Characteristics of ferroelectric gate transistor using Nd 2Ti2O7/HfO2/Si structures

Woo Sik Kim, Chang K. Lee, Jun Kyu Yang, Hyung-Ho Park

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report the fabrication and characterization of ferroelectric-gate field-effect transistor using a Nd2Ti2O 7(NTO)/HfO2/Si structure. NTO and HfO2 films were formed by chemical solution deposition and DC magnetron sputtering method, respectively. The crystalline properties of the films were characterized by X-ray diffraction. The memory windows were in the range of 0.59 V to 1.55 V when the applied voltage varied from 2 V to 6 V. The capacitance decreased by 15% after retention time of 5000 s at ±5 writing pulse voltages. The relationship between electrical characteristics and interfacial properties were discussed.

Original languageEnglish
Pages (from-to)269-276
Number of pages8
JournalIntegrated Ferroelectrics
Volume64
DOIs
Publication statusPublished - 2004 Dec 1

Fingerprint

Ferroelectric materials
Transistors
transistors
Gates (transistor)
Electric potential
electric potential
Magnetron sputtering
magnetron sputtering
Capacitance
field effect transistors
capacitance
direct current
Crystalline materials
Data storage equipment
Fabrication
X ray diffraction
fabrication
pulses
diffraction
x rays

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kim, Woo Sik ; Lee, Chang K. ; Yang, Jun Kyu ; Park, Hyung-Ho. / Characteristics of ferroelectric gate transistor using Nd 2Ti2O7/HfO2/Si structures. In: Integrated Ferroelectrics. 2004 ; Vol. 64. pp. 269-276.
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Characteristics of ferroelectric gate transistor using Nd 2Ti2O7/HfO2/Si structures. / Kim, Woo Sik; Lee, Chang K.; Yang, Jun Kyu; Park, Hyung-Ho.

In: Integrated Ferroelectrics, Vol. 64, 01.12.2004, p. 269-276.

Research output: Contribution to journalArticle

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