Characteristics of phase transition and separation in a In-Ge-Sb-Te system

Sung Jin Park, Moon Hyung Jang, Seung Jong Park, Mann-Ho Cho, Dae Hong Ko

Research output: Contribution to journalArticle

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Abstract

In-doped GeSbTe films were deposited by ion beam sputtering deposition (IBSD) using Ge 2 Sb 2 Te 5 (GST) and In 3 Sb 1 Te 2 (IST) as targets. The phase change characteristics of the resulting films were then investigated by electrical measurements, including static testing, in situ 4-point R s measurements, X-ray diffraction (XRD), transmission electron microscopy (TEM) and Raman spectroscopy. The threshold voltage of the films increased, with increasing levels of IST. This phenomenon is consistent with the increased crystallization temperature in X-ray data and in situ 4-point R s data. In addition, in In 28 Ge 12 Sb 26 Te 34 , multiple V th values with a stepwise change are observed. The minimum time for the crystallization of InGeSbTe films was shorter than that for GST. X-ray data and Raman data for the crystalline structure show that phase separation to In 2 Te 3 occurred in all of the InGeSbTe samples after annealing at 350°C. Moreover, in the case of InGeSbTe films with high concentrations of In (28 at.%), Sb phase separation was also observed. The observed phases indicate that the origin of the phase separation of InGeSbTe films is from the enthalpy change of formation and differences in Ge-Te, In-Te, Sb-Te, In-Sb and In-In bond energies.

Original languageEnglish
Pages (from-to)9786-9791
Number of pages6
JournalApplied Surface Science
Volume258
Issue number24
DOIs
Publication statusPublished - 2012 Oct 1

Fingerprint

Phase separation
Phase transitions
Crystallization
crystallization
X rays
x rays
Threshold voltage
threshold voltage
electrical measurement
Ion beams
Sputtering
Raman spectroscopy
Enthalpy
sputtering
enthalpy
ion beams
Annealing
Crystalline materials
Transmission electron microscopy
X ray diffraction

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Park, Sung Jin ; Jang, Moon Hyung ; Park, Seung Jong ; Cho, Mann-Ho ; Ko, Dae Hong. / Characteristics of phase transition and separation in a In-Ge-Sb-Te system. In: Applied Surface Science. 2012 ; Vol. 258, No. 24. pp. 9786-9791.
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Characteristics of phase transition and separation in a In-Ge-Sb-Te system. / Park, Sung Jin; Jang, Moon Hyung; Park, Seung Jong; Cho, Mann-Ho; Ko, Dae Hong.

In: Applied Surface Science, Vol. 258, No. 24, 01.10.2012, p. 9786-9791.

Research output: Contribution to journalArticle

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AB - In-doped GeSbTe films were deposited by ion beam sputtering deposition (IBSD) using Ge 2 Sb 2 Te 5 (GST) and In 3 Sb 1 Te 2 (IST) as targets. The phase change characteristics of the resulting films were then investigated by electrical measurements, including static testing, in situ 4-point R s measurements, X-ray diffraction (XRD), transmission electron microscopy (TEM) and Raman spectroscopy. The threshold voltage of the films increased, with increasing levels of IST. This phenomenon is consistent with the increased crystallization temperature in X-ray data and in situ 4-point R s data. In addition, in In 28 Ge 12 Sb 26 Te 34 , multiple V th values with a stepwise change are observed. The minimum time for the crystallization of InGeSbTe films was shorter than that for GST. X-ray data and Raman data for the crystalline structure show that phase separation to In 2 Te 3 occurred in all of the InGeSbTe samples after annealing at 350°C. Moreover, in the case of InGeSbTe films with high concentrations of In (28 at.%), Sb phase separation was also observed. The observed phases indicate that the origin of the phase separation of InGeSbTe films is from the enthalpy change of formation and differences in Ge-Te, In-Te, Sb-Te, In-Sb and In-In bond energies.

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