We fabricated a novel metal/ferroelectric/insulator/semiconductor (MFIS) structure using the PbTiO3 film and La2O3 film prepared by metal organic chemical vapor deposition as a ferroelectric and an insulator, respectively. The dielectric constant (k) of the 420 Å La2O3 film was about 28. The leakage current density was about 3 × 10-6 A/cm2 at +5 V. The MFIS using an Al/PbTiO3 (3600 Å)/La2O3 (280 Å)/Si configuration showed clockwise C-V hysteresis. The memory window increased from 0.3 to 2.6 V with increasing bias from 2 to 10 V. In this letter we propose the La2O3 film as an alternative insulator layer in the MFIS structure.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||11 B|
|Publication status||Published - 2001 Nov 15|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)