Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device

Byeong Yun Oh, Jin Woo Han, Dae Shik Seo, Kwang Young Kim, Seong Ho Baek, Hwan Soo Jang, Jae Hyun Kim

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) ?lms deposited on glass by atomic layer deposition (ALD) with various Al2O3?lm contents for use as transparent electrodes. Unlike ?lms fabricated by a sputtering method, the diffraction peak position of the ?lms deposited by ALD progressively moved to a higher angle with increasing Al2O3?lm content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3?lm content, a ZnO:Al ?lm with low electrical resistivity (9.84 × 10-4ω cm) was obtained at an Al2O3?lm content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2V-1s-1, 94.23%, and 3.6 eV, respectively. Moreover, the estimated ?gure of merit value of our best sample was 8.2 mω-1. These results suggest that ZnO:Al ?lms deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation

Original languageEnglish
Pages (from-to)5330-5335
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Issue number7
Publication statusPublished - 2012 Jul 1

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics


Dive into the research topics of 'Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device'. Together they form a unique fingerprint.

Cite this