Characteristics of PECVD grown tungsten nitride films as diffusion barrier layers for ULSI DRAM applications

Byung Lyul Park, Dae Hong Ko, Young Sun Kim, Jung Min Ha, Young Wook Park, Sang In Lee, Hyeon Deok Lee, Myoung Bum Lee, U. In Chung, Young Bum Koh, Moon Yong Lee

Research output: Contribution to journalArticle

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Abstract

We have developed tungsten nitride (W-Nitride) films grown by plasma enhanced chemical vapor deposition (PECVD) for barrier material applications in ultra large scale integration DRAM devices. As-deposited W-Nitride films show an amorphous structure, which transforms into crystalline, β-W2N and α-W phases upon annealing at 800°C. The resistivity of the as-deposited films grown at the NH3/WF6 gas flow ratio of 1 is about 160 μΩ-cm, which decreases to 50 μΩ-cm after an rapid thermal annealing treatment at 800°C. In the contact holes with the size of 0.35 μm and aspect ratio of 3.5, the bottom step coverage of the tungsten nitride films is about 60%, which is about three times higher than that of collimated-TiN films. We obtained contact resistance and leakage current with the tungsten nitride barrier layer comparable to those with conventional collimated TiN films. The contact resistance and leakage current are stable upon thermal stressing at 450°C up to 48 h.

Original languageEnglish
JournalJournal of Electronic Materials
Volume26
Issue number6
Publication statusPublished - 1997 Jun 1

Fingerprint

Tungsten
Diffusion barriers
Dynamic random access storage
barrier layers
Plasma enhanced chemical vapor deposition
Nitrides
nitrides
tungsten
vapor deposition
Contact resistance
contact resistance
Leakage currents
leakage
ULSI circuits
annealing
large scale integration
Rapid thermal annealing
gas flow
Flow of gases
aspect ratio

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Park, Byung Lyul ; Ko, Dae Hong ; Kim, Young Sun ; Ha, Jung Min ; Park, Young Wook ; Lee, Sang In ; Lee, Hyeon Deok ; Lee, Myoung Bum ; Chung, U. In ; Koh, Young Bum ; Lee, Moon Yong. / Characteristics of PECVD grown tungsten nitride films as diffusion barrier layers for ULSI DRAM applications. In: Journal of Electronic Materials. 1997 ; Vol. 26, No. 6.
@article{6372e56f07e34e758a017f67a43393e0,
title = "Characteristics of PECVD grown tungsten nitride films as diffusion barrier layers for ULSI DRAM applications",
abstract = "We have developed tungsten nitride (W-Nitride) films grown by plasma enhanced chemical vapor deposition (PECVD) for barrier material applications in ultra large scale integration DRAM devices. As-deposited W-Nitride films show an amorphous structure, which transforms into crystalline, β-W2N and α-W phases upon annealing at 800°C. The resistivity of the as-deposited films grown at the NH3/WF6 gas flow ratio of 1 is about 160 μΩ-cm, which decreases to 50 μΩ-cm after an rapid thermal annealing treatment at 800°C. In the contact holes with the size of 0.35 μm and aspect ratio of 3.5, the bottom step coverage of the tungsten nitride films is about 60{\%}, which is about three times higher than that of collimated-TiN films. We obtained contact resistance and leakage current with the tungsten nitride barrier layer comparable to those with conventional collimated TiN films. The contact resistance and leakage current are stable upon thermal stressing at 450°C up to 48 h.",
author = "Park, {Byung Lyul} and Ko, {Dae Hong} and Kim, {Young Sun} and Ha, {Jung Min} and Park, {Young Wook} and Lee, {Sang In} and Lee, {Hyeon Deok} and Lee, {Myoung Bum} and Chung, {U. In} and Koh, {Young Bum} and Lee, {Moon Yong}",
year = "1997",
month = "6",
day = "1",
language = "English",
volume = "26",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "6",

}

Park, BL, Ko, DH, Kim, YS, Ha, JM, Park, YW, Lee, SI, Lee, HD, Lee, MB, Chung, UI, Koh, YB & Lee, MY 1997, 'Characteristics of PECVD grown tungsten nitride films as diffusion barrier layers for ULSI DRAM applications', Journal of Electronic Materials, vol. 26, no. 6.

Characteristics of PECVD grown tungsten nitride films as diffusion barrier layers for ULSI DRAM applications. / Park, Byung Lyul; Ko, Dae Hong; Kim, Young Sun; Ha, Jung Min; Park, Young Wook; Lee, Sang In; Lee, Hyeon Deok; Lee, Myoung Bum; Chung, U. In; Koh, Young Bum; Lee, Moon Yong.

In: Journal of Electronic Materials, Vol. 26, No. 6, 01.06.1997.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Characteristics of PECVD grown tungsten nitride films as diffusion barrier layers for ULSI DRAM applications

AU - Park, Byung Lyul

AU - Ko, Dae Hong

AU - Kim, Young Sun

AU - Ha, Jung Min

AU - Park, Young Wook

AU - Lee, Sang In

AU - Lee, Hyeon Deok

AU - Lee, Myoung Bum

AU - Chung, U. In

AU - Koh, Young Bum

AU - Lee, Moon Yong

PY - 1997/6/1

Y1 - 1997/6/1

N2 - We have developed tungsten nitride (W-Nitride) films grown by plasma enhanced chemical vapor deposition (PECVD) for barrier material applications in ultra large scale integration DRAM devices. As-deposited W-Nitride films show an amorphous structure, which transforms into crystalline, β-W2N and α-W phases upon annealing at 800°C. The resistivity of the as-deposited films grown at the NH3/WF6 gas flow ratio of 1 is about 160 μΩ-cm, which decreases to 50 μΩ-cm after an rapid thermal annealing treatment at 800°C. In the contact holes with the size of 0.35 μm and aspect ratio of 3.5, the bottom step coverage of the tungsten nitride films is about 60%, which is about three times higher than that of collimated-TiN films. We obtained contact resistance and leakage current with the tungsten nitride barrier layer comparable to those with conventional collimated TiN films. The contact resistance and leakage current are stable upon thermal stressing at 450°C up to 48 h.

AB - We have developed tungsten nitride (W-Nitride) films grown by plasma enhanced chemical vapor deposition (PECVD) for barrier material applications in ultra large scale integration DRAM devices. As-deposited W-Nitride films show an amorphous structure, which transforms into crystalline, β-W2N and α-W phases upon annealing at 800°C. The resistivity of the as-deposited films grown at the NH3/WF6 gas flow ratio of 1 is about 160 μΩ-cm, which decreases to 50 μΩ-cm after an rapid thermal annealing treatment at 800°C. In the contact holes with the size of 0.35 μm and aspect ratio of 3.5, the bottom step coverage of the tungsten nitride films is about 60%, which is about three times higher than that of collimated-TiN films. We obtained contact resistance and leakage current with the tungsten nitride barrier layer comparable to those with conventional collimated TiN films. The contact resistance and leakage current are stable upon thermal stressing at 450°C up to 48 h.

UR - http://www.scopus.com/inward/record.url?scp=0042646858&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042646858&partnerID=8YFLogxK

M3 - Article

VL - 26

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 6

ER -