Characteristics of vertical type organic light emitting transistor using IF-dione-F as an active layer and DMDCNQI as a n type buffer layer

Tae Yeon Lee, Jong Wook Park, Jeong Ho Cho, Se Young Oh

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

High on-off ratio, low turn-on voltage and fast response time are most critical issues in the research and development of organic transistor. In the present work, we have fabricated vertical type organic transistor using 2,8-difluoro-indeno[1,2-b]fluorine-6,12-dione (IF-dione-F) as an organic active semiconductor and DMDCNQI as a n type buffer material. IF-dione-F shows n-type semiconductor property and relatively high electron mobility. The organic light emitting transistor (OLET) configuration is ITO (drain)/PEDOT:PSS/MEH-PPV/IF- dione-F/Metal (gate)/IF-dione-F/DMDCNQI/Metal (source). The characteristics of OLET were investigated from the measurements of current-radiance voltage characteristics, electron mobility and external quantum efficiency.

Original languageEnglish
Pages (from-to)87-93
Number of pages7
JournalMolecular Crystals and Liquid Crystals
Volume566
Issue number1
DOIs
Publication statusPublished - 2012 Nov 1

Fingerprint

Dione
Buffer layers
Transistors
transistors
buffers
Electron mobility
electron mobility
Metals
Semiconductor materials
Fluorine
Electric potential
Quantum efficiency
n-type semiconductors
electric potential
Buffers
research and development
ITO (semiconductors)
radiance
metals
fluorine

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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abstract = "High on-off ratio, low turn-on voltage and fast response time are most critical issues in the research and development of organic transistor. In the present work, we have fabricated vertical type organic transistor using 2,8-difluoro-indeno[1,2-b]fluorine-6,12-dione (IF-dione-F) as an organic active semiconductor and DMDCNQI as a n type buffer material. IF-dione-F shows n-type semiconductor property and relatively high electron mobility. The organic light emitting transistor (OLET) configuration is ITO (drain)/PEDOT:PSS/MEH-PPV/IF- dione-F/Metal (gate)/IF-dione-F/DMDCNQI/Metal (source). The characteristics of OLET were investigated from the measurements of current-radiance voltage characteristics, electron mobility and external quantum efficiency.",
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Characteristics of vertical type organic light emitting transistor using IF-dione-F as an active layer and DMDCNQI as a n type buffer layer. / Lee, Tae Yeon; Park, Jong Wook; Cho, Jeong Ho; Oh, Se Young.

In: Molecular Crystals and Liquid Crystals, Vol. 566, No. 1, 01.11.2012, p. 87-93.

Research output: Contribution to journalArticle

TY - JOUR

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AB - High on-off ratio, low turn-on voltage and fast response time are most critical issues in the research and development of organic transistor. In the present work, we have fabricated vertical type organic transistor using 2,8-difluoro-indeno[1,2-b]fluorine-6,12-dione (IF-dione-F) as an organic active semiconductor and DMDCNQI as a n type buffer material. IF-dione-F shows n-type semiconductor property and relatively high electron mobility. The organic light emitting transistor (OLET) configuration is ITO (drain)/PEDOT:PSS/MEH-PPV/IF- dione-F/Metal (gate)/IF-dione-F/DMDCNQI/Metal (source). The characteristics of OLET were investigated from the measurements of current-radiance voltage characteristics, electron mobility and external quantum efficiency.

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