Characteristics of Al2O3 gate dielectrics partially fluorinated by a low energy fluorine beam

Sung Woo Kim; Byoung Jae Park; Se Koo Kang; Bo Hyun Kong; Hyung Koun Cho; Geun Young Yeom; Sungho Heo; Hyunsang Hwang

doi:10.1063/1.2975183

Characteristics of Al₂O₃ gate dielectrics partially fluorinated by a low energy fluorine beam

Sung Woo Kim, Byoung Jae Park, Se Koo Kang, Bo Hyun Kong, Hyung Koun Cho, Geun Young Yeom, Sungho Heo, Hyunsang Hwang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The partial fluorination of Al₂O₃ gate dielectrics was examined by exposing an oxide-nitride-aluminum oxide (ONA) stack to a low energy fluorine beam, and its effect on the properties of the ONA was investigated. Exposing ONA to about 10 eV fluorine beam resulted in a 5-nm-thick AlO_xF_y layer on the ONA by replacing some Al-O to Al-F. The electrical properties such as leakage current and memory window characteristics were improved after fluorination of the ONA, possibly due to the improved charge trapping characteristics through the formation of an AlO _xF_y layer on the Al₂O₃ without changing the blocking layer thickness.

Original language	English
Article number	191506
Journal	Applied Physics Letters
Volume	93
Issue number	19
DOIs	https://doi.org/10.1063/1.2975183
Publication status	Published - 2008

Bibliographical note

Funding Information:
This work supported by the National Program for Tera-Level Nano devices of the Korea Ministry of Education, Science and Technology (MEST) as a 21st Century Frontier Program.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2975183

Cite this

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title = "Characteristics of Al2O3 gate dielectrics partially fluorinated by a low energy fluorine beam",

abstract = "The partial fluorination of Al2O3 gate dielectrics was examined by exposing an oxide-nitride-aluminum oxide (ONA) stack to a low energy fluorine beam, and its effect on the properties of the ONA was investigated. Exposing ONA to about 10 eV fluorine beam resulted in a 5-nm-thick AlOxFy layer on the ONA by replacing some Al-O to Al-F. The electrical properties such as leakage current and memory window characteristics were improved after fluorination of the ONA, possibly due to the improved charge trapping characteristics through the formation of an AlO xFy layer on the Al2O3 without changing the blocking layer thickness.",

author = "Kim, {Sung Woo} and Park, {Byoung Jae} and Kang, {Se Koo} and Kong, {Bo Hyun} and Cho, {Hyung Koun} and Yeom, {Geun Young} and Sungho Heo and Hyunsang Hwang",

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AU - Kim, Sung Woo

AU - Park, Byoung Jae

AU - Kang, Se Koo

AU - Kong, Bo Hyun

AU - Cho, Hyung Koun

AU - Yeom, Geun Young

AU - Heo, Sungho

AU - Hwang, Hyunsang

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AB - The partial fluorination of Al2O3 gate dielectrics was examined by exposing an oxide-nitride-aluminum oxide (ONA) stack to a low energy fluorine beam, and its effect on the properties of the ONA was investigated. Exposing ONA to about 10 eV fluorine beam resulted in a 5-nm-thick AlOxFy layer on the ONA by replacing some Al-O to Al-F. The electrical properties such as leakage current and memory window characteristics were improved after fluorination of the ONA, possibly due to the improved charge trapping characteristics through the formation of an AlO xFy layer on the Al2O3 without changing the blocking layer thickness.

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