Characteristics of interfacial bonding distribution of Gd2O3-GaAs structure

Jun Kyu Yang, Min Gu Kang, Hyung-Ho Park

Research output: Contribution to journalConference article

8 Citations (Scopus)

Abstract

Gd2O3 films are electron beam (e-beam) evaporated on GaAs at room temperature. The bonding natures of the Gd2O3/GaAs interface are characterized using Auger electron spectroscopy and X-ray photoelectron spectroscopy. LMM Auger lines clearly demonstrate the oxide-related chemical state. After the deposition of Gd2O3 on S-passivated GaAs, GaAs oxides were not formed at the interface but the generation of interfacial excess As is observed. The generation of elemental excess As can be explained by the dissociation of As-S bonds. However, interfacial modification could be minimized through in situ thermal hydrogenation of S-passivated GaAs before Gd2O3 deposition. The high-frequency capacitance-voltage (C-V) measurements showed an effective decrease of the interface state. The characteristics of deposition-induced interfacial modification and bonding distribution in Gd2O3/GaAs interface are discussed.

Original languageEnglish
Pages (from-to)161-167
Number of pages7
JournalVacuum
Volume67
Issue number1
DOIs
Publication statusPublished - 2002 Sep 2
Event2nd International Seminar On Semiconductor Surface Passivation (SSP'2001) - Ustron, Poland
Duration: 2001 Sep 102001 Sep 13

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Oxides
Capacitance measurement
Interface states
Voltage measurement
Auger electron spectroscopy
Hydrogenation
oxides
Electron beams
X ray photoelectron spectroscopy
electrical measurement
Auger spectroscopy
hydrogenation
electron spectroscopy
capacitance
photoelectron spectroscopy
dissociation
electron beams
gallium arsenide
room temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

Cite this

Yang, Jun Kyu ; Kang, Min Gu ; Park, Hyung-Ho. / Characteristics of interfacial bonding distribution of Gd2O3-GaAs structure. In: Vacuum. 2002 ; Vol. 67, No. 1. pp. 161-167.
@article{2d002278d0d742c8a3fae3c2ee660d28,
title = "Characteristics of interfacial bonding distribution of Gd2O3-GaAs structure",
abstract = "Gd2O3 films are electron beam (e-beam) evaporated on GaAs at room temperature. The bonding natures of the Gd2O3/GaAs interface are characterized using Auger electron spectroscopy and X-ray photoelectron spectroscopy. LMM Auger lines clearly demonstrate the oxide-related chemical state. After the deposition of Gd2O3 on S-passivated GaAs, GaAs oxides were not formed at the interface but the generation of interfacial excess As is observed. The generation of elemental excess As can be explained by the dissociation of As-S bonds. However, interfacial modification could be minimized through in situ thermal hydrogenation of S-passivated GaAs before Gd2O3 deposition. The high-frequency capacitance-voltage (C-V) measurements showed an effective decrease of the interface state. The characteristics of deposition-induced interfacial modification and bonding distribution in Gd2O3/GaAs interface are discussed.",
author = "Yang, {Jun Kyu} and Kang, {Min Gu} and Hyung-Ho Park",
year = "2002",
month = "9",
day = "2",
doi = "10.1016/S0042-207X(02)00187-2",
language = "English",
volume = "67",
pages = "161--167",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Limited",
number = "1",

}

Characteristics of interfacial bonding distribution of Gd2O3-GaAs structure. / Yang, Jun Kyu; Kang, Min Gu; Park, Hyung-Ho.

In: Vacuum, Vol. 67, No. 1, 02.09.2002, p. 161-167.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Characteristics of interfacial bonding distribution of Gd2O3-GaAs structure

AU - Yang, Jun Kyu

AU - Kang, Min Gu

AU - Park, Hyung-Ho

PY - 2002/9/2

Y1 - 2002/9/2

N2 - Gd2O3 films are electron beam (e-beam) evaporated on GaAs at room temperature. The bonding natures of the Gd2O3/GaAs interface are characterized using Auger electron spectroscopy and X-ray photoelectron spectroscopy. LMM Auger lines clearly demonstrate the oxide-related chemical state. After the deposition of Gd2O3 on S-passivated GaAs, GaAs oxides were not formed at the interface but the generation of interfacial excess As is observed. The generation of elemental excess As can be explained by the dissociation of As-S bonds. However, interfacial modification could be minimized through in situ thermal hydrogenation of S-passivated GaAs before Gd2O3 deposition. The high-frequency capacitance-voltage (C-V) measurements showed an effective decrease of the interface state. The characteristics of deposition-induced interfacial modification and bonding distribution in Gd2O3/GaAs interface are discussed.

AB - Gd2O3 films are electron beam (e-beam) evaporated on GaAs at room temperature. The bonding natures of the Gd2O3/GaAs interface are characterized using Auger electron spectroscopy and X-ray photoelectron spectroscopy. LMM Auger lines clearly demonstrate the oxide-related chemical state. After the deposition of Gd2O3 on S-passivated GaAs, GaAs oxides were not formed at the interface but the generation of interfacial excess As is observed. The generation of elemental excess As can be explained by the dissociation of As-S bonds. However, interfacial modification could be minimized through in situ thermal hydrogenation of S-passivated GaAs before Gd2O3 deposition. The high-frequency capacitance-voltage (C-V) measurements showed an effective decrease of the interface state. The characteristics of deposition-induced interfacial modification and bonding distribution in Gd2O3/GaAs interface are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0037009192&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037009192&partnerID=8YFLogxK

U2 - 10.1016/S0042-207X(02)00187-2

DO - 10.1016/S0042-207X(02)00187-2

M3 - Conference article

AN - SCOPUS:0037009192

VL - 67

SP - 161

EP - 167

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 1

ER -