Characteristics of diodes prepared using epitaxial CoSi2 as a boron diffusion source

Gi Bum Kim, Joon Seop Kwak, Hong Koo Baik, Sung Man Lee

Research output: Contribution to journalArticle

Abstract

The silicide-as-a-doping-source (SADS) process was used to manufacture a low leakage, shallow p+n junction. The SADS process uses epitaxial CoSi2 films formed by the Co/Ti/Si system. The film exhibited very low reverse leakage current density when the silicide formation temperature was at 800 °C. The reverse leakage current density increased significantly when the temperature was increased to 900 °C.

Original languageEnglish
Pages (from-to)2576-2578
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number5
DOIs
Publication statusPublished - 2000 Sep 1

Fingerprint

Leakage currents
Boron
Diodes
boron
leakage
Current density
diodes
Doping (additives)
Epitaxial films
current density
p-n junctions
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

@article{01cc7ed0943649e1b3bc53892eeef93b,
title = "Characteristics of diodes prepared using epitaxial CoSi2 as a boron diffusion source",
abstract = "The silicide-as-a-doping-source (SADS) process was used to manufacture a low leakage, shallow p+n junction. The SADS process uses epitaxial CoSi2 films formed by the Co/Ti/Si system. The film exhibited very low reverse leakage current density when the silicide formation temperature was at 800 °C. The reverse leakage current density increased significantly when the temperature was increased to 900 °C.",
author = "Kim, {Gi Bum} and Kwak, {Joon Seop} and Baik, {Hong Koo} and Lee, {Sung Man}",
year = "2000",
month = "9",
day = "1",
doi = "10.1116/1.1288204",
language = "English",
volume = "18",
pages = "2576--2578",
journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",
issn = "1071-1023",
number = "5",

}

Characteristics of diodes prepared using epitaxial CoSi2 as a boron diffusion source. / Kim, Gi Bum; Kwak, Joon Seop; Baik, Hong Koo; Lee, Sung Man.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 5, 01.09.2000, p. 2576-2578.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Characteristics of diodes prepared using epitaxial CoSi2 as a boron diffusion source

AU - Kim, Gi Bum

AU - Kwak, Joon Seop

AU - Baik, Hong Koo

AU - Lee, Sung Man

PY - 2000/9/1

Y1 - 2000/9/1

N2 - The silicide-as-a-doping-source (SADS) process was used to manufacture a low leakage, shallow p+n junction. The SADS process uses epitaxial CoSi2 films formed by the Co/Ti/Si system. The film exhibited very low reverse leakage current density when the silicide formation temperature was at 800 °C. The reverse leakage current density increased significantly when the temperature was increased to 900 °C.

AB - The silicide-as-a-doping-source (SADS) process was used to manufacture a low leakage, shallow p+n junction. The SADS process uses epitaxial CoSi2 films formed by the Co/Ti/Si system. The film exhibited very low reverse leakage current density when the silicide formation temperature was at 800 °C. The reverse leakage current density increased significantly when the temperature was increased to 900 °C.

UR - http://www.scopus.com/inward/record.url?scp=0034264858&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034264858&partnerID=8YFLogxK

U2 - 10.1116/1.1288204

DO - 10.1116/1.1288204

M3 - Article

AN - SCOPUS:0034264858

VL - 18

SP - 2576

EP - 2578

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 5

ER -