Characteristics of Al2O3 gate dielectrics partially fluorinated by a low energy fluorine beam

Sung Woo Kim, Byoung Jae Park, Se Koo Kang, Bo Hyun Kong, Hyung Koun Cho, Geun Young Yeom, Sungho Heo, Hyunsang Hwang

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The partial fluorination of Al2O3 gate dielectrics was examined by exposing an oxide-nitride-aluminum oxide (ONA) stack to a low energy fluorine beam, and its effect on the properties of the ONA was investigated. Exposing ONA to about 10 eV fluorine beam resulted in a 5-nm-thick AlOxFy layer on the ONA by replacing some Al-O to Al-F. The electrical properties such as leakage current and memory window characteristics were improved after fluorination of the ONA, possibly due to the improved charge trapping characteristics through the formation of an AlO xFy layer on the Al2O3 without changing the blocking layer thickness.

Original languageEnglish
Article number191506
JournalApplied Physics Letters
Issue number19
Publication statusPublished - 2008

Bibliographical note

Funding Information:
This work supported by the National Program for Tera-Level Nano devices of the Korea Ministry of Education, Science and Technology (MEST) as a 21st Century Frontier Program.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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