TY - JOUR
T1 - Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device
AU - Oh, Byeong Yun
AU - Han, Jin Woo
AU - Seo, Dae Shik
AU - Kim, Kwang Young
AU - Baek, Seong Ho
AU - Jang, Hwan Soo
AU - Kim, Jae Hyun
N1 - Copyright:
Copyright 2016 Elsevier B.V., All rights reserved.
PY - 2012/7/1
Y1 - 2012/7/1
N2 - We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) ?lms deposited on glass by atomic layer deposition (ALD) with various Al2O3?lm contents for use as transparent electrodes. Unlike ?lms fabricated by a sputtering method, the diffraction peak position of the ?lms deposited by ALD progressively moved to a higher angle with increasing Al2O3?lm content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3?lm content, a ZnO:Al ?lm with low electrical resistivity (9.84 × 10-4ω cm) was obtained at an Al2O3?lm content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2V-1s-1, 94.23%, and 3.6 eV, respectively. Moreover, the estimated ?gure of merit value of our best sample was 8.2 mω-1. These results suggest that ZnO:Al ?lms deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation
AB - We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) ?lms deposited on glass by atomic layer deposition (ALD) with various Al2O3?lm contents for use as transparent electrodes. Unlike ?lms fabricated by a sputtering method, the diffraction peak position of the ?lms deposited by ALD progressively moved to a higher angle with increasing Al2O3?lm content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3?lm content, a ZnO:Al ?lm with low electrical resistivity (9.84 × 10-4ω cm) was obtained at an Al2O3?lm content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2V-1s-1, 94.23%, and 3.6 eV, respectively. Moreover, the estimated ?gure of merit value of our best sample was 8.2 mω-1. These results suggest that ZnO:Al ?lms deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation
UR - http://www.scopus.com/inward/record.url?scp=84865120281&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84865120281&partnerID=8YFLogxK
U2 - 10.1166/jnn.2012.6255
DO - 10.1166/jnn.2012.6255
M3 - Article
AN - SCOPUS:84865120281
VL - 12
SP - 5330
EP - 5335
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
SN - 1533-4880
IS - 7
ER -