Characteristics of HfO2 dielectric layer grown by MOMBE

J. H. Hong, J. M. Myoung

Research output: Contribution to journalConference article

Abstract

The chemical and electrical characteristics of HfO2 dielectric layers grown on the p-type Si substrate by the metalorganic molecular beam epitaxy (MOMBE) technique were investigated. The XPS spectra showed that the Hf 4f and O 1s peaks shifted to the higher level of binding energy due to the charge 1transfer effect. Electrical properties were analyzed by C-V and I-V measurements. The distortion of C-V curve at depletion region is attributed to the effect of deep trap levels' existence. Saturation capacitance and leakage current density were in the range of 207-249 pF and 0.52-0.58 A/cm2 respectively, and the flat band voltage shift to the higher voltage appeared as the oxygen flow rate increased.

Original languageEnglish
Pages (from-to)1005-1008
Number of pages4
JournalMaterials Science Forum
Volume449-452
Issue numberII
Publication statusPublished - 2004 Jul 26

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Molecular beam epitaxy
molecular beam epitaxy
Electric potential
Binding energy
Leakage currents
high voltages
depletion
Electric properties
leakage
Capacitance
Current density
X ray photoelectron spectroscopy
flow velocity
binding energy
capacitance
electrical properties
Flow rate
traps
current density
Oxygen

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Hong, J. H. ; Myoung, J. M. / Characteristics of HfO2 dielectric layer grown by MOMBE. In: Materials Science Forum. 2004 ; Vol. 449-452, No. II. pp. 1005-1008.
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Characteristics of HfO2 dielectric layer grown by MOMBE. / Hong, J. H.; Myoung, J. M.

In: Materials Science Forum, Vol. 449-452, No. II, 26.07.2004, p. 1005-1008.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Characteristics of HfO2 dielectric layer grown by MOMBE

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AU - Myoung, J. M.

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