Characteristics of La2O3 thin films deposited using metal organic chemical vapor deposition with different oxidant gas

Hyo June Kim, Jin Hyung Jun, Doo Jin Choi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

La2O3 films were deposited using O3 and the structural and electrical properties were investigated and compared with those of La2O3 films deposited using O2. The deposition temperature of the La2O3 films using O3 was slightly reduced compared to that of the La2O3 films generated using O2. After a post-annealing process at 600 and 900 °C, the crystallinity of the La2O3 films using O3 were smaller than that using O2. The leakage current density increased after annealing at 600 °C due to densification and then decreased after annealing at 900 °C due to interfacial layer growth. The effective dielectric constant of the La2O3 films deposited using O3 decreased at 900 °C due to interfacial layer growth. The La2O3 films deposited using O3 showed better structural and electrical properties in this study.

Original languageEnglish
Pages (from-to)953-956
Number of pages4
JournalCeramics International
Volume34
Issue number4
DOIs
Publication statusPublished - 2008 May 1

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Organic Chemicals
Organic chemicals
Oxidants
Chemical vapor deposition
Gases
Metals
Thin films
Annealing
Structural properties
Electric properties
Densification
Leakage currents
Permittivity
Current density

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites

Cite this

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title = "Characteristics of La2O3 thin films deposited using metal organic chemical vapor deposition with different oxidant gas",
abstract = "La2O3 films were deposited using O3 and the structural and electrical properties were investigated and compared with those of La2O3 films deposited using O2. The deposition temperature of the La2O3 films using O3 was slightly reduced compared to that of the La2O3 films generated using O2. After a post-annealing process at 600 and 900 °C, the crystallinity of the La2O3 films using O3 were smaller than that using O2. The leakage current density increased after annealing at 600 °C due to densification and then decreased after annealing at 900 °C due to interfacial layer growth. The effective dielectric constant of the La2O3 films deposited using O3 decreased at 900 °C due to interfacial layer growth. The La2O3 films deposited using O3 showed better structural and electrical properties in this study.",
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Characteristics of La2O3 thin films deposited using metal organic chemical vapor deposition with different oxidant gas. / Kim, Hyo June; Jun, Jin Hyung; Choi, Doo Jin.

In: Ceramics International, Vol. 34, No. 4, 01.05.2008, p. 953-956.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Kim, Hyo June

AU - Jun, Jin Hyung

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AB - La2O3 films were deposited using O3 and the structural and electrical properties were investigated and compared with those of La2O3 films deposited using O2. The deposition temperature of the La2O3 films using O3 was slightly reduced compared to that of the La2O3 films generated using O2. After a post-annealing process at 600 and 900 °C, the crystallinity of the La2O3 films using O3 were smaller than that using O2. The leakage current density increased after annealing at 600 °C due to densification and then decreased after annealing at 900 °C due to interfacial layer growth. The effective dielectric constant of the La2O3 films deposited using O3 decreased at 900 °C due to interfacial layer growth. The La2O3 films deposited using O3 showed better structural and electrical properties in this study.

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