Characteristics of HfO2 - Al2O3 laminate films containing incorporated N as a function of stack structure and annealing temperature

Mann-Ho Cho, K. B. Chung, C. N. Whang, Dae Hong Ko, H. S. Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The properties of Al2 O3 -Hf O2 laminated films with incorporated N were investigated as a function of stack structure and annealing temperature by high-resolution x-ray photoelectron spectroscopy, and medium energy ion scattering (MEIS). The MEIS results indicate that the diffusion of Si from the Si substrate into film increased in the case where a film with a buffer layer of Al2 O3 was present during the annealing at temperatures up to 800 °C, while it led to a relative suppression in a film with a Hf O2 buffer layer. The incorporation of N was gradually increased in the film with a buffer layer of Al2 O3 on Si with annealing temperature, while the increase was abrupt in the film with a buffer layer of Hf O2 on Si at an annealing temperature of 900 °C. The N incorporated into the film was very unstable, resulting in out diffusion from the film after an additional annealing treatment.

Original languageEnglish
Article number262906
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number26
DOIs
Publication statusPublished - 2005 Dec 1

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laminates
annealing
buffers
temperature
ion scattering
x ray spectroscopy
retarding
photoelectron spectroscopy
energy
high resolution

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Characteristics of HfO2 - Al2O3 laminate films containing incorporated N as a function of stack structure and annealing temperature",
abstract = "The properties of Al2 O3 -Hf O2 laminated films with incorporated N were investigated as a function of stack structure and annealing temperature by high-resolution x-ray photoelectron spectroscopy, and medium energy ion scattering (MEIS). The MEIS results indicate that the diffusion of Si from the Si substrate into film increased in the case where a film with a buffer layer of Al2 O3 was present during the annealing at temperatures up to 800 °C, while it led to a relative suppression in a film with a Hf O2 buffer layer. The incorporation of N was gradually increased in the film with a buffer layer of Al2 O3 on Si with annealing temperature, while the increase was abrupt in the film with a buffer layer of Hf O2 on Si at an annealing temperature of 900 °C. The N incorporated into the film was very unstable, resulting in out diffusion from the film after an additional annealing treatment.",
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Characteristics of HfO2 - Al2O3 laminate films containing incorporated N as a function of stack structure and annealing temperature. / Cho, Mann-Ho; Chung, K. B.; Whang, C. N.; Ko, Dae Hong; Kim, H. S.

In: Applied Physics Letters, Vol. 87, No. 26, 262906, 01.12.2005, p. 1-3.

Research output: Contribution to journalArticle

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AU - Ko, Dae Hong

AU - Kim, H. S.

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AB - The properties of Al2 O3 -Hf O2 laminated films with incorporated N were investigated as a function of stack structure and annealing temperature by high-resolution x-ray photoelectron spectroscopy, and medium energy ion scattering (MEIS). The MEIS results indicate that the diffusion of Si from the Si substrate into film increased in the case where a film with a buffer layer of Al2 O3 was present during the annealing at temperatures up to 800 °C, while it led to a relative suppression in a film with a Hf O2 buffer layer. The incorporation of N was gradually increased in the film with a buffer layer of Al2 O3 on Si with annealing temperature, while the increase was abrupt in the film with a buffer layer of Hf O2 on Si at an annealing temperature of 900 °C. The N incorporated into the film was very unstable, resulting in out diffusion from the film after an additional annealing treatment.

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