Abstract
We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) ?lms deposited on glass by atomic layer deposition (ALD) with various Al2O3?lm contents for use as transparent electrodes. Unlike ?lms fabricated by a sputtering method, the diffraction peak position of the ?lms deposited by ALD progressively moved to a higher angle with increasing Al2O3?lm content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3?lm content, a ZnO:Al ?lm with low electrical resistivity (9.84 × 10-4ω cm) was obtained at an Al2O3?lm content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2V-1s-1, 94.23%, and 3.6 eV, respectively. Moreover, the estimated ?gure of merit value of our best sample was 8.2 mω-1. These results suggest that ZnO:Al ?lms deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation
| Original language | English |
|---|---|
| Pages (from-to) | 5330-5335 |
| Number of pages | 6 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 12 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2012 Jul 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Medicine(all)
Cite this
}
Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device. / Oh, Byeong Yun; Han, Jin Woo; Seo, Dae-Shik; Kim, Kwang Young; Baek, Seong Ho; Jang, Hwan Soo; Kim, Jae Hyun.
In: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 7, 01.07.2012, p. 5330-5335.Research output: Contribution to journal › Article
TY - JOUR
T1 - Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device
AU - Oh, Byeong Yun
AU - Han, Jin Woo
AU - Seo, Dae-Shik
AU - Kim, Kwang Young
AU - Baek, Seong Ho
AU - Jang, Hwan Soo
AU - Kim, Jae Hyun
PY - 2012/7/1
Y1 - 2012/7/1
N2 - We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) ?lms deposited on glass by atomic layer deposition (ALD) with various Al2O3?lm contents for use as transparent electrodes. Unlike ?lms fabricated by a sputtering method, the diffraction peak position of the ?lms deposited by ALD progressively moved to a higher angle with increasing Al2O3?lm content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3?lm content, a ZnO:Al ?lm with low electrical resistivity (9.84 × 10-4ω cm) was obtained at an Al2O3?lm content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2V-1s-1, 94.23%, and 3.6 eV, respectively. Moreover, the estimated ?gure of merit value of our best sample was 8.2 mω-1. These results suggest that ZnO:Al ?lms deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation
AB - We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) ?lms deposited on glass by atomic layer deposition (ALD) with various Al2O3?lm contents for use as transparent electrodes. Unlike ?lms fabricated by a sputtering method, the diffraction peak position of the ?lms deposited by ALD progressively moved to a higher angle with increasing Al2O3?lm content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3?lm content, a ZnO:Al ?lm with low electrical resistivity (9.84 × 10-4ω cm) was obtained at an Al2O3?lm content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2V-1s-1, 94.23%, and 3.6 eV, respectively. Moreover, the estimated ?gure of merit value of our best sample was 8.2 mω-1. These results suggest that ZnO:Al ?lms deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation
UR - http://www.scopus.com/inward/record.url?scp=84865120281&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84865120281&partnerID=8YFLogxK
U2 - 10.1166/jnn.2012.6255
DO - 10.1166/jnn.2012.6255
M3 - Article
AN - SCOPUS:84865120281
VL - 12
SP - 5330
EP - 5335
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
SN - 1533-4880
IS - 7
ER -