The silicide-as-a-doping-source (SADS) process was used to manufacture a low leakage, shallow p+n junction. The SADS process uses epitaxial CoSi2 films formed by the Co/Ti/Si system. The film exhibited very low reverse leakage current density when the silicide formation temperature was at 800 °C. The reverse leakage current density increased significantly when the temperature was increased to 900 °C.
|Number of pages||3|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2000 Sep 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering