Characteristics of perylene-based organic thin-film transistor with octadecyltrichlorosilane monolayer

D. S. Park, S. J. Kang, H. J. Kim, M. H. Jang, M. Noh, Kyung-hwa Yoo, C. N. Whang, Y. S. Lee, M. H. Lee

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We fabricated perylene-based organic thin-film transistor (OTFT) with an octadecyltrichlorosilane (OTS) monolayer in an ultrahigh vacuum condition. By current-voltage characteristics, the saturation current and the field effect mobility of OTS-OTFT (goldperyleneOTSSi O2 p+ -Si) increased over ∼100 times in comparison with normal-OTFT (goldperyleneSi O2 p+ -Si), and on/off ratio increased over ∼100 times. The saturation current, field effect mobility, and on/off ratio were >1 μA, 0.042 cm2 V s, and > 106, respectively. The uniformity of the OTS layer was confirmed by x-ray reflectivity. Perylene thin films on Si O2 and OTSSi O2 were compared by atomic force microscopy, scanning electron microscopy, x-ray diffraction, and x-ray photoscopy.

Original languageEnglish
Pages (from-to)926-929
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number3
DOIs
Publication statusPublished - 2005 Dec 1

Fingerprint

Thin film transistors
Monolayers
transistors
X rays
thin films
Ultrahigh vacuum
Current voltage characteristics
saturation
Atomic force microscopy
Diffraction
ultrahigh vacuum
Thin films
Scanning electron microscopy
x ray diffraction
x rays
atomic force microscopy
reflectance
scanning electron microscopy
electric potential

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Park, D. S. ; Kang, S. J. ; Kim, H. J. ; Jang, M. H. ; Noh, M. ; Yoo, Kyung-hwa ; Whang, C. N. ; Lee, Y. S. ; Lee, M. H. / Characteristics of perylene-based organic thin-film transistor with octadecyltrichlorosilane monolayer. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2005 ; Vol. 23, No. 3. pp. 926-929.
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Characteristics of perylene-based organic thin-film transistor with octadecyltrichlorosilane monolayer. / Park, D. S.; Kang, S. J.; Kim, H. J.; Jang, M. H.; Noh, M.; Yoo, Kyung-hwa; Whang, C. N.; Lee, Y. S.; Lee, M. H.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 3, 01.12.2005, p. 926-929.

Research output: Contribution to journalArticle

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T1 - Characteristics of perylene-based organic thin-film transistor with octadecyltrichlorosilane monolayer

AU - Park, D. S.

AU - Kang, S. J.

AU - Kim, H. J.

AU - Jang, M. H.

AU - Noh, M.

AU - Yoo, Kyung-hwa

AU - Whang, C. N.

AU - Lee, Y. S.

AU - Lee, M. H.

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N2 - We fabricated perylene-based organic thin-film transistor (OTFT) with an octadecyltrichlorosilane (OTS) monolayer in an ultrahigh vacuum condition. By current-voltage characteristics, the saturation current and the field effect mobility of OTS-OTFT (goldperyleneOTSSi O2 p+ -Si) increased over ∼100 times in comparison with normal-OTFT (goldperyleneSi O2 p+ -Si), and on/off ratio increased over ∼100 times. The saturation current, field effect mobility, and on/off ratio were >1 μA, 0.042 cm2 V s, and > 106, respectively. The uniformity of the OTS layer was confirmed by x-ray reflectivity. Perylene thin films on Si O2 and OTSSi O2 were compared by atomic force microscopy, scanning electron microscopy, x-ray diffraction, and x-ray photoscopy.

AB - We fabricated perylene-based organic thin-film transistor (OTFT) with an octadecyltrichlorosilane (OTS) monolayer in an ultrahigh vacuum condition. By current-voltage characteristics, the saturation current and the field effect mobility of OTS-OTFT (goldperyleneOTSSi O2 p+ -Si) increased over ∼100 times in comparison with normal-OTFT (goldperyleneSi O2 p+ -Si), and on/off ratio increased over ∼100 times. The saturation current, field effect mobility, and on/off ratio were >1 μA, 0.042 cm2 V s, and > 106, respectively. The uniformity of the OTS layer was confirmed by x-ray reflectivity. Perylene thin films on Si O2 and OTSSi O2 were compared by atomic force microscopy, scanning electron microscopy, x-ray diffraction, and x-ray photoscopy.

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