Characteristics of PECVD grown tungsten nitride films as diffusion barrier layers for ULSI DRAM applications

Byung Lyul Park, Dae Hong Ko, Young Sun Kim, Jung Min Ha, Young Wook Park, Sang In Lee, Hyeon Deok Lee, Myoung Bum Lee, U. In Chung, Young Bum Koh, Moon Yong Lee

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Abstract

We have developed tungsten nitride (W-Nitride) films grown by plasma enhanced chemical vapor deposition (PECVD) for barrier material applications in ultra large scale integration DRAM devices. As-deposited W-Nitride films show an amorphous structure, which transforms into crystalline, β-W2N and α-W phases upon annealing at 800°C. The resistivity of the as-deposited films grown at the NH3/WF6 gas flow ratio of 1 is about 160 μΩ-cm, which decreases to 50 μΩ-cm after an rapid thermal annealing treatment at 800°C. In the contact holes with the size of 0.35 μm and aspect ratio of 3.5, the bottom step coverage of the tungsten nitride films is about 60%, which is about three times higher than that of collimated-TiN films. We obtained contact resistance and leakage current with the tungsten nitride barrier layer comparable to those with conventional collimated TiN films. The contact resistance and leakage current are stable upon thermal stressing at 450°C up to 48 h.

Original languageEnglish
Pages (from-to)L1-L5
JournalJournal of Electronic Materials
Volume26
Issue number6
Publication statusPublished - 1997 Jun 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Park, B. L., Ko, D. H., Kim, Y. S., Ha, J. M., Park, Y. W., Lee, S. I., Lee, H. D., Lee, M. B., Chung, U. I., Koh, Y. B., & Lee, M. Y. (1997). Characteristics of PECVD grown tungsten nitride films as diffusion barrier layers for ULSI DRAM applications. Journal of Electronic Materials, 26(6), L1-L5.