Characteristics of ultrathin SiO2 films using dry rapid thermal oxidation and Pt catalyzed wet oxidation

M. H. Cho, J. S. Shin, Y. S. Roh, I. W. Lyo, K. Jeong, C. N. Whang, J. S. Lee, J. Y. Yoo, N. I. Lee, K. Fujihara, Dae Won Moon

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Abstract

The defects in the gate oxide were directly characterized by MEIS and HRXPS measurements. Furthermore, it was observed that there is a clear difference between STM images of dry and wet oxidized samples in the defect generation rate and TDDB. These results strongly suggest that the wet oxide using H2O formed by catalysis of Pt has a smoother interfacial roughness and fewer defects than the dry oxide.

Original languageEnglish
Pages (from-to)1004-1008
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume21
Issue number4
DOIs
Publication statusPublished - 2003 Jul 1

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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