Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device

Byeong Yun Oh, Jin Woo Han, Dae-Shik Seo, Kwang Young Kim, Seong Ho Baek, Hwan Soo Jang, Jae Hyun Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) ?lms deposited on glass by atomic layer deposition (ALD) with various Al2O3?lm contents for use as transparent electrodes. Unlike ?lms fabricated by a sputtering method, the diffraction peak position of the ?lms deposited by ALD progressively moved to a higher angle with increasing Al2O3?lm content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3?lm content, a ZnO:Al ?lm with low electrical resistivity (9.84 × 10-4ω cm) was obtained at an Al2O3?lm content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2V-1s-1, 94.23%, and 3.6 eV, respectively. Moreover, the estimated ?gure of merit value of our best sample was 8.2 mω-1. These results suggest that ZnO:Al ?lms deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation

Original languageEnglish
Pages (from-to)5330-5335
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number7
DOIs
Publication statusPublished - 2012 Jul 1

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Nanowires
Silicon
Electrodes
Equipment and Supplies
Glass
Growth

All Science Journal Classification (ASJC) codes

  • Medicine(all)

Cite this

Oh, Byeong Yun ; Han, Jin Woo ; Seo, Dae-Shik ; Kim, Kwang Young ; Baek, Seong Ho ; Jang, Hwan Soo ; Kim, Jae Hyun. / Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device. In: Journal of Nanoscience and Nanotechnology. 2012 ; Vol. 12, No. 7. pp. 5330-5335.
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abstract = "We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) ?lms deposited on glass by atomic layer deposition (ALD) with various Al2O3?lm contents for use as transparent electrodes. Unlike ?lms fabricated by a sputtering method, the diffraction peak position of the ?lms deposited by ALD progressively moved to a higher angle with increasing Al2O3?lm content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3?lm content, a ZnO:Al ?lm with low electrical resistivity (9.84 × 10-4ω cm) was obtained at an Al2O3?lm content of 3.17{\%}, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt{\%}, 11.20 cm2V-1s-1, 94.23{\%}, and 3.6 eV, respectively. Moreover, the estimated ?gure of merit value of our best sample was 8.2 mω-1. These results suggest that ZnO:Al ?lms deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation",
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Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device. / Oh, Byeong Yun; Han, Jin Woo; Seo, Dae-Shik; Kim, Kwang Young; Baek, Seong Ho; Jang, Hwan Soo; Kim, Jae Hyun.

In: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 7, 01.07.2012, p. 5330-5335.

Research output: Contribution to journalArticle

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AU - Baek, Seong Ho

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