Abstract
The electrical characteristics of tunnel barrier engineered-charge trap flash (TBE-CTF) memory devices with junctionless (JL) source and drain (S/D) were investigated. The JL structure is composed of an n+-poly-Si based ultra-thin channel and S/D with identical doping concentrations. The band engineered Hf-silicate/Al2O3 tunnel barrier stack was applied to a JL-TBE-CTF memory device in order to enhance the field sensitivity. The Hf-silicate/Al2O3 tunnel barrier, HfO2 trap layer, and Al2O3 blocking layer were deposited by atomic layer deposition. The fabricated device exhibited a large memory window of 9.43 V, as well as high programming and erasing speeds. Moreover, it also showed adequate retention times and endurance properties. Hence, the JL-TBE-CTF memory (which has a low process complexity) is expected to be an appropriate structure for 3D stacked ultra-high density memory applications.
Original language | English |
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Pages (from-to) | 6413-6415 |
Number of pages | 3 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 13 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2013 Sep |
All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics