The chemical and electrical characteristics of HfO2 dielectric layers grown on the p-type Si substrate by the metalorganic molecular beam epitaxy (MOMBE) technique were investigated. The XPS spectra showed that the Hf 4f and O 1s peaks shifted to the higher level of binding energy due to the charge 1transfer effect. Electrical properties were analyzed by C-V and I-V measurements. The distortion of C-V curve at depletion region is attributed to the effect of deep trap levels' existence. Saturation capacitance and leakage current density were in the range of 207-249 pF and 0.52-0.58 A/cm2 respectively, and the flat band voltage shift to the higher voltage appeared as the oxygen flow rate increased.
|Number of pages||4|
|Journal||Materials Science Forum|
|Publication status||Published - 2004 Jul 26|
All Science Journal Classification (ASJC) codes
- Materials Science(all)