Characteristics of double-gate gainzno thin-film transistor

Kyoung Seok Son, Ji Sim Jung, Kwang Hee Lee, Tae Sang Kim, Joon Seok Park, Yun Hyuk Choi, Keechan Park, Jang Yeon Kwon, Bonwon Koo, Sang Yoon Lee

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Abstract

A GaInZnO thin-film transistor with double-gate structure is reported. Enhancement-mode operation that is essential to the constitution of a low-power digital circuitry is easily achieved when the upper and lower gate electrodes are tied together. The saturation mobility and the subthreshold swing are improved from 3.65 cm2/(V s) and 0.44 V/dec to 18.9 cm2/(V s) and 0.14 V/dec, respectively, compared with the single-gate structure. We can modulate the threshold voltage of either gate by adjusting the bias on the other gate.

Original languageEnglish
Article number5406126
Pages (from-to)219-221
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number3
DOIs
Publication statusPublished - 2010 Mar

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Son, K. S., Jung, J. S., Lee, K. H., Kim, T. S., Park, J. S., Choi, Y. H., Park, K., Kwon, J. Y., Koo, B., & Lee, S. Y. (2010). Characteristics of double-gate gainzno thin-film transistor. IEEE Electron Device Letters, 31(3), 219-221. [5406126]. https://doi.org/10.1109/LED.2009.2038805