Characteristics of interfacial strains developed in silicon by wet O2 oxidation

D. W. Shin, Y. H. You, Doo Jin Choi, G. H. Kim

Research output: Contribution to journalArticle

Abstract

The interfacial strains that developed in silicon wafer during wet oxidation were studied using convergent electron beam diffraction (CBED) analysis. For the observation of the stacking faults at the Si/SiO2 interface, the oxide layer was removed by hydrofluoric acid and the silicon surface was etched. The lattice strain was tensile at the interface and diminished sharply towards zero at about 1.5 μm from the Si/SiO2 interfaces. Tensile thermal strain was observed at the interface because the thermal expansion coefficient of silicon is five times larger than that of SiO2.

Original languageEnglish
Pages (from-to)755-757
Number of pages3
JournalJournal of Materials Science Letters
Volume18
Issue number10
DOIs
Publication statusPublished - 1999 Jan 1

Fingerprint

Silicon
Hydrofluoric Acid
Oxidation
Hydrofluoric acid
Tensile strain
Stacking faults
Silicon wafers
Oxides
Thermal expansion
Electron beams
Diffraction
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

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Characteristics of interfacial strains developed in silicon by wet O2 oxidation. / Shin, D. W.; You, Y. H.; Choi, Doo Jin; Kim, G. H.

In: Journal of Materials Science Letters, Vol. 18, No. 10, 01.01.1999, p. 755-757.

Research output: Contribution to journalArticle

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