TY - JOUR
T1 - Characteristics of organic light emitting diodes with tetrakis(Ethylmethylamino) hafnium treated indium tin oxide
AU - Sohn, Sunyoung
AU - Park, Keunhee
AU - Jung, Donggeun
AU - Kim, Hyoungsub
AU - Chae, Heeyeop
AU - Kim, Hyunmin
AU - Yi, Junsin
AU - Cho, Mann Ho
AU - Boo, Jin Hyo
PY - 2007/5/11
Y1 - 2007/5/11
N2 - The surface of indium tin oxide (ITP) in organic light emitting diodes (PLEDs) was treated using an atomic layer deposition with tetrakis(ethylmethylamino) hafnium (TEMAH) and O2 precursors. The treatment for 5 cycles at room temperature resulted in a significant improvement in the electroluminescent characteristics resulting from the increased hole injection. According to the various characterizations, an ultra-thin HfO x layer without any insulating properties was formed, which modified the electronic band structure of the ITP anode. When the number of cycles or temperature was increased, an electrically insulating HfOx was formed, and the resulting PLED properties deteriorated.
AB - The surface of indium tin oxide (ITP) in organic light emitting diodes (PLEDs) was treated using an atomic layer deposition with tetrakis(ethylmethylamino) hafnium (TEMAH) and O2 precursors. The treatment for 5 cycles at room temperature resulted in a significant improvement in the electroluminescent characteristics resulting from the increased hole injection. According to the various characterizations, an ultra-thin HfO x layer without any insulating properties was formed, which modified the electronic band structure of the ITP anode. When the number of cycles or temperature was increased, an electrically insulating HfOx was formed, and the resulting PLED properties deteriorated.
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U2 - 10.1143/JJAP.46.L461
DO - 10.1143/JJAP.46.L461
M3 - Article
AN - SCOPUS:34547880020
VL - 46
SP - L461-L464
JO - Japanese Journal of Applied Physics, Part 2: Letters
JF - Japanese Journal of Applied Physics, Part 2: Letters
SN - 0021-4922
IS - 17-19
ER -