Abstract
We present a simple fabrication method for and the characteristics of a high speed InGaAs/InP avalanche photodiode (APD) with one floating guard ring. The APD structure that we propose consists of InP multiplication layer with a greatly reduced width and a highly doped electric field buffer layer, We also adopted a floating guard ring and a shaped main junction with recess etching for reliable operation of the APD. A long lifetime, exceeding ∼10 9 hours, was estimated from accelerated life tests. Also, reliable operation in the device center region was examined by measuring the two-dimensional gain, The gain and bandwidth product of the APDs was measured to be as high as 80 GHz.
| Original language | English |
|---|---|
| Pages (from-to) | L779-L784 |
| Journal | Journal of the Korean Physical Society |
| Volume | 44 |
| Issue number | 4 |
| Publication status | Published - 2004 Apr |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Hyun, K. S., Kwon, Y. H., & Yun, I. (2004). Characteristics of a planar InP/InGaAs avalanche photodiode with a thin multiplication layer. Journal of the Korean Physical Society, 44(4), L779-L784.