Characteristics of the NO dielectric film with low pressure chemical vapor deposition in-situ nitridation

K. H. Kim, Dae Hong Ko, S. H. Kang, S. T. Kim, S. J. Shim, E. S. Kim, S. T. Ahn

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We investigated the formation of the thin NO dielectric films by in-situ nitridation of native oxide, and subsequent deposition of silicon nitride in the low pressure chemical vapor deposition systems for the application to the capacitors in high density dynamic random access memory. The native oxide was nitrided at elevated temperatures of 690 or 780°C in the flowing ammonia gas atmosphere, and nitride was deposited by flowing silane gas additionally immediately after the nitridation process. By in-situ nitridation process, we could obtaine 5 and 4.5 nm thick (equivalent oxide thickness) nitride/oxide (NO) dielectric films. These films were characterized to be electrically more reliable than the conventional oxide/nitride/oxide (ONO) films of the same equivalent oxide thickness. The nitrided NO films also showed lower leakage current and higher breakdown voltage than conventional ONO films. We obtained electrically most reliable NO films by loading the wafer at 400°C and nitriding the native oxide at 780°C.

Original languageEnglish
Pages (from-to)1273-1278
Number of pages6
JournalJournal of Electronic Materials
Volume23
Issue number12
DOIs
Publication statusPublished - 1994 Dec 1

Fingerprint

Low pressure chemical vapor deposition
Nitridation
Dielectric films
Nitrides
Oxides
Oxide films
nitrides
low pressure
vapor deposition
oxides
oxide films
Gases
Silanes
Nitriding
Electric breakdown
Silicon nitride
Ammonia
Leakage currents
nitriding
random access memory

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kim, K. H. ; Ko, Dae Hong ; Kang, S. H. ; Kim, S. T. ; Shim, S. J. ; Kim, E. S. ; Ahn, S. T. / Characteristics of the NO dielectric film with low pressure chemical vapor deposition in-situ nitridation. In: Journal of Electronic Materials. 1994 ; Vol. 23, No. 12. pp. 1273-1278.
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abstract = "We investigated the formation of the thin NO dielectric films by in-situ nitridation of native oxide, and subsequent deposition of silicon nitride in the low pressure chemical vapor deposition systems for the application to the capacitors in high density dynamic random access memory. The native oxide was nitrided at elevated temperatures of 690 or 780°C in the flowing ammonia gas atmosphere, and nitride was deposited by flowing silane gas additionally immediately after the nitridation process. By in-situ nitridation process, we could obtaine 5 and 4.5 nm thick (equivalent oxide thickness) nitride/oxide (NO) dielectric films. These films were characterized to be electrically more reliable than the conventional oxide/nitride/oxide (ONO) films of the same equivalent oxide thickness. The nitrided NO films also showed lower leakage current and higher breakdown voltage than conventional ONO films. We obtained electrically most reliable NO films by loading the wafer at 400°C and nitriding the native oxide at 780°C.",
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Characteristics of the NO dielectric film with low pressure chemical vapor deposition in-situ nitridation. / Kim, K. H.; Ko, Dae Hong; Kang, S. H.; Kim, S. T.; Shim, S. J.; Kim, E. S.; Ahn, S. T.

In: Journal of Electronic Materials, Vol. 23, No. 12, 01.12.1994, p. 1273-1278.

Research output: Contribution to journalArticle

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AU - Kim, K. H.

AU - Ko, Dae Hong

AU - Kang, S. H.

AU - Kim, S. T.

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AU - Kim, E. S.

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N2 - We investigated the formation of the thin NO dielectric films by in-situ nitridation of native oxide, and subsequent deposition of silicon nitride in the low pressure chemical vapor deposition systems for the application to the capacitors in high density dynamic random access memory. The native oxide was nitrided at elevated temperatures of 690 or 780°C in the flowing ammonia gas atmosphere, and nitride was deposited by flowing silane gas additionally immediately after the nitridation process. By in-situ nitridation process, we could obtaine 5 and 4.5 nm thick (equivalent oxide thickness) nitride/oxide (NO) dielectric films. These films were characterized to be electrically more reliable than the conventional oxide/nitride/oxide (ONO) films of the same equivalent oxide thickness. The nitrided NO films also showed lower leakage current and higher breakdown voltage than conventional ONO films. We obtained electrically most reliable NO films by loading the wafer at 400°C and nitriding the native oxide at 780°C.

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