La2O3 films were deposited using O3 and the structural and electrical properties were investigated and compared with those of La2O3 films deposited using O2. The deposition temperature of the La2O3 films using O3 was slightly reduced compared to that of the La2O3 films generated using O2. After a post-annealing process at 600 and 900 °C, the crystallinity of the La2O3 films using O3 were smaller than that using O2. The leakage current density increased after annealing at 600 °C due to densification and then decreased after annealing at 900 °C due to interfacial layer growth. The effective dielectric constant of the La2O3 films deposited using O3 decreased at 900 °C due to interfacial layer growth. The La2O3 films deposited using O3 showed better structural and electrical properties in this study.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Materials Chemistry