Characteristics of metal/ferroelectric/insulator/semiconductor using La2O3 thin film as an insulator

Dong Jin Won, Chae Hyun Wang, Doo Jin Choi

Research output: Contribution to journalLetterpeer-review

12 Citations (Scopus)


We fabricated a novel metal/ferroelectric/insulator/semiconductor (MFIS) structure using the PbTiO3 film and La2O3 film prepared by metal organic chemical vapor deposition as a ferroelectric and an insulator, respectively. The dielectric constant (k) of the 420 Å La2O3 film was about 28. The leakage current density was about 3 × 10-6 A/cm2 at +5 V. The MFIS using an Al/PbTiO3 (3600 Å)/La2O3 (280 Å)/Si configuration showed clockwise C-V hysteresis. The memory window increased from 0.3 to 2.6 V with increasing bias from 2 to 10 V. In this letter we propose the La2O3 film as an alternative insulator layer in the MFIS structure.

Original languageEnglish
Pages (from-to)L1235-L1237
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number11 B
Publication statusPublished - 2001 Nov 15

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)


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