Characteristics of junctionless charge trap flash memory for 3D stacked NAND flash

Jinho Oh, Heedo Na, Sunghoon Park, Hyunchul Sohn

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The electrical characteristics of tunnel barrier engineered-charge trap flash (TBE-CTF) memory devices with junctionless (JL) source and drain (S/D) were investigated. The JL structure is composed of an n+-poly-Si based ultra-thin channel and S/D with identical doping concentrations. The band engineered Hf-silicate/Al2O3 tunnel barrier stack was applied to a JL-TBE-CTF memory device in order to enhance the field sensitivity. The Hf-silicate/Al2O3 tunnel barrier, HfO2 trap layer, and Al2O3 blocking layer were deposited by atomic layer deposition. The fabricated device exhibited a large memory window of 9.43 V, as well as high programming and erasing speeds. Moreover, it also showed adequate retention times and endurance properties. Hence, the JL-TBE-CTF memory (which has a low process complexity) is expected to be an appropriate structure for 3D stacked ultra-high density memory applications.

Original languageEnglish
Pages (from-to)6413-6415
Number of pages3
JournalJournal of Nanoscience and Nanotechnology
Volume13
Issue number9
DOIs
Publication statusPublished - 2013 Sep 1

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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