Characteristics of Cu2ZnSnSe4 and Cu 2ZnSn(Se,S)4 absorber thin films prepared by post selenization and sequential sulfurization of co-evaporated Cu-Zn-Sn precursors

Seung Min Lee, Yong Soo Cho

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26 Citations (Scopus)

Abstract

Cu2ZnSnSe4 and Cu2ZnSn(S,Se)4 absorber films processed from co-evaporated Cu-Zn-Sn precursor films by post selenization and sequential sulfurization were investigated by varying Cu/(Zn + Sn) ratio and selenization/ sufurization temperatures. Structural, electrical and optical properties were largely dependent on the experimental parameters. The selenization process of the Cu-Zn-Sn precursors was successful in producing Cu2ZnSnSe4 phase with dense microstructure when the Cu/(Zn + Sn) ratio of 0.8 was initially used. The absorber led to a photovoltaic cell efficiency of ~1.04% with a short circuit current of ~21.9 mA/ cm2. Sequential sulfurization of the selenized films resulted in completely- transformed Cu2ZnSn(S,Se)4 phase with a minor secondary phase of Cu2S. Cell performance was not improved after sulfurization primarily due to poor microstructural features that became worse with increasing the Cu/(Zn + Sn) ratio.

Original languageEnglish
Pages (from-to)279-283
Number of pages5
JournalJournal of Alloys and Compounds
Volume579
DOIs
Publication statusPublished - 2013 Jan 1

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Thin films
Photovoltaic cells
Short circuit currents
Structural properties
Electric properties
Optical properties
Microstructure
Temperature

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Characteristics of Cu2ZnSnSe4 and Cu 2ZnSn(Se,S)4 absorber thin films prepared by post selenization and sequential sulfurization of co-evaporated Cu-Zn-Sn precursors",
abstract = "Cu2ZnSnSe4 and Cu2ZnSn(S,Se)4 absorber films processed from co-evaporated Cu-Zn-Sn precursor films by post selenization and sequential sulfurization were investigated by varying Cu/(Zn + Sn) ratio and selenization/ sufurization temperatures. Structural, electrical and optical properties were largely dependent on the experimental parameters. The selenization process of the Cu-Zn-Sn precursors was successful in producing Cu2ZnSnSe4 phase with dense microstructure when the Cu/(Zn + Sn) ratio of 0.8 was initially used. The absorber led to a photovoltaic cell efficiency of ~1.04{\%} with a short circuit current of ~21.9 mA/ cm2. Sequential sulfurization of the selenized films resulted in completely- transformed Cu2ZnSn(S,Se)4 phase with a minor secondary phase of Cu2S. Cell performance was not improved after sulfurization primarily due to poor microstructural features that became worse with increasing the Cu/(Zn + Sn) ratio.",
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T1 - Characteristics of Cu2ZnSnSe4 and Cu 2ZnSn(Se,S)4 absorber thin films prepared by post selenization and sequential sulfurization of co-evaporated Cu-Zn-Sn precursors

AU - Lee, Seung Min

AU - Cho, Yong Soo

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N2 - Cu2ZnSnSe4 and Cu2ZnSn(S,Se)4 absorber films processed from co-evaporated Cu-Zn-Sn precursor films by post selenization and sequential sulfurization were investigated by varying Cu/(Zn + Sn) ratio and selenization/ sufurization temperatures. Structural, electrical and optical properties were largely dependent on the experimental parameters. The selenization process of the Cu-Zn-Sn precursors was successful in producing Cu2ZnSnSe4 phase with dense microstructure when the Cu/(Zn + Sn) ratio of 0.8 was initially used. The absorber led to a photovoltaic cell efficiency of ~1.04% with a short circuit current of ~21.9 mA/ cm2. Sequential sulfurization of the selenized films resulted in completely- transformed Cu2ZnSn(S,Se)4 phase with a minor secondary phase of Cu2S. Cell performance was not improved after sulfurization primarily due to poor microstructural features that became worse with increasing the Cu/(Zn + Sn) ratio.

AB - Cu2ZnSnSe4 and Cu2ZnSn(S,Se)4 absorber films processed from co-evaporated Cu-Zn-Sn precursor films by post selenization and sequential sulfurization were investigated by varying Cu/(Zn + Sn) ratio and selenization/ sufurization temperatures. Structural, electrical and optical properties were largely dependent on the experimental parameters. The selenization process of the Cu-Zn-Sn precursors was successful in producing Cu2ZnSnSe4 phase with dense microstructure when the Cu/(Zn + Sn) ratio of 0.8 was initially used. The absorber led to a photovoltaic cell efficiency of ~1.04% with a short circuit current of ~21.9 mA/ cm2. Sequential sulfurization of the selenized films resulted in completely- transformed Cu2ZnSn(S,Se)4 phase with a minor secondary phase of Cu2S. Cell performance was not improved after sulfurization primarily due to poor microstructural features that became worse with increasing the Cu/(Zn + Sn) ratio.

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