Gd2O3 films are electron beam (e-beam) evaporated on GaAs at room temperature. The bonding natures of the Gd2O3/GaAs interface are characterized using Auger electron spectroscopy and X-ray photoelectron spectroscopy. LMM Auger lines clearly demonstrate the oxide-related chemical state. After the deposition of Gd2O3 on S-passivated GaAs, GaAs oxides were not formed at the interface but the generation of interfacial excess As is observed. The generation of elemental excess As can be explained by the dissociation of As-S bonds. However, interfacial modification could be minimized through in situ thermal hydrogenation of S-passivated GaAs before Gd2O3 deposition. The high-frequency capacitance-voltage (C-V) measurements showed an effective decrease of the interface state. The characteristics of deposition-induced interfacial modification and bonding distribution in Gd2O3/GaAs interface are discussed.
|Number of pages||7|
|Publication status||Published - 2002 Sep 2|
|Event||2nd International Seminar On Semiconductor Surface Passivation (SSP'2001) - Ustron, Poland|
Duration: 2001 Sep 10 → 2001 Sep 13
Bibliographical noteFunding Information:
The authors wish to acknowledge the financial support of the Korea Research Foundation made in the program year of 2000 and Brain Korea 21 project.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces, Coatings and Films