Characteristics of interfacial bonding distribution of Gd2O3-GaAs structure

Jun Kyu Yang; Min Gu Kang; Hyung Ho Park

doi:10.1016/S0042-207X(02)00187-2

Characteristics of interfacial bonding distribution of Gd₂O₃-GaAs structure

Jun Kyu Yang, Min Gu Kang, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

8 Citations (Scopus)

Abstract

Gd₂O₃ films are electron beam (e-beam) evaporated on GaAs at room temperature. The bonding natures of the Gd₂O₃/GaAs interface are characterized using Auger electron spectroscopy and X-ray photoelectron spectroscopy. LMM Auger lines clearly demonstrate the oxide-related chemical state. After the deposition of Gd₂O₃ on S-passivated GaAs, GaAs oxides were not formed at the interface but the generation of interfacial excess As is observed. The generation of elemental excess As can be explained by the dissociation of As-S bonds. However, interfacial modification could be minimized through in situ thermal hydrogenation of S-passivated GaAs before Gd₂O₃ deposition. The high-frequency capacitance-voltage (C-V) measurements showed an effective decrease of the interface state. The characteristics of deposition-induced interfacial modification and bonding distribution in Gd₂O₃/GaAs interface are discussed.

Original language	English
Pages (from-to)	161-167
Number of pages	7
Journal	Vacuum
Volume	67
Issue number	1
DOIs	https://doi.org/10.1016/S0042-207X(02)00187-2
Publication status	Published - 2002 Sept 2
Event	2nd International Seminar On Semiconductor Surface Passivation (SSP'2001) - Ustron, Poland Duration: 2001 Sept 10 → 2001 Sept 13

Bibliographical note

Funding Information:
The authors wish to acknowledge the financial support of the Korea Research Foundation made in the program year of 2000 and Brain Korea 21 project.

All Science Journal Classification (ASJC) codes

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

Access to Document

10.1016/S0042-207X(02)00187-2

Cite this

@article{2d002278d0d742c8a3fae3c2ee660d28,

title = "Characteristics of interfacial bonding distribution of Gd2O3-GaAs structure",

abstract = "Gd2O3 films are electron beam (e-beam) evaporated on GaAs at room temperature. The bonding natures of the Gd2O3/GaAs interface are characterized using Auger electron spectroscopy and X-ray photoelectron spectroscopy. LMM Auger lines clearly demonstrate the oxide-related chemical state. After the deposition of Gd2O3 on S-passivated GaAs, GaAs oxides were not formed at the interface but the generation of interfacial excess As is observed. The generation of elemental excess As can be explained by the dissociation of As-S bonds. However, interfacial modification could be minimized through in situ thermal hydrogenation of S-passivated GaAs before Gd2O3 deposition. The high-frequency capacitance-voltage (C-V) measurements showed an effective decrease of the interface state. The characteristics of deposition-induced interfacial modification and bonding distribution in Gd2O3/GaAs interface are discussed.",

author = "Yang, {Jun Kyu} and Kang, {Min Gu} and Park, {Hyung Ho}",

note = "Funding Information: The authors wish to acknowledge the financial support of the Korea Research Foundation made in the program year of 2000 and Brain Korea 21 project. ; 2nd International Seminar On Semiconductor Surface Passivation (SSP'2001) ; Conference date: 10-09-2001 Through 13-09-2001",

year = "2002",

month = sep,

day = "2",

doi = "10.1016/S0042-207X(02)00187-2",

language = "English",

volume = "67",

pages = "161--167",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Limited",

number = "1",

}

TY - JOUR

T1 - Characteristics of interfacial bonding distribution of Gd2O3-GaAs structure

AU - Yang, Jun Kyu

AU - Kang, Min Gu

AU - Park, Hyung Ho

N1 - Funding Information: The authors wish to acknowledge the financial support of the Korea Research Foundation made in the program year of 2000 and Brain Korea 21 project.

PY - 2002/9/2

Y1 - 2002/9/2

N2 - Gd2O3 films are electron beam (e-beam) evaporated on GaAs at room temperature. The bonding natures of the Gd2O3/GaAs interface are characterized using Auger electron spectroscopy and X-ray photoelectron spectroscopy. LMM Auger lines clearly demonstrate the oxide-related chemical state. After the deposition of Gd2O3 on S-passivated GaAs, GaAs oxides were not formed at the interface but the generation of interfacial excess As is observed. The generation of elemental excess As can be explained by the dissociation of As-S bonds. However, interfacial modification could be minimized through in situ thermal hydrogenation of S-passivated GaAs before Gd2O3 deposition. The high-frequency capacitance-voltage (C-V) measurements showed an effective decrease of the interface state. The characteristics of deposition-induced interfacial modification and bonding distribution in Gd2O3/GaAs interface are discussed.

AB - Gd2O3 films are electron beam (e-beam) evaporated on GaAs at room temperature. The bonding natures of the Gd2O3/GaAs interface are characterized using Auger electron spectroscopy and X-ray photoelectron spectroscopy. LMM Auger lines clearly demonstrate the oxide-related chemical state. After the deposition of Gd2O3 on S-passivated GaAs, GaAs oxides were not formed at the interface but the generation of interfacial excess As is observed. The generation of elemental excess As can be explained by the dissociation of As-S bonds. However, interfacial modification could be minimized through in situ thermal hydrogenation of S-passivated GaAs before Gd2O3 deposition. The high-frequency capacitance-voltage (C-V) measurements showed an effective decrease of the interface state. The characteristics of deposition-induced interfacial modification and bonding distribution in Gd2O3/GaAs interface are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0037009192&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037009192&partnerID=8YFLogxK

U2 - 10.1016/S0042-207X(02)00187-2

DO - 10.1016/S0042-207X(02)00187-2

M3 - Conference article

AN - SCOPUS:0037009192

SN - 0042-207X

VL - 67

SP - 161

EP - 167

JO - Vacuum

JF - Vacuum

IS - 1

T2 - 2nd International Seminar On Semiconductor Surface Passivation (SSP'2001)

Y2 - 10 September 2001 through 13 September 2001

ER -