Characteristics of ITO films with oxygen plasma treatment for thin film solar cell applications

Yong Seob Park; Eungkwon Kim; Byungyou Hong; Jaehyoeng Lee

doi:10.1016/j.materresbull.2013.07.026

Characteristics of ITO films with oxygen plasma treatment for thin film solar cell applications

Yong Seob Park, Eungkwon Kim, Byungyou Hong, Jaehyoeng Lee

Department of Ophthalmology

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

The influence of oxygen plasma treatment on the electro-optical and structural properties of indium-tin-oxide films deposited by radio frequency magnetron sputtering method were investigated. The films were exposed at different O₂ plasma powers and for various durations by using the plasma enhanced chemical vapor deposition (PECVD) system. The resistivity of the ITO films was almost constant, regardless of the plasma treatment conditions. Although the optical transmittance of ITO films was little changed by the plasma power, the prolonged treatment slightly increased the transmittance. The work function of ITO film was changed from 4.67 eV to 5.66 eV at the plasma treatment conditions of 300 W and 60 min.

Original language	English
Pages (from-to)	5115-5120
Number of pages	6
Journal	Materials Research Bulletin
Volume	48
Issue number	12
DOIs	https://doi.org/10.1016/j.materresbull.2013.07.026
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.materresbull.2013.07.026

Cite this

@article{f5192a9f296548969aa395f47620963b,

title = "Characteristics of ITO films with oxygen plasma treatment for thin film solar cell applications",

abstract = "The influence of oxygen plasma treatment on the electro-optical and structural properties of indium-tin-oxide films deposited by radio frequency magnetron sputtering method were investigated. The films were exposed at different O2 plasma powers and for various durations by using the plasma enhanced chemical vapor deposition (PECVD) system. The resistivity of the ITO films was almost constant, regardless of the plasma treatment conditions. Although the optical transmittance of ITO films was little changed by the plasma power, the prolonged treatment slightly increased the transmittance. The work function of ITO film was changed from 4.67 eV to 5.66 eV at the plasma treatment conditions of 300 W and 60 min.",

author = "Park, {Yong Seob} and Eungkwon Kim and Byungyou Hong and Jaehyoeng Lee",

year = "2013",

doi = "10.1016/j.materresbull.2013.07.026",

language = "English",

volume = "48",

pages = "5115--5120",

journal = "Materials Research Bulletin",

issn = "0025-5408",

publisher = "Elsevier Limited",

number = "12",

}

TY - JOUR

T1 - Characteristics of ITO films with oxygen plasma treatment for thin film solar cell applications

AU - Park, Yong Seob

AU - Kim, Eungkwon

AU - Hong, Byungyou

AU - Lee, Jaehyoeng

PY - 2013

Y1 - 2013

N2 - The influence of oxygen plasma treatment on the electro-optical and structural properties of indium-tin-oxide films deposited by radio frequency magnetron sputtering method were investigated. The films were exposed at different O2 plasma powers and for various durations by using the plasma enhanced chemical vapor deposition (PECVD) system. The resistivity of the ITO films was almost constant, regardless of the plasma treatment conditions. Although the optical transmittance of ITO films was little changed by the plasma power, the prolonged treatment slightly increased the transmittance. The work function of ITO film was changed from 4.67 eV to 5.66 eV at the plasma treatment conditions of 300 W and 60 min.

AB - The influence of oxygen plasma treatment on the electro-optical and structural properties of indium-tin-oxide films deposited by radio frequency magnetron sputtering method were investigated. The films were exposed at different O2 plasma powers and for various durations by using the plasma enhanced chemical vapor deposition (PECVD) system. The resistivity of the ITO films was almost constant, regardless of the plasma treatment conditions. Although the optical transmittance of ITO films was little changed by the plasma power, the prolonged treatment slightly increased the transmittance. The work function of ITO film was changed from 4.67 eV to 5.66 eV at the plasma treatment conditions of 300 W and 60 min.

UR - http://www.scopus.com/inward/record.url?scp=84885954815&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885954815&partnerID=8YFLogxK

U2 - 10.1016/j.materresbull.2013.07.026

DO - 10.1016/j.materresbull.2013.07.026

M3 - Article

AN - SCOPUS:84885954815

SN - 0025-5408

VL - 48

SP - 5115

EP - 5120

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 12

ER -

Characteristics of ITO films with oxygen plasma treatment for thin film solar cell applications

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this