that we propose consists of InP multiplication layer with a greatly reduced width and a highly doped electric field buffer layer, We also adopted a floating guard ring and a shaped main junction with recess etching for reliable operation of the APD. A long lifetime, exceeding ∼10 9 hours, was estimated from accelerated life tests. Also, reliable operation in the device center region was examined by measuring the two-dimensional gain, The gain and bandwidth product of the APDs was measured to be as high as 80 GHz.
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UR - http://www.scopus.com/inward/citedby.url?scp=2442570758&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:2442570758
VL - 44
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 4
ER -