Characteristics of diodes prepared using epitaxial CoSi2 as a boron diffusion source

Gi Bum Kim, Joon Seop Kwak, Hong Koo Baik, Sung Man Lee

Research output: Contribution to journalArticlepeer-review


The silicide-as-a-doping-source (SADS) process was used to manufacture a low leakage, shallow p+n junction. The SADS process uses epitaxial CoSi2 films formed by the Co/Ti/Si system. The film exhibited very low reverse leakage current density when the silicide formation temperature was at 800 °C. The reverse leakage current density increased significantly when the temperature was increased to 900 °C.

Original languageEnglish
Pages (from-to)2576-2578
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number5
Publication statusPublished - 2000 Sep

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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