Characteristics of organic light emitting diodes with tetrakis(Ethylmethylamino) hafnium treated indium tin oxide

Sunyoung Sohn, Keunhee Park, Donggeun Jung, Hyoungsub Kim, Heeyeop Chae, Hyunmin Kim, Junsin Yi, Mann Ho Cho, Jin Hyo Boo

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The surface of indium tin oxide (ITP) in organic light emitting diodes (PLEDs) was treated using an atomic layer deposition with tetrakis(ethylmethylamino) hafnium (TEMAH) and O2 precursors. The treatment for 5 cycles at room temperature resulted in a significant improvement in the electroluminescent characteristics resulting from the increased hole injection. According to the various characterizations, an ultra-thin HfO x layer without any insulating properties was formed, which modified the electronic band structure of the ITP anode. When the number of cycles or temperature was increased, an electrically insulating HfOx was formed, and the resulting PLED properties deteriorated.

Original languageEnglish
Pages (from-to)L461-L464
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number17-19
DOIs
Publication statusPublished - 2007 May 11

Fingerprint

Hafnium
hafnium
Organic light emitting diodes (OLED)
Tin oxides
indium oxides
Indium
tin oxides
light emitting diodes
cycles
Atomic layer deposition
atomic layer epitaxy
Band structure
Anodes
anodes
injection
Temperature
room temperature
electronics
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Sohn, Sunyoung ; Park, Keunhee ; Jung, Donggeun ; Kim, Hyoungsub ; Chae, Heeyeop ; Kim, Hyunmin ; Yi, Junsin ; Cho, Mann Ho ; Boo, Jin Hyo. / Characteristics of organic light emitting diodes with tetrakis(Ethylmethylamino) hafnium treated indium tin oxide. In: Japanese Journal of Applied Physics, Part 2: Letters. 2007 ; Vol. 46, No. 17-19. pp. L461-L464.
@article{afc03c14a4ac4834bc3de2c6636a5d3a,
title = "Characteristics of organic light emitting diodes with tetrakis(Ethylmethylamino) hafnium treated indium tin oxide",
abstract = "The surface of indium tin oxide (ITP) in organic light emitting diodes (PLEDs) was treated using an atomic layer deposition with tetrakis(ethylmethylamino) hafnium (TEMAH) and O2 precursors. The treatment for 5 cycles at room temperature resulted in a significant improvement in the electroluminescent characteristics resulting from the increased hole injection. According to the various characterizations, an ultra-thin HfO x layer without any insulating properties was formed, which modified the electronic band structure of the ITP anode. When the number of cycles or temperature was increased, an electrically insulating HfOx was formed, and the resulting PLED properties deteriorated.",
author = "Sunyoung Sohn and Keunhee Park and Donggeun Jung and Hyoungsub Kim and Heeyeop Chae and Hyunmin Kim and Junsin Yi and Cho, {Mann Ho} and Boo, {Jin Hyo}",
year = "2007",
month = "5",
day = "11",
doi = "10.1143/JJAP.46.L461",
language = "English",
volume = "46",
pages = "L461--L464",
journal = "Japanese Journal of Applied Physics, Part 2: Letters",
issn = "0021-4922",
number = "17-19",

}

Characteristics of organic light emitting diodes with tetrakis(Ethylmethylamino) hafnium treated indium tin oxide. / Sohn, Sunyoung; Park, Keunhee; Jung, Donggeun; Kim, Hyoungsub; Chae, Heeyeop; Kim, Hyunmin; Yi, Junsin; Cho, Mann Ho; Boo, Jin Hyo.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 46, No. 17-19, 11.05.2007, p. L461-L464.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Characteristics of organic light emitting diodes with tetrakis(Ethylmethylamino) hafnium treated indium tin oxide

AU - Sohn, Sunyoung

AU - Park, Keunhee

AU - Jung, Donggeun

AU - Kim, Hyoungsub

AU - Chae, Heeyeop

AU - Kim, Hyunmin

AU - Yi, Junsin

AU - Cho, Mann Ho

AU - Boo, Jin Hyo

PY - 2007/5/11

Y1 - 2007/5/11

N2 - The surface of indium tin oxide (ITP) in organic light emitting diodes (PLEDs) was treated using an atomic layer deposition with tetrakis(ethylmethylamino) hafnium (TEMAH) and O2 precursors. The treatment for 5 cycles at room temperature resulted in a significant improvement in the electroluminescent characteristics resulting from the increased hole injection. According to the various characterizations, an ultra-thin HfO x layer without any insulating properties was formed, which modified the electronic band structure of the ITP anode. When the number of cycles or temperature was increased, an electrically insulating HfOx was formed, and the resulting PLED properties deteriorated.

AB - The surface of indium tin oxide (ITP) in organic light emitting diodes (PLEDs) was treated using an atomic layer deposition with tetrakis(ethylmethylamino) hafnium (TEMAH) and O2 precursors. The treatment for 5 cycles at room temperature resulted in a significant improvement in the electroluminescent characteristics resulting from the increased hole injection. According to the various characterizations, an ultra-thin HfO x layer without any insulating properties was formed, which modified the electronic band structure of the ITP anode. When the number of cycles or temperature was increased, an electrically insulating HfOx was formed, and the resulting PLED properties deteriorated.

UR - http://www.scopus.com/inward/record.url?scp=34547880020&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547880020&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.L461

DO - 10.1143/JJAP.46.L461

M3 - Article

AN - SCOPUS:34547880020

VL - 46

SP - L461-L464

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

SN - 0021-4922

IS - 17-19

ER -