Characteristics of organic light emitting diodes with tetrakis(Ethylmethylamino) hafnium treated indium tin oxide

Sunyoung Sohn; Keunhee Park; Donggeun Jung; Hyoungsub Kim; Heeyeop Chae; Hyunmin Kim; Junsin Yi; Mann Ho Cho; Jin Hyo Boo

doi:10.1143/JJAP.46.L461

Characteristics of organic light emitting diodes with tetrakis(Ethylmethylamino) hafnium treated indium tin oxide

Sunyoung Sohn, Keunhee Park, Donggeun Jung, Hyoungsub Kim, Heeyeop Chae, Hyunmin Kim, Junsin Yi, Mann Ho Cho, Jin Hyo Boo

Department of Physics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The surface of indium tin oxide (ITP) in organic light emitting diodes (PLEDs) was treated using an atomic layer deposition with tetrakis(ethylmethylamino) hafnium (TEMAH) and O₂ precursors. The treatment for 5 cycles at room temperature resulted in a significant improvement in the electroluminescent characteristics resulting from the increased hole injection. According to the various characterizations, an ultra-thin HfO _x layer without any insulating properties was formed, which modified the electronic band structure of the ITP anode. When the number of cycles or temperature was increased, an electrically insulating HfO_x was formed, and the resulting PLED properties deteriorated.

Original language	English
Pages (from-to)	L461-L464
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	46
Issue number	17-19
DOIs	https://doi.org/10.1143/JJAP.46.L461
Publication status	Published - 2007 May 11

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

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title = "Characteristics of organic light emitting diodes with tetrakis(Ethylmethylamino) hafnium treated indium tin oxide",

abstract = "The surface of indium tin oxide (ITP) in organic light emitting diodes (PLEDs) was treated using an atomic layer deposition with tetrakis(ethylmethylamino) hafnium (TEMAH) and O2 precursors. The treatment for 5 cycles at room temperature resulted in a significant improvement in the electroluminescent characteristics resulting from the increased hole injection. According to the various characterizations, an ultra-thin HfO x layer without any insulating properties was formed, which modified the electronic band structure of the ITP anode. When the number of cycles or temperature was increased, an electrically insulating HfOx was formed, and the resulting PLED properties deteriorated.",

author = "Sunyoung Sohn and Keunhee Park and Donggeun Jung and Hyoungsub Kim and Heeyeop Chae and Hyunmin Kim and Junsin Yi and Cho, {Mann Ho} and Boo, {Jin Hyo}",

year = "2007",

month = may,

day = "11",

doi = "10.1143/JJAP.46.L461",

language = "English",

volume = "46",

pages = "L461--L464",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

number = "17-19",

}

Characteristics of organic light emitting diodes with tetrakis(Ethylmethylamino) hafnium treated indium tin oxide. / Sohn, Sunyoung; Park, Keunhee; Jung, Donggeun; Kim, Hyoungsub; Chae, Heeyeop; Kim, Hyunmin; Yi, Junsin; Cho, Mann Ho; Boo, Jin Hyo.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 46, No. 17-19, 11.05.2007, p. L461-L464.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Characteristics of organic light emitting diodes with tetrakis(Ethylmethylamino) hafnium treated indium tin oxide

AU - Sohn, Sunyoung

AU - Park, Keunhee

AU - Jung, Donggeun

AU - Kim, Hyoungsub

AU - Chae, Heeyeop

AU - Kim, Hyunmin

AU - Yi, Junsin

AU - Cho, Mann Ho

AU - Boo, Jin Hyo

PY - 2007/5/11

Y1 - 2007/5/11

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AB - The surface of indium tin oxide (ITP) in organic light emitting diodes (PLEDs) was treated using an atomic layer deposition with tetrakis(ethylmethylamino) hafnium (TEMAH) and O2 precursors. The treatment for 5 cycles at room temperature resulted in a significant improvement in the electroluminescent characteristics resulting from the increased hole injection. According to the various characterizations, an ultra-thin HfO x layer without any insulating properties was formed, which modified the electronic band structure of the ITP anode. When the number of cycles or temperature was increased, an electrically insulating HfOx was formed, and the resulting PLED properties deteriorated.

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