Characteristics of a planar InP/InGaAs avalanche photodiode with a thin multiplication layer

Kyung Sook Hyun, Yong Hwan Kwon, Ilgu Yun

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We present a simple fabrication method for and the characteristics of a high speed InGaAs/InP avalanche photodiode (APD) with one floating guard ring. The APD structure that we propose consists of InP multiplication layer with a greatly reduced width and a highly doped electric field buffer layer, We also adopted a floating guard ring and a shaped main junction with recess etching for reliable operation of the APD. A long lifetime, exceeding ∼10 9 hours, was estimated from accelerated life tests. Also, reliable operation in the device center region was examined by measuring the two-dimensional gain, The gain and bandwidth product of the APDs was measured to be as high as 80 GHz.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume44
Issue number4
Publication statusPublished - 2004 Apr 1

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multiplication
avalanches
photodiodes
floating
accelerated life tests
recesses
rings
buffers
high speed
etching
bandwidth
life (durability)
fabrication
electric fields
products

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "We present a simple fabrication method for and the characteristics of a high speed InGaAs/InP avalanche photodiode (APD) with one floating guard ring. The APD structure that we propose consists of InP multiplication layer with a greatly reduced width and a highly doped electric field buffer layer, We also adopted a floating guard ring and a shaped main junction with recess etching for reliable operation of the APD. A long lifetime, exceeding ∼10 9 hours, was estimated from accelerated life tests. Also, reliable operation in the device center region was examined by measuring the two-dimensional gain, The gain and bandwidth product of the APDs was measured to be as high as 80 GHz.",
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Characteristics of a planar InP/InGaAs avalanche photodiode with a thin multiplication layer. / Hyun, Kyung Sook; Kwon, Yong Hwan; Yun, Ilgu.

In: Journal of the Korean Physical Society, Vol. 44, No. 4, 01.04.2004.

Research output: Contribution to journalArticle

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AB - We present a simple fabrication method for and the characteristics of a high speed InGaAs/InP avalanche photodiode (APD) with one floating guard ring. The APD structure that we propose consists of InP multiplication layer with a greatly reduced width and a highly doped electric field buffer layer, We also adopted a floating guard ring and a shaped main junction with recess etching for reliable operation of the APD. A long lifetime, exceeding ∼10 9 hours, was estimated from accelerated life tests. Also, reliable operation in the device center region was examined by measuring the two-dimensional gain, The gain and bandwidth product of the APDs was measured to be as high as 80 GHz.

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