We report the fabrication and characterization of ferroelectric-gate field-effect transistor using a Nd2Ti2O 7(NTO)/HfO2/Si structure. NTO and HfO2 films were formed by chemical solution deposition and DC magnetron sputtering method, respectively. The crystalline properties of the films were characterized by X-ray diffraction. The memory windows were in the range of 0.59 V to 1.55 V when the applied voltage varied from 2 V to 6 V. The capacitance decreased by 15% after retention time of 5000 s at ±5 writing pulse voltages. The relationship between electrical characteristics and interfacial properties were discussed.
Bibliographical noteFunding Information:
This work was supported by Korea Research Foundation Grant (KRF-2003-041-D00375).
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Control and Systems Engineering
- Ceramics and Composites
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry