Characteristics of double-gate gainzno thin-film transistor

Kyoung Seok Son, Ji Sim Jung, Kwang Hee Lee, Tae Sang Kim, Joon Seok Park, Yun Hyuk Choi, Keechan Park, Jang Yeon Kwon, Bonwon Koo, Sang Yoon Lee

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

A GaInZnO thin-film transistor with double-gate structure is reported. Enhancement-mode operation that is essential to the constitution of a low-power digital circuitry is easily achieved when the upper and lower gate electrodes are tied together. The saturation mobility and the subthreshold swing are improved from 3.65 cm2/(V s) and 0.44 V/dec to 18.9 cm2/(V s) and 0.14 V/dec, respectively, compared with the single-gate structure. We can modulate the threshold voltage of either gate by adjusting the bias on the other gate.

Original languageEnglish
Article number5406126
Pages (from-to)219-221
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number3
DOIs
Publication statusPublished - 2010 Mar 1

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Gates (transistor)
Thin film transistors
Threshold voltage
Electrodes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Son, K. S., Jung, J. S., Lee, K. H., Kim, T. S., Park, J. S., Choi, Y. H., ... Lee, S. Y. (2010). Characteristics of double-gate gainzno thin-film transistor. IEEE Electron Device Letters, 31(3), 219-221. [5406126]. https://doi.org/10.1109/LED.2009.2038805
Son, Kyoung Seok ; Jung, Ji Sim ; Lee, Kwang Hee ; Kim, Tae Sang ; Park, Joon Seok ; Choi, Yun Hyuk ; Park, Keechan ; Kwon, Jang Yeon ; Koo, Bonwon ; Lee, Sang Yoon. / Characteristics of double-gate gainzno thin-film transistor. In: IEEE Electron Device Letters. 2010 ; Vol. 31, No. 3. pp. 219-221.
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Son, KS, Jung, JS, Lee, KH, Kim, TS, Park, JS, Choi, YH, Park, K, Kwon, JY, Koo, B & Lee, SY 2010, 'Characteristics of double-gate gainzno thin-film transistor', IEEE Electron Device Letters, vol. 31, no. 3, 5406126, pp. 219-221. https://doi.org/10.1109/LED.2009.2038805

Characteristics of double-gate gainzno thin-film transistor. / Son, Kyoung Seok; Jung, Ji Sim; Lee, Kwang Hee; Kim, Tae Sang; Park, Joon Seok; Choi, Yun Hyuk; Park, Keechan; Kwon, Jang Yeon; Koo, Bonwon; Lee, Sang Yoon.

In: IEEE Electron Device Letters, Vol. 31, No. 3, 5406126, 01.03.2010, p. 219-221.

Research output: Contribution to journalArticle

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Son KS, Jung JS, Lee KH, Kim TS, Park JS, Choi YH et al. Characteristics of double-gate gainzno thin-film transistor. IEEE Electron Device Letters. 2010 Mar 1;31(3):219-221. 5406126. https://doi.org/10.1109/LED.2009.2038805