Characteristics of chemical-vapor-deposited copper on the Cu-seeded TiN substrates

Seok Kim, Doo Jin Choi, Kyoung Ryul Yoon, Ki Hwan Kim, Seok Keun Koh

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Cu film was deposited by a MOCVD (Metal Organic Chemical Vapor Deposition) process on Cu-5, 40 Å, 130 Å seeded TiN and an as-received TiN substrate using 1,1,1,5,5,5-hexafluoroacetylacetonate-2,4-pentadionate (vinyltrimethylsilane) Copper(I) as a Cu precursor. The seeding process was carried out by PIBD (Partially Ionized Beam Deposition) process. By the presence of a seeding layer, the deposition rate of CVD-Cu films was slightly increased, the (111) preferred orientation was enhanced in the case of 130 Å seeding, and especially the continuity of Cu-grains was improved in the surface-reaction-limited region. The improvement of continuity decreased the resistivity of CVD-Cu films; minimum value of 2.42 μΩ · cm. After a vacuum (about 3 × 10-5 Torr) annealing process at temperatures of 400, 500, and 600°C for 30 min, Cu grains grew and coalesced with each other. This sintering effect reduced the resistivity of CVD-Cu films and was prominent in the case of seeding.

Original languageEnglish
Pages (from-to)218-224
Number of pages7
JournalThin Solid Films
Volume311
Issue number1-2
DOIs
Publication statusPublished - 1997 Dec 31

Fingerprint

inoculation
Copper
Chemical vapor deposition
Vapors
vapors
copper
vapor deposition
Substrates
continuity
Organic Chemicals
electrical resistivity
Organic chemicals
Surface reactions
Deposition rates
surface reactions
metalorganic chemical vapor deposition
sintering
Sintering
Metals
Vacuum

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Kim, Seok ; Choi, Doo Jin ; Yoon, Kyoung Ryul ; Kim, Ki Hwan ; Koh, Seok Keun. / Characteristics of chemical-vapor-deposited copper on the Cu-seeded TiN substrates. In: Thin Solid Films. 1997 ; Vol. 311, No. 1-2. pp. 218-224.
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Characteristics of chemical-vapor-deposited copper on the Cu-seeded TiN substrates. / Kim, Seok; Choi, Doo Jin; Yoon, Kyoung Ryul; Kim, Ki Hwan; Koh, Seok Keun.

In: Thin Solid Films, Vol. 311, No. 1-2, 31.12.1997, p. 218-224.

Research output: Contribution to journalArticle

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