Characteristics of a planar InP/InGaAs avalanche photodiode with a thin multiplication layer

Kyung Sook Hyun, Yong Hwan Kwon, Ilgu Yun

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

We present a simple fabrication method for and the characteristics of a high speed InGaAs/InP avalanche photodiode (APD) with one floating guard ring. The APD structure that we propose consists of InP multiplication layer with a greatly reduced width and a highly doped electric field buffer layer, We also adopted a floating guard ring and a shaped main junction with recess etching for reliable operation of the APD. A long lifetime, exceeding ∼10 9 hours, was estimated from accelerated life tests. Also, reliable operation in the device center region was examined by measuring the two-dimensional gain, The gain and bandwidth product of the APDs was measured to be as high as 80 GHz.

Original languageEnglish
Pages (from-to)L779-L784
JournalJournal of the Korean Physical Society
Volume44
Issue number4
Publication statusPublished - 2004 Apr

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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