Characteristics of junctionless charge trap flash memory for 3D stacked NAND flash

Jinho Oh; Heedo Na; Sunghoon Park; Hyunchul Sohn

doi:10.1166/jnn.2013.7625

Characteristics of junctionless charge trap flash memory for 3D stacked NAND flash

Jinho Oh, Heedo Na, Sunghoon Park, Hyunchul Sohn

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The electrical characteristics of tunnel barrier engineered-charge trap flash (TBE-CTF) memory devices with junctionless (JL) source and drain (S/D) were investigated. The JL structure is composed of an n⁺-poly-Si based ultra-thin channel and S/D with identical doping concentrations. The band engineered Hf-silicate/Al₂O₃ tunnel barrier stack was applied to a JL-TBE-CTF memory device in order to enhance the field sensitivity. The Hf-silicate/Al₂O₃ tunnel barrier, HfO₂ trap layer, and Al₂O₃ blocking layer were deposited by atomic layer deposition. The fabricated device exhibited a large memory window of 9.43 V, as well as high programming and erasing speeds. Moreover, it also showed adequate retention times and endurance properties. Hence, the JL-TBE-CTF memory (which has a low process complexity) is expected to be an appropriate structure for 3D stacked ultra-high density memory applications.

Original language	English
Pages (from-to)	6413-6415
Number of pages	3
Journal	Journal of Nanoscience and Nanotechnology
Volume	13
Issue number	9
DOIs	https://doi.org/10.1166/jnn.2013.7625
Publication status	Published - 2013 Sep

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Biomedical Engineering
Materials Science(all)
Condensed Matter Physics

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title = "Characteristics of junctionless charge trap flash memory for 3D stacked NAND flash",

abstract = "The electrical characteristics of tunnel barrier engineered-charge trap flash (TBE-CTF) memory devices with junctionless (JL) source and drain (S/D) were investigated. The JL structure is composed of an n+-poly-Si based ultra-thin channel and S/D with identical doping concentrations. The band engineered Hf-silicate/Al2O3 tunnel barrier stack was applied to a JL-TBE-CTF memory device in order to enhance the field sensitivity. The Hf-silicate/Al2O3 tunnel barrier, HfO2 trap layer, and Al2O3 blocking layer were deposited by atomic layer deposition. The fabricated device exhibited a large memory window of 9.43 V, as well as high programming and erasing speeds. Moreover, it also showed adequate retention times and endurance properties. Hence, the JL-TBE-CTF memory (which has a low process complexity) is expected to be an appropriate structure for 3D stacked ultra-high density memory applications.",

author = "Jinho Oh and Heedo Na and Sunghoon Park and Hyunchul Sohn",

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AU - Na, Heedo

AU - Park, Sunghoon

AU - Sohn, Hyunchul

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N2 - The electrical characteristics of tunnel barrier engineered-charge trap flash (TBE-CTF) memory devices with junctionless (JL) source and drain (S/D) were investigated. The JL structure is composed of an n+-poly-Si based ultra-thin channel and S/D with identical doping concentrations. The band engineered Hf-silicate/Al2O3 tunnel barrier stack was applied to a JL-TBE-CTF memory device in order to enhance the field sensitivity. The Hf-silicate/Al2O3 tunnel barrier, HfO2 trap layer, and Al2O3 blocking layer were deposited by atomic layer deposition. The fabricated device exhibited a large memory window of 9.43 V, as well as high programming and erasing speeds. Moreover, it also showed adequate retention times and endurance properties. Hence, the JL-TBE-CTF memory (which has a low process complexity) is expected to be an appropriate structure for 3D stacked ultra-high density memory applications.

AB - The electrical characteristics of tunnel barrier engineered-charge trap flash (TBE-CTF) memory devices with junctionless (JL) source and drain (S/D) were investigated. The JL structure is composed of an n+-poly-Si based ultra-thin channel and S/D with identical doping concentrations. The band engineered Hf-silicate/Al2O3 tunnel barrier stack was applied to a JL-TBE-CTF memory device in order to enhance the field sensitivity. The Hf-silicate/Al2O3 tunnel barrier, HfO2 trap layer, and Al2O3 blocking layer were deposited by atomic layer deposition. The fabricated device exhibited a large memory window of 9.43 V, as well as high programming and erasing speeds. Moreover, it also showed adequate retention times and endurance properties. Hence, the JL-TBE-CTF memory (which has a low process complexity) is expected to be an appropriate structure for 3D stacked ultra-high density memory applications.

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Characteristics of junctionless charge trap flash memory for 3D stacked NAND flash

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